Negative thermal expansion material, negative thermal expansion film and preparation method thereof

Patent metadata

Field	Value
Publication number	US-11396454-B2
Application number	US-201816332125-A
Country	US
Kind code	B2
Filing date	Jul 17, 2018
Priority date	Aug 30, 2017
Publication date	Jul 26, 2022
Grant date	Jul 26, 2022

Abstract

A negative thermal expansion material and a preparation method thereof, and a negative thermal expansion film and a preparation method thereof are provided. The negative thermal expansion material includes Eu0.85Cu0.15MnO3-δ, wherein 0≤δ≤2.

First claim

What is claimed is:

1. A negative thermal expansion film, comprising a negative thermal expansion material, wherein the negative thermal expansion material comprises Eu 0.85 Cu 0.15 MnO 3-δ , 0≤δ≤2.

2. A zero expansion composite film, comprising the negative thermal expansion film of claim 1 .

3. An integrated circuit board, comprising the negative thermal expansion film of claim 1 .

4. A negative thermal expansion film, comprising a negative thermal expansion material, wherein the negative thermal expansion material comprises Eu 0.85 Cu 0.15 MnO 3-δ , 0≤δ≤2, and the negative thermal expansion material is formed from Eu 2 O 3 , CuO and Mn 2 O 3 powders by using a solid state sintering method.

5. A zero expansion composite film, comprising the negative thermal expansion film of claim 4 .

6. An integrated circuit board, comprising the negative thermal expansion film of claim 4 .

7. A method for preparing a negative thermal expansion film comprising a negative thermal expansion material comprising Eu 0.85 Cu 0.15 MnO 3-δ , 0≤δ≤2, the method comprising:
preparing an Eu 2 O 3 target, a CuO target, and an Mn 2 O 3 target, respectively;
providing a substrate;
placing the Eu 2 O 3 target, the CuO target, the Mn 2 O 3 target and the substrate in a reaction chamber;
depositing Eu 2 O 3 , CuO, and Mn 2 O 3 film on the substrate by bombarding the targets, wherein the molar ratio of Eu, Cu and Mn is controlled to be 0.85:0.15:1; and
maintaining the film deposited at a temperature above 1073K.

8. The method for preparing a negative thermal expansion film according to claim 7 , wherein the targets are bombarded by one of a radio frequency magnetron sputtering method and a pulsed laser method.

9. The method for preparing a negative thermal expansion film according to claim 7 , wherein the molar ratio of Eu, Cu, and Mn is controlled by controlling deposition time of the film.

10. The method for preparing a negative thermal expansion film according to claim 9 , wherein the targets are bombarded by one of a radio frequency magnetron sputtering method and a pulsed laser method.

Assignees

• Ordos Yuansheng Optoelectronics Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Li Wei
• Guo Pan
• Chen Yanqing
• Wang Ning
• Qin Weida
• Xin Haoyi
• Li Yanfeng
• Li Chao
• Wang Yongchao

Classifications

• H10W40/259

  Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• C23C14/08

  Oxides (C23C14/10 takes precedence) · CPC title

• H05K2201/068

  wherein the coefficient of thermal expansion is important · CPC title

• C04B35/6261

  Milling · CPC title

• C23C14/352 Primary

  using more than one target (C23C14/56 takes precedence) · CPC title