Method for selective delamination and transfer of thin film using liquid platform

US11397382B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11397382-B2
Application numberUS-202016736983-A
CountryUS
Kind codeB2
Filing dateJan 8, 2020
Priority dateJun 7, 2019
Publication dateJul 26, 2022
Grant dateJul 26, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a selective transfer method including depositing a thin film on a substrate; patterning the thin film using a laser or a tool to acquire a thin film of a target pattern; masking the thin film of the target pattern; selectively controlling a surface wettability through surface treatment of the masked thin film; delaminating the thin film of the target pattern by dipping a surface of the thin film with a wettability changed in response to a completion of the selective surface treatment into a liquid material and by applying a crack opening force capable of delaminating an interface between the thin film and the substrate; and immersing a target substrate into the liquid material when the thin film of the target pattern is floating in the liquid material and then scoop-up transferring the floating thin film of the target pattern.

First claim

Opening claim text (preview).

What is claimed is: 1. A selective transfer method comprising: depositing a thin film on a substrate; patterning the thin film using a laser, a cutting plotter, or a computerized numerically controlled machining tool to acquire a thin film of a target pattern; masking the thin film of the target pattern; selectively controlling a surface wettability through surface treatment of the masked thin film; delaminating the thin film of the target pattern by dipping into a liquid material a surface of the thin film with the wettability changed in response to completion of the selective surface treatment, and by applying a crack opening force capable of delaminating an interface between the thin film and the substrate, to provide a floating thin film of the target pattern floating in the liquid material; and immersing a target substrate into the liquid material when the thin film of the target pattern is floating in the liquid material and then scoop-up transferring the floating thin film of the target pattern. 2. The method of claim 1 , wherein the masking comprises masking the thin film of the target pattern using a material capable of preventing a surface treatment effect. 3. The method of claim 1 , wherein the selectively controlling of the surface wettability comprises selectively controlling the surface wettability of the thin film by allowing the thin film of the target pattern of which masking is completed in response to surface treatment of a masked sample and not exposed to the surface treatment to maintain an original hydrophobic characteristic and by allowing the thin film of a region excluding a shape of the target pattern exposed to the surface treatment to have a hydrophilic characteristic. 4. The method of claim 1 , wherein the delaminating of the thin film of the target pattern comprises proceeding with delamination in response to applying of a sufficient crack opening force capable of delaminating the interface between the thin film of the target pattern and the substrate by the liquid material in the case of the thin film of the target pattern having a hydrophobic characteristic, and not proceeding with delamination in response to a change in a formation angle of a meniscus line between the liquid material and the surface of the thin film and a decrease in a crack opening force in the case of the thin film of a region excluding a shape of the target pattern having a hydrophilic characteristic. 5. The method of claim 1 , wherein the scoop-up transferring of the floating thin film of the target pattern comprises performing a protection and a transfer using a sacrificial layer of poly-methyl methacrylate (PMMA) based on an instability of a single thin film layer to be floating in the water without a crack in the case of a two-dimensional (2D) material with a desired thickness or less, and removing the sacrificial layer after performing a transfer process. 6. The method of claim 1 , further comprising: acquiring a 2D heterostructure in which special patterns in various shapes are stacked by iteratively performing a selective transfer process. 7. The method of claim 1 , wherein the delaminating of the thin film of the target pattern comprises: iteratively performing a delamination process on a plurality of thin films to be floating on the surface of the water; and assembling the plurality of floating thin films on the surface of the water, and the scoop-up transferring comprises scoop-up transferring the plurality of thin films that floats and then is assembled by immersing the target substrate into the liquid material and then lifting up the target substrate. 8. A selective transfer method comprising: depositing a thin film on a substrate; patterning the thin film using a laser, a cutting plotter, or a computerized numerically controlled machining tool to acquire a thin film of a target pattern; masking a thin film of a region excluding a shape of the target pattern; selectively controlling a surface wettability through surface treatment of the masked thin film; delaminating the thin film of the region excluding the shape of the target pattern by dipping into a liquid material a surface of the thin film with the wettability changed in response to completion of the selective surface treatment and by applying a crack opening force capable of delaminating an interface between the thin film and the substrate, to provide a floating thin film of the region excluding the shape of the target pattern floating in the liquid material; and transferring the thin film of the target pattern remaining on the substrate using a difference in an adhesive strength. 9. The method of claim 8 , wherein the masking comprises masking the thin film of the region excluding the shape of the target pattern using a material capable of preventing a surface treatment effect. 10. The method of claim 8 , wherein the selectively controlling of the surface wettability comprises selectively controlling the surface wettability of the thin film by allowing the thin film of the region excluding the shape of the target pattern of which masking is completed in response to surface treatment of a masked sample and not exposed to the surface treatment to maintain an original hydrophobic characteristic and by allowing the thin film of the target pattern exposed to the surface treatment to have a hydrophilic characteristic. 11. The method of claim 8 , wherein the delaminating of the thin film of the region excluding the shape of the target pattern comprises proceeding with delamination in response to applying of a sufficient crack opening force capable of delaminating the interface between the thin film of the region excluding the shape of the target pattern and the substrate by the liquid material in the case of the thin film of the region excluding the shape of the target pattern having a hydrophobic characteristic, and not proceeding with delamination in response to a change in a formation angle of a meniscus line between the liquid material and the surface of the thin film and a decrease in a crack opening force in the case of the thin film of the target pattern having a hydrophilic characteristic. 12. The method of claim 8 , wherein the transferring of the thin film of the target pattern comprises increasing an adhesive strength between the thin film of the target pattern and a target substrate by using a van der Waals force or applying adhesives between the thin film of the target pattern and the target substrate, and transferring the thin film of the target pattern to the target substrate. 13. The method of claim 8 , further comprising: acquiring a two-dimensional (2D) heterostructure in which special patterns in various shapes are stacked by iteratively performing a selective transfer process.

Assignees

Inventors

Classifications

  • characterised by the insulating substrates · CPC title

  • with the use of catalysts · CPC title

  • by lasers · CPC title

  • B32B37/025Primary

    Transfer laminating · CPC title

  • G03F7/2043Primary

    with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists · CPC title

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What does patent US11397382B2 cover?
Provided is a selective transfer method including depositing a thin film on a substrate; patterning the thin film using a laser or a tool to acquire a thin film of a target pattern; masking the thin film of the target pattern; selectively controlling a surface wettability through surface treatment of the masked thin film; delaminating the thin film of the target pattern by dipping a surface of …
Who is the assignee on this patent?
Korea Advanced Inst Sci & Tech
What technology area does this patent fall under?
Primary CPC classification B32B37/025. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jul 26 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).