Method for conditioning polishing pad

Patent metadata

Field	Value
Publication number	US-11389928-B2
Application number	US-201816141680-A
Country	US
Kind code	B2
Filing date	Sep 25, 2018
Priority date	Nov 30, 2017
Publication date	Jul 19, 2022
Grant date	Jul 19, 2022

Abstract

A method is provided and includes: measuring a surface profile of a polishing pad; obtaining a reference profile of the polishing pad; comparing the surface profile of the polishing pad with the reference profile to generate a difference result; determining a conditioning parameter value according to the difference result; and conditioning the polishing pad using the conditioning parameter value.

First claim

What is claimed is:

1. A method, comprising:
measuring a first thickness of a polishing pad at a first location of the polishing pad and a second thickness of the polishing pad at a second location of the polishing pad;
calculating a first thickness difference between the first thickness and a first reference thickness at the first location of the polishing pad;
calculating a second thickness difference between the second thickness and a second reference thickness at the second location of the polishing pad, wherein the second location is other than the first location, such that the first reference thickness is different from the second reference thickness, and wherein the second location is a location where a smallest thickness of the polishing pad occurs after processing at least one wafer using the polishing pad;
calculating a third thickness difference between the first thickness difference and the second thickness difference;
determining at least one conditioning parameter value according to the third thickness difference; and
conditioning the polishing pad using a conditioner based on the at least one determined conditioning parameter value.

2. The method of claim 1 , wherein the at least one conditioning parameter value comprises a value of a downforce to the conditioner that urges the conditioner against the polishing pad.

3. The method of claim 1 , wherein the at least one conditioning parameter value comprises a sweeping speed value of the conditioner across the polishing pad.

4. The method of claim 1 , wherein determining the at least one conditioning parameter value comprises determining whether the third thickness difference is within a pre-determined range.

5. The method of claim 1 , wherein the first reference thickness and the second reference thickness are thicknesses of the polishing pad prior to processing a wafer.

6. The method of claim 1 , wherein the first reference thickness and the second reference thickness are thicknesses of the polishing pad after processing the at least one wafer.

7. The method of claim 1 , further comprising:
performing a chemical mechanical polishing operation using the polishing pad after conditioning the polishing pad.

8. The method of claim 1 , further comprising:
performing a chemical mechanical polishing operation using the polishing pad, wherein the chemical mechanical polishing operation and conditioning the polishing pad are performed at least partially simultaneously.

9. The method of claim 1 , further comprising:
performing a chemical mechanical polishing operation using the polishing pad prior to measuring the first thickness of the polishing pad at the first location of the polishing pad and the second thickness of the polishing pad at the second location of the polishing pad.

10. The method of claim 1 , wherein determining the at least one conditioning parameter value comprises comparing the third thickness difference with a pre-determined value, and conditioning the polishing pad comprises increasing a downforce value of the conditioner in response to the third thickness difference being greater than the pre-determined value.

11. The method of claim 1 , wherein determining the at least one conditioning parameter value comprises comparing the third thickness difference with a pre-determined value, and conditioning the polishing pad comprises decreasing a sweeping speed of the conditioner in response to the third thickness difference being greater than the pre-determined value.

12. The method of claim 1 , wherein when the third thickness difference is greater than a pre-determined value, conditioning the polishing pad comprises increasing a downward force of the conditioner.

13. The method of claim 1 , wherein when the third thickness difference is greater than a pre-determined value, conditioning the polishing pad comprises decreasing a sweeping speed of the conditioner.

14. A method, comprising:
calculating a first thickness tendency at a location (j) of a polishing pad, wherein the first thickness tendency is t cur,j+1 −t cur,j−1 , the t cur,j+1 is a thickness of the polishing pad at a location (j+1), and the t cur,j−1 is a thickness of the polishing pad at a location (j−1);
calculating a second thickness tendency at the location (j+1) of the polishing pad, wherein the second thickness tendency is t cur,j+2 −t cur,j , the t cur,j+2 is a thickness of the polishing pad at a location (j+2), and the t cur,j is a thickness of the polishing pad at a location (j);
determining a first parameter value with respect to the location (j) based on the first thickness tendency and a first reference thickness tendency, wherein the first reference thickness tendency is t cur−k,j+1 −t cur−k,j−1 , the t cur−k,j+1 is a thickness of a reference polishing pad at the location (j+1), and the t cur−k,j−1 is a thickness of the reference polishing pad at the location (j−1);
determining a second parameter value with respect to the location (j+1) based on the second thickness tendency and a second reference thickness tendency, wherein the second reference thickness tendency is t cur−k,j+2 −t cur−k,j , the t cur−k,j+2 is a thickness of the reference polishing pad at the location (j+2), and the t cur−k,j is a thickness of the reference polishing pad at the location (j);
sweeping a conditioner across a surface of the polishing pad;
applying a first downforce to the conditioner that urges the conditioner against the location (j) of the polishing pad according to the first parameter value; and
applying a second downforce to the conditioner that urges the conditioner against the location (j+1) of the polishing pad according to the second parameter value.

15. The method of claim 14 , wherein applying the first downforce comprises varying a value of the first downforce while sweeping the conditioner across the surface of the polishing pad.

16. The method of claim 14 , wherein the first parameter value is different from the second parameter value.

17. The method of claim 14 , wherein when the first thickness tendency is greater than the first reference thickness tendency, determining the first parameter value comprises increasing a downward force value of the conditioner.

18. A method, comprising:
measuring a first thickness of a polishing pad at a first location of the polishing pad and a second thickness of the polishing pad at a second location of the polishing pad;
obtaining a first reference thickness at the first location of the polishing pad and a second reference thickness at the second location of the polishing pad, wherein the second location is other than the first location, such that the first reference thickness is different from the second reference thickness;
calculating a first thickness variation based on the first thickness and the first reference thickness at the first location, and a second thickness variation based on the second reference thickness and the second reference thickness at the second location, wherein the second location is a location where a smallest thickness of the polishing pad occurs after processing at least one wafer using the polishing pad;
calculating a difference between the first thickness variation and the second thickness variation;
contacting a surface of the polishing pad with a conditioner; and
sweeping the conditioner across the surface of the polishing pad at a sweeping speed value based on the difference between the first thickness variation and the second thickness variation.

19. The method of claim 18 , wherein sweeping the conditi

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Shen-Nan
• Hou Te-Chien
• Tsai Teng-Chun
• Hsu Chung-Wei
• Wu Chen-Hao

Classifications

• B24B53/017 Primary

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• B24B37/32

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• B24B49/12

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