Wafer chucking system for advanced plasma ion energy processing systems
US-9435029-B2 · Sep 6, 2016 · US
US11404246B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11404246-B2 |
| Application number | US-202017099729-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2020 |
| Priority date | Nov 15, 2019 |
| Publication date | Aug 2, 2022 |
| Grant date | Aug 2, 2022 |
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Some embodiments include a high voltage pulsing circuit comprising: a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 1 kHz; a bias compensation circuit arranged in parallel with the output the bias compensation circuit comprising; first inductance comprising the inductive elements and any stray inductance between the bias compensation circuit and the high voltage pulsing power supply; and second inductance comprising the inductive elements and any stray inductance between the bias compensation circuit and the output.
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That which is claimed: 1. A high voltage pulsing circuit comprising: a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 1 kHz; and a bias compensation circuit electrically coupled with the transformer and output on one end and ground on the other end, wherein the stray inductance of the bias compensation circuit is less than about 1 μH. 2. The high voltage pulsing circuit according to claim 1 , wherein the bias compensation circuit comprises a bias compensation diode; a DC power supply, and bias compensation capacitor. 3. The high voltage pulsing circuit according to claim 1 , wherein the bias compensation circuit comprises: a first inductance comprising inductive elements and stray inductance between the bias compensation circuit and the high voltage pulsing power supply; and a second inductance comprising inductive elements and stray inductance between the bias compensation circuit and the output. 4. The high voltage pulsing circuit according to claim 3 , wherein the second inductance is less than about 1 μH. 5. The high voltage pulsing circuit according to claim 3 , wherein the first inductance is greater than the second inductance. 6. The high voltage pulsing circuit according to claim 3 , wherein the second inductance is less than 20% of the first inductance. 7. The high voltage pulsing circuit according to claim 1 , wherein the bias compensation circuit further comprises: a bias compensation diode; a DC power supply and a plurality of switches arranged in parallel with the bias compensation diode. 8. The high voltage pulsing circuit according to claim 7 , wherein the high voltage pulsing power supply produces a plurality of high voltage bursts where each burse includes a plurality of high voltage pulses; and wherein the plurality of switches are open during each burst of the plurality of high voltage bursts and closed between each burst of the plurality of high voltage bursts. 9. A high voltage pulsing circuit comprising: a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 1 kHz; and a bias compensation circuit electrically coupled with the transformer and output on one end and ground on the other end, the bias compensation circuit comprising: a first inductance comprising inductive elements and stray inductance between the bias compensation circuit and the high voltage pulsing power supply; and a second inductance comprising inductive elements and stray inductance between the bias compensation circuit and the output. 10. The high voltage pulsing circuit according to claim 9 , wherein the second inductance is less than about 1 μH. 11. The high voltage pulsing circuit according to claim 9 , wherein the first inductance is greater than the second inductance. 12. The high voltage pulsing circuit according to claim 9 , wherein the second inductance is less than 20% the first inductance. 13. The high voltage pulsing circuit according to claim 9 , wherein the bias compensation circuit further comprises: a bias compensation diode; a DC power supply and a plurality of switches arranged in parallel with the bias compensation diode. 14. The high voltage pulsing circuit according to claim 13 , wherein the high voltage pulsing power supply produces a plurality of high voltage bursts where each burse includes a plurality of high voltage pulses; and wherein the plurality of switches are open during each burst. 15. A high voltage pulsing circuit comprising: a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 1 kHz; and a bias compensation circuit electrically coupled with the transformer and output on one end and ground on the other end, the bias compensation circuit comprising: a stray inductance less than about 1 μH; a bias compensation diode; a DC power supply arranged in series with the bias compensation diode; and an inductor arranged in series with the bias compensation diode and the DC power supply. 16. The high voltage pulsing circuit according to claim 15 , further comprising a bias compensation resistor arranged across the bias compensation diode. 17. The high voltage pulsing circuit according to claim 16 , wherein the bias compensation has a resistance less than about 100 Ω. 18. The high voltage pulsing circuit according to claim 15 , further comprising a first stray inductance between the bias compensation diode and the point between the output and the transformer is less than about 1 μH. 19. The high voltage pulsing circuit according to claim 15 , further comprising a second stray inductance between the bias compensation diode and the capacitor is less than about 1 μH. 20. The high voltage pulsing circuit according to claim 15 , further comprising a first stray inductance between the capacitor and ground is less than about 1 μH. 21. The high voltage pulsing circuit according to claim 15 , wherein the capacitor has a capacitance less than about 1 mF. 22. The high voltage pulsing circuit according to claim 15 , wherein the bias compensation circuit further comprises: a bias compensation diode; a DC power supply and a plurality of switches arranged in parallel with the bias compensation diode. 23. The high voltage pulsing circuit according to claim 22 , wherein the high voltage pulsing power supply produces a plurality of high voltage bursts where each burse includes a plurality of high voltage pulses; and wherein the plurality of switches are open during each burst.
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