Semiconductor device from transferring programs from a ROM to an SRAM

Patent metadata

Field	Value
Publication number	US-11392192-B2
Application number	US-201916575108-A
Country	US
Kind code	B2
Filing date	Sep 18, 2019
Priority date	Oct 24, 2018
Publication date	Jul 19, 2022
Grant date	Jul 19, 2022

Abstract

A semiconductor device capable of reducing electric power consumption while suppressing deterioration in reliability is provided. The semiconductor device includes a flash memory, a SRAM formed on a SOI substrate, oscillation circuits generating a signal of a first frequency and a signal of a second frequency lower than the first frequency, and a processor operating in synchronization with a system clock. The processor performs steps of turning on a power supply of the flash memory, lowering a threshold voltage of the SRAM, transferring a program from the flash memory to the SRAM by using the signal of the first frequency as the system clock, turning off the power supply of the flash memory, heightening the threshold voltage of the SRAM, and executing the program stored in the SRAM by using the signal of the second frequency as the system clock.

First claim

What is claimed is:

1. A semiconductor device comprising:
a ROM storing a first program;
a SRAM coupling to the ROM;
a first oscillation circuit for generating a signal of a first frequency;
a second oscillation circuit for generating a signal of a second frequency; and
a processor operating in synchronization with a system clock signal,
wherein a value of the second frequency is lower than a value of the first frequency, and
wherein the processor performs:
a first step of turning on a power supply of the ROM and lowering a threshold voltage of the SRAM;
a second step of setting the signal of the first frequency as the system clock signal and transferring the first program from the ROM to the SRAM based on the first frequency; and
a third step of turning off the power supply of the ROM, setting the signal of the second frequency as the system clock signal, heightening the threshold voltage of the SRAM, and executing the first program transferred to the SRAM based on the second frequency.

2. The semiconductor device according to claim 1 , further comprising a third oscillation circuit for generating a signal of a third frequency,
wherein the processor performs a fourth step of setting the signal of the third frequency as the system clock signal after the third step.

3. The semiconductor device according to claim 1 ,
wherein the processor repeatedly performs the first to third steps.

4. The semiconductor device according to claim 2 ,
wherein the processor performs a fifth step of setting the signal of the second frequency as the system clock signal, executing the first program transferred to the SRAM based on the second frequency, and setting the signal of the third frequency as the system clock signal.

5. The semiconductor device according to claim 4 ,
wherein the processor performs the fifth step at least once after the first to third steps.

6. The semiconductor device according to claim 5 ,
wherein the processor performs the first to third steps again after the fifth step.

7. The semiconductor device according to claim 4 ,
wherein the first to third steps are repeatedly performed,
wherein the fifth step is repeatedly performed, and
wherein an interval of the repetition of the first to third steps or an interval of the repetition of the fifth step is the same.

8. The semiconductor device according to claim 7 ,
wherein the interval of the repetition of the fifth step is 1 second, and
wherein the interval of the repetition of the first to third steps is longer than 1 second.

9. The semiconductor device according to claim 8 ,
wherein the first program is a program for executing an operation of advancing a hand display of a wristwatch for one second.

10. The semiconductor device according to claim 4 ,
wherein the processor performs a sixth step of selecting the first to third steps or the fifth step.

11. The semiconductor device according to claim 10 ,
wherein the processor selects the first to third steps at all times in the sixth step.

12. The semiconductor device according to claim 10 , further comprising a timer for measuring time,
wherein the processor performs a seventh step of setting the timer to 0 second after the first to third steps,
wherein the processor selects the first to third steps in the sixth step if a time measured by the timer exceeds a predetermined set time, and selects the fifth step in the sixth step if the time does not exceed the predetermined set time.

13. The semiconductor device according to claim 1 ,
wherein a value of the first frequency is 1 MHz or more.

14. The semiconductor device according to claim 2 ,
wherein a value of the third frequency is the same as a value of the second frequency.

15. The semiconductor device according to claim 1 ,
wherein a value of the second frequency is 256 kHz or less.

16. The semiconductor device according to claim 1 ,
wherein the SRAM is formed on a SOI substrate.

17. A semiconductor device comprising:
a SRAM formed on a SOI substrate;
a ROM storing a first program and coupling to the SRAM; and
a processor coupling to the ROM and the RAM,

wherein the processor transfers the first program from the ROM to the SRAM and executes the first program transferred to the SRAM, in synchronization with a system clock signal,
wherein the first program is transferred from the ROM to the SRAM repeatedly, and
wherein a frequency of the system clock signal when the processor executes the first program transferred to the SRAM is lower than a frequency of the system clock signal when the processor transfers the first program from the ROM to the SRAM.

18. The semiconductor device according to claim 17 ,
wherein the repetitive transfers of the first program from the ROM to the SRAM are periodic.

19. The semiconductor device according to claim 18 , further comprising a substrate bias circuit coupling to the SRAM,
wherein a threshold voltage of the SRAM is controlled by the substrate bias circuit such that the threshold voltage of the SRAM when the processor transfers the first program from the ROM to the SRAM is lower than the threshold voltage of the SRAM when the processor executes the first program transferred to the SRAM.

Assignees

• Renesas Electronics Corp

Inventors

• Uejima Kazuya

Classifications

• H10D86/201 Primary

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• G11C16/32

  Timing circuits · CPC title

• G06F1/04

  Generating or distributing clock signals or signals derived directly therefrom · CPC title

• G11C16/30

  Power supply circuits · CPC title

• G11C11/417

  for memory cells of the field-effect type · CPC title