TMR sensor with magnetic tunnel junctions with shape anisotropy

Patent metadata

Field	Value
Publication number	US-11385306-B2
Application number	US-201916728507-A
Country	US
Kind code	B2
Filing date	Dec 27, 2019
Priority date	Aug 23, 2019
Publication date	Jul 12, 2022
Grant date	Jul 12, 2022

Abstract

Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 Å or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.

First claim

What is claimed is:

1. A tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration, comprising:
at least one magnetic tunnel junctions (MTJ), the at least one MTJ comprising:
a free layer having a first edge and a second edge, the free layer having a thickness of about 100 Å or more and having a width and a height with a width-to-height aspect ratio of about 4:1 or more,
a first hard bias element positioned proximate the first edge of the free layer; and
a second hard bias element positioned proximate the second edge of the free layer.

2. The TMR based magnetic sensor of claim 1 , wherein the width of the free layer is from about 1 μm to about 10 μm and wherein the height of the free layer is about 0.2 μm to about 2 μm.

3. The TMR based magnetic sensor of claim 1 , wherein the free layer is shaped as a strip.

4. The TMR based magnetic sensor of claim 1 , wherein a resistance area product of the at least one MTJ is from about 100 Ohm/μm 2 to about 10,000 Ohm/μm 2 .

5. The TMR based magnetic sensor of claim 1 , wherein the at least one MTJ further comprises:
a barrier layer over the free layer;
a reference layer over the barrier layer;
an anti-parallel coupled layer over the reference layer;
a pinned layer over the anti-parallel coupled layer; and
an antiferromagnetic pinning layer over the pinned layer.

6. The TMR based magnetic sensor of claim 5 , wherein a magnetization direction of the reference layer is rotated by greater than 90° with respect to an easy axis of the free layer.

7. The TMR based magnetic sensor of claim 1 , wherein the at least one MTJ provides a substantially hysteresis-free response to an external magnetic field.

8. The TMR based magnetic sensor of claim 1 , wherein a magnetization moment of the free layer is substantially along the width of the free layer.

9. The TMR based magnetic sensor of claim 8 , wherein a magnetization direction of the first hard bias element and a magnetization direction of the second hard bias element is at angle to the magnetization moment of the free layer.

10. A tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration, comprising:
a plurality of magnetoresistance legs, each magnetoresistance leg comprising a plurality of magnetic tunnel junctions (MTJs) coupled in series, at least one of the plurality of MTJs comprises a free layer formed as a strip with a substantially single magnetic domain provided by shape anisotropy of strip and by a first hard bias element at one end of the strip and a second hard bias element at another end of the strip.

11. The TMR based magnetic sensor of claim 10 , wherein each magnetoresistance leg independently comprises the MTJs numbering from 10 to 100.

12. The TMR based magnetic sensor of claim 10 , wherein a magnetization direction of the first hard bias element and a magnetization direction of the second hard bias element are rotated with respect to the substantially single magnetic domain of the free layer.

13. The TMR based magnetic sensor of claim 10 , wherein the first hard bias element and the second hard bias element are fabricated in a self-aligned process with the free layer.

14. The TMR based magnetic sensor of claim 10 , wherein a total combined length of the at least one of the MTJs, the first hard bias element, and the second hard bias element is from about 1 μm to about 20 μm.

15. The TMR based magnetic sensor of claim 10 , wherein an output of the TMR based magnetic sensor has a linearity ratio of about 1% or less in a range from about ±600 Oe from a zero voltage output.

16. A tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration, comprising:
two positive polarity magnetoresistance legs, each positive polarity magnetoresistance leg comprising a first plurality of magnetic tunnel junctions (MTJs) coupled in series, and
two negative polarity magnetoresistance legs, each negative polarity magnetoresistance leg comprising a second plurality of magnetic tunnel junctions (MTJs) coupled in series,
wherein at least one of the MTJs of the first plurality of MTJs and at least one of MTJs of the second plurality of MTJs each comprises a free layer formed as a strip with a substantially single magnetic domain provided by shape anisotropy of the strip and by a first hard bias element at one end of the strip and a second hard bias element at another end of the strip,
wherein each of the positive polarity magnetoresistance legs and each of the negative polarity magnetoresistance legs provides a substantially hysteresis-free response to an external magnetic field.

17. The TMR based magnetic sensor of claim 16 , wherein an output of the TMR based magnetic sensor has a zero voltage output when the external magnetic field is non-zero.

18. The TMR based magnetic sensor of claim 16 , wherein an output of the TMR based magnetic sensor has a linearity ratio of about 1% or less in a range from about ±600 Oe from a zero voltage output.

19. The TMR based magnetic sensor of claim 16 , wherein the TMR based magnetic sensor occupies a dimension from about 0.1 mm 2 to about 50 mm 2 .

20. The TMR based magnetic sensor of claim 16 , wherein the magnetization direction of the first hard bias element and the magnetization direction of the second hard bias element are rotated with respect to the substantially single magnetic domain of the free layer.

Assignees

• Western Digital Tech Inc

Inventors

• Mauri Daniele
• Wang Lei
• Zheng Yuankai
• Kaiser Christian
• Hu Chih-Ching
• Mao Ming
• Jiang Ming
• Van Der Heijden Petrus Antonius

Classifications

• G01R33/0094

  Sensor arrays · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• G01R33/096

  anisotropic magnetoresistance sensors · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title