Electroacoustic transducer
US-2021400395-A1 · Dec 23, 2021 · US
Micro light-emitting diode device
US11393959B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11393959-B2 |
| Application number | US-201916708443-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 10, 2019 |
| Priority date | Oct 28, 2019 |
| Publication date | Jul 19, 2022 |
| Grant date | Jul 19, 2022 |
How to read this patent
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- Title
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- Abstract
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- Assignees and inventors
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- Key dates
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- First independent claim
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- CPC / IPC classifications
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- Citations and related patents
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Abstract
Official abstract text for this publication.
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is at least disposed on a second portion of the outer side wall and is located in the gap between the first protection layer and the substrate. A height of the second protection layer on the substrate is less than or equal to a height of the micro light-emitting diode on the substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A micro light-emitting diode device, comprising: a substrate; a micro light-emitting diode, disposed on the substrate and including a light-emitting layer; a first protection layer, disposed on a first portion of an outer side wall of the micro light-emitting diode and having a gap from the substrate; and a second protection layer, at least disposed on a second portion of the outer side wall of the micro light-emitting diode and located in the gap between the first protection layer and the substrate, wherein a height of the second protection layer on the substrate is less than or equal to a height of the micro light-emitting diode on the substrate, wherein a projection of the first protection layer on the substrate overlaps a projection of the second protection layer on the substrate, the second protection layer contacts the first protection layer and the substrate, and a Young's modulus of the first protection layer is greater than a Young's modulus of the second protection layer, wherein the first protection layer is electrically insulating and covers the light-emitting layer. 2. The micro light-emitting diode device according to claim 1 , wherein the height of the second protection layer on the substrate is less than or equal to 0.5 time the height of the micro light-emitting diode on the substrate. 3. The micro light-emitting diode device according to claim 1 , wherein a material of the first protection layer is different from a material of the second protection layer. 4. The micro light-emitting diode device according to claim 1 , wherein the height of the second protection layer on the substrate is less than a height of the light-emitting layer on the substrate. 5. The micro light-emitting diode device according to claim 1 , wherein the second protection layer is a lightproof layer. 6. The micro light-emitting diode device according to claim 1 , wherein a roughness of the first portion of the outer side wall of the micro light-emitting diode is less than a roughness of the second portion. 7. The micro light-emitting diode device according to claim 1 , wherein the second protection layer is further disposed on a bottom surface of the micro light-emitting diode and between the micro light-emitting diode and the substrate. 8. The micro light-emitting diode device according to claim 7 , wherein the second protection layer is provided with at least one hole in a portion corresponding to the bottom surface of the micro light-emitting diode, and the at least one hole occupies 10% to 90% of an area of the bottom surface of the micro light-emitting diode. 9. The micro light-emitting diode device according to claim 1 , wherein the projection of the first protection layer on the substrate is less than the projection of the second protection layer on the substrate. 10. The micro light-emitting diode device according to claim 1 , wherein the projection of the first protection layer on the substrate is greater than the projection of the second protection layer on the substrate. 11. The micro light-emitting diode device according to claim 1 , wherein the second protection layer is a conductive layer. 12. The micro light-emitting diode device according to claim 11 , wherein the second protection layer extends to at least a portion of a bottom surface of the micro light-emitting diode.
Assignees
Inventors
Classifications
Optical field-shaping means, e.g. lenses · CPC title
characterised by their material, e.g. epoxy or silicone resins · CPC title
- H10H20/853Primary
characterised by their shape · CPC title
- H01L33/54Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US11393959B2 cover?
- A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is at least disp…
- Who is the assignee on this patent?
- Playnitride Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/853. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 19 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).