Micro light-emitting diode device

Patent metadata

Field	Value
Publication number	US-11387394-B2
Application number	US-201916708445-A
Country	US
Kind code	B2
Filing date	Dec 10, 2019
Priority date	Oct 28, 2019
Publication date	Jul 12, 2022
Grant date	Jul 12, 2022

Abstract

A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.

First claim

What is claimed is:

1. A micro light-emitting diode device, comprising:
a substrate;
a micro light-emitting diode, disposed on the substrate;
a first protection layer, disposed on a first portion of an outer side wall of the micro light-emitting diode and having a gap from the substrate; and
a second protection layer, disposed on a second portion of the outer side wall of the micro light-emitting diode, wherein the second protection layer is in a curved slope shape, the second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer, and a maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall,
wherein a circuit is connected to the micro light-emitting diode, and the circuit is in direct contact with the first protection layer and the second protection layer, extends to the substrate along an outer contour of the shape of first protection layer and an outer contour of the curved slope shape of the second protection layer sequentially and electrically connected with the substrate,
wherein the curved slope shape of the second protection layer in a thickness of the second protection layer on the substrate is gradually increased along a direction away from the first protection layer,
wherein an included angle between the second protection layer and the substrate is an acute angle, and an included angle between the second protection layer and the first protection layer is an acute angle,
wherein the included angle between the second protection layer and the substrate is less than or equal to 45 degrees, and the included angle between the second protection layer and the first protection layer is greater than or equal to 45 degrees.

2. The micro light-emitting diode device according to claim 1 , wherein a ratio of the maximum thickness of the first protection layer on the outer side wall to the maximum thickness of the second protection layer on the outer side wall is less than or equal to 0.2.

3. The micro light-emitting diode device according to claim 1 , wherein a material of the first protection layer is different from a material of the second protection layer.

4. The micro light-emitting diode device according to claim 3 , wherein a Young's modulus of the first protection layer is greater than a Young's modulus of the second protection layer.

5. The micro light-emitting diode device according to claim 1 , wherein a height of the second protection layer on the substrate is less than or equal to 0.5 time a height of the micro light-emitting diode on the substrate.

6. The micro light-emitting diode device according to claim 1 , wherein the micro light-emitting diode comprises a light-emitting layer, and a height of the second protection layer on the substrate is less than a height of the light-emitting layer on the substrate.

7. The micro light-emitting diode device according to claim 1 , wherein a roughness of the first portion of the outer side wall of the micro light-emitting diode is less than a roughness of the second portion.

8. The micro light-emitting diode device according to claim 1 , wherein a height of the second protection layer on the substrate is greater than or equal to a height of the first protection layer on the substrate.

9. The micro light-emitting diode device according to claim 1 , wherein the second protection layer is further disposed on a bottom surface of the micro light-emitting diode and between the micro light-emitting diode and the substrate.

10. The micro light-emitting diode device according to claim 1 , wherein the second protection layer is a lightproof layer, the second protection layer covers at least a portion of the first protection layer, and the first protection layer is a light transmissive layer.

11. The micro light-emitting diode device according to claim 1 , wherein a portion of the circuit in contact with the second protection layer does not have a right-angle corner.

12. The micro light-emitting diode device according to claim 1 , wherein the included angle between the second protection layer and the substrate is less than the included angle between the second protection layer and the first protection layer.

13. A micro light-emitting diode device, comprising:
a substrate;
a micro light-emitting diode, disposed on the substrate;
a first protection layer, disposed on a first portion of an outer side wall of the micro light-emitting diode and having a gap from the substrate; and
a second protection layer, disposed on a second portion of the outer side wall of the micro light-emitting diode, wherein the second protection layer is in a curved slope shape, the second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer, and a maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall,
wherein a circuit is connected to the micro light-emitting diode, and the circuit is in direct contact with the first protection layer and the second protection layer, extends to the substrate along an outer contour of the shape of first protection layer and an outer contour of the curved slope shape of the second protection layer sequentially and electrically connected with the substrate,
wherein a ratio of the maximum thickness of the first protection layer on the outer side wall to the maximum thickness of the second protection layer on the outer side wall is less than or equal to 0.2,
wherein the curved slope shape of the second protection layer in a thickness of the second protection layer on the substrate is gradually increased along a direction away from the first protection layer.

Assignees

• Playnitride Display Co Ltd

Inventors

• Chen Pei-Hsin
• Shih Yi-Chun
• Wu Chih-Ling

Classifications

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/853 Primary

  characterised by their shape · CPC title

• H01L33/44

  Electricity · mapped topic

• H01L33/54 Primary

  Electricity · mapped topic