Integrated photodetector with charge storage bin of varied detection time

Patent metadata

Field	Value
Publication number	US-11391626-B2
Application number	US-201916446708-A
Country	US
Kind code	B2
Filing date	Jun 20, 2019
Priority date	Jun 22, 2018
Publication date	Jul 19, 2022
Grant date	Jul 19, 2022

Abstract

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes a charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

First claim

What is claimed is:

1. An integrated circuit, comprising:
a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons; and
a charge carrier storage region,
wherein the integrated circuit is configured to:
(A) aggregate first photogenerated charge carriers in the charge carrier storage region over a plurality of first detection periods following first respective trigger events, the plurality of first detection periods individually having a first timing with respect to the first respective trigger events;
(B) read out a first signal indicative of charge stored in the charge carrier storage region following (A);
(C) aggregate second photogenerated charge carriers in the charge carrier storage region over a plurality of second detection periods following second respective trigger events, the plurality of second detection periods individually having a second timing with respect to the second respective trigger events; and
(D) read out a second signal indicative of charge stored in the charge carrier storage region following (C),
wherein the integrated circuit is configured to repeat at least (A) through (D) a plurality of times, and
wherein the charge carrier storage region is a single charge carrier storage region.

2. The integrated circuit of claim 1 , wherein the plurality of first detection periods have different start times, end times and/or durations than the plurality of second detection periods.

3. The integrated circuit of claim 1 , wherein the integrated circuit is configured to calculate an average value of the first signal and an average value of the second signal based on the first signals and second signals read out from repeating (A) through (D) the plurality of times.

4. The integrated circuit of claim 3 , wherein the integrated circuit is configured to identify at least a portion of a molecule based at least in part on the average value of the first signal and the average value of the second signal.

5. The integrated circuit of claim 1 , wherein the integrated circuit is further configured to:
(E) aggregate third photogenerated charge carriers in the charge carrier storage region over a plurality of third detection periods following respective third trigger events, the plurality of third detection periods individually having a third timing with respect to the respective third trigger events; and
(F) read out a third signal indicative of charge stored in the charge carrier storage region following (E),
wherein the integrated circuit is configured to repeat at least (A) through (F) a plurality of times.

6. The integrated circuit of claim 1 , wherein a pixel comprises the single charge carrier storage region and a second charge carrier storage region that receives charge from the single charge carrier storage region.

7. A photodetection method, comprising:
(A) aggregating first photogenerated charge carriers in a charge carrier storage region over a plurality of first detection periods following first respective trigger events, the plurality of first detection periods individually having a first timing with respect to the first respective trigger events;
(B) reading out a first signal indicative of charge stored in the charge carrier storage region following (A);
(C) aggregating second photogenerated charge carriers in the charge carrier storage region over a plurality of second detection periods following second respective trigger events, the plurality of second detection periods individually having a second timing with respect to the second respective trigger events;
(D) reading out a second signal indicative of charge stored in the charge carrier storage region following (C); and
(E) repeating at least (A) through (D) a plurality of times,
wherein the charge carrier storage region is a single charge carrier storage region.

Assignees

• Quantum Si Inc

Inventors

• Thurston Tom
• Cipriany Benjamin
• Clark Joseph D
• Rearick Todd
• Fife Keith G

Classifications

• G01N21/6408 Primary

  with measurement of decay time, time resolved fluorescence · CPC title

• H04N25/77 Primary

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• G01J1/42

  using electric radiation detectors (optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10) · CPC title

• G01J1/0204

  Compact construction · CPC title