Air-stable surface-passivated perovskite quantum dots (QDS), methods of making these QDS, and methods of using these QDS

Patent metadata

Field	Value
Publication number	US-11390802-B2
Application number	US-202117153618-A
Country	US
Kind code	B2
Filing date	Jan 20, 2021
Priority date	Nov 8, 2015
Publication date	Jul 19, 2022
Grant date	Jul 19, 2022

Abstract

Embodiments of the present disclosure provide for passivated quantum dots, methods of making passivated quantum dots, methods of using passivated quantum dots, and the like.

First claim

What is claimed:

1. A film comprising:
a passivated perovskite quantum dot including:
a core of the form APbX 3 , where A is Cs + , Rb + , CH 3 NH 3 + , or HC(NH 2 ) 2 + , and X is a halogen; and
a capping ligand including an inorganic-organic hybrid ion pair including di-dodecyl dimethylammonium and at least one anion selected from the group of Cl − , Br − , I − , SH − , sulfide (S 2− ), Se 2− , HSe − , Te 2− , HTe − , TeS 3 2− or AsS 3 2− .

2. The film of claim 1 , wherein the inorganic-organic hybrid ion pair includes di-dodecyl dimethylammonium sulfide (S 2− -DDA + ).

3. The film of claim 1 , wherein the core of the passivated perovskite quantum dot is CsPbCl 3-x Br x , where x is 0 to 3.

4. The film of claim 1 , wherein the core of the passivated perovskite quantum dot is CsPbCl 3 .

5. The film of claim 1 , wherein the core of the passivated perovskite quantum dot is CsPbBr 3 .

6. The film of claim 1 , wherein the at least one anion is Cl − , Br − , or I − .

7. The film of claim 1 , wherein the inorganic-organic hybrid ion pair includes di-dodecyl dimethyl ammonium bromide (Br − -DDA + ).

8. The film of claim 1 , wherein the inorganic-organic hybrid ion pair includes di-dodecyl dimethyl ammonium chloride (Cl − -DDA + ).

9. The film of claim 1 , wherein the inorganic-organic hybrid ion pair includes di-dodecyl dimethyl ammonium iodide (I − -DDA + ).

10. The film of claim 1 , wherein a diameter of the passivated perovskite quantum dot ranges from about 75 nanometer (nm) to 160 nm.

11. The film of claim 1 , wherein a diameter of the core of the passivated perovskite quantum dot ranges from about 5 nm to 20 nm.

12. The film of claim 1 , wherein a diameter of the core of the passivated perovskite quantum dot ranges from about 6 nm to 16 nm.

13. The film of claim 1 , wherein a thickness of the capping ligand ranges from about 70 nm to 140 nm.

14. The film of claim 1 , wherein a thickness of the capping ligand ranges from about 90 nm to 120 nm.

15. The film of claim 1 , wherein the passivated perovskite quantum dot has a photoluminescence quantum yield (PLQY) of about 70% or more.

16. An optoelectronic device comprising the film according to claim 1 .

17. The optoelectronic device of claim 16 , wherein the optoelectronic device is a lasing device.

18. The optoelectronic device of claim 16 , wherein the optoelectronic device is a quantum dots light emitting device (QLED).

19. The optoelectronic device of claim 18 , further comprising an electron transport layer and a hole transport layer.

20. The optoelectronic device of claim 16 , wherein the optoelectronic device is a photovoltaic device.

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• Pan Jun
• Sarmah Smritakshi Phukan
• Mohammed Omar F
• Bakr Osman M

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• C09K11/664

  Halogenides (C09K11/661 takes precedence) · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title

• C01G21/006

  Compounds containing lead, with or without oxygen or hydrogen, and containing two or more other elements · CPC title