Apparatus and method for PET detector

Patent metadata

Field	Value
Publication number	US-11378702-B2
Application number	US-202017134554-A
Country	US
Kind code	B2
Filing date	Dec 28, 2020
Priority date	Aug 10, 2015
Publication date	Jul 5, 2022
Grant date	Jul 5, 2022

Abstract

A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

First claim

What is claimed is:

1. A positron emission tomography (PET) detector, the PET detector comprising:
a crystal array, the crystal array including a plurality of crystal elements arranged in a single layer, wherein each of the plurality of crystal elements includes a first surface that gamma rays enter into, a second surface opposite to the first surface, and a side surface between the first surface and the second surface; and
a semiconductor sensor array including a plurality of semiconductor sensors, the semiconductor sensor array being operably connected to a driver board, each of the plurality of semiconductor sensors having a light-receiving surface and a contact surface, the light-receiving surface being configured for receiving photons excited by the gamma rays from the second surfaces of the plurality of crystal elements, and the contact surface being opposite to the light-receiving surface that is in contact with the driver board directly;
wherein the second surfaces of a first part of the plurality of crystal elements are in contact with the light-receiving surfaces of the plurality of semiconductor sensors directly or through an adhesive material, a second part of the plurality of crystal elements is not in contact with the plurality of semiconductor sensors, and the driver board completely covers the second surfaces of the plurality of crystal elements.

2. The PET detector according to claim 1 , wherein more than one of the plurality of crystal elements in the crystal array are in contact with one semiconductor sensor of the semiconductor sensor array.

3. The PET detector according to claim 1 , wherein at least one semiconductor sensor of the semiconductor sensor array is in contact with one of the plurality of crystal elements in the crystal array.

4. The PET detector according to claim 1 , wherein a center-of-gravity of the semiconductor sensor array coincides with a center-of-gravity of the crystal array.

5. The PET detector according to claim 1 , further comprising a first amplifier, wherein an input terminal of the first amplifier is connected with an output terminal of a semiconductor sensor in a predetermined row of the semiconductor sensor array.

6. The PET detector according to claim 1 , further comprising a second amplifier, wherein an input terminal of the second amplifier is connected with an output terminal of a semiconductor sensor in a predetermined column of the semiconductor sensor array.

7. The PET detector according to claim 1 , wherein the crystal elements have a same distance between the first surface and the second surface.

8. The PET detector according to claim 1 , wherein the crystal array further includes light-reflective materials mounted on at least a portion of the side surfaces of the plurality of crystal elements.

9. The PET detector according to claim 8 , wherein the light-reflective materials mounted on the side surfaces of different crystal elements have different lengths along a direction vertical to the first surface.

10. The PET detector according to claim 8 , wherein the light-reflective materials mounted on the side surfaces of different crystal elements have a same length along a direction vertical to the first surface.

11. The PET detector according to claim 8 , wherein the light-reflective materials mounted on the side surfaces of different crystal elements have different areas.

12. The PET detector according to claim 1 , wherein one of the plurality of semiconductor sensors is in contact with nine crystal elements of the plurality of crystal elements.

13. The PET detector according to claim 1 , herein the plurality of semiconductor sensors have a same size.

14. The PET detector according to claim 1 , wherein the light-receiving surface of one of the plurality of semiconductor sensors of the semiconductor sensor array completely covers one of the plurality of crystal elements of the crystal array.

15. The PET detector according to claim 1 , wherein the semiconductor sensor array have an edge defined by at least a portion of edges of the contact surfaces of peripheral semiconductor sensors of the semiconductor sensor array, the at least a portion of the edges does not face at least one semiconductor sensor of the semiconductor sensor array, at least a portion of an area of the driver board surrounded by the edge of the semiconductor sensor array completely covers the second surfaces of the plurality of crystal elements.

16. The PET detector according to claim 15 , wherein the crystal array has an outer side surface defined by at least a portion of the side surfaces of peripheral crystal elements of the crystal array, the at least a portion of the side surfaces of the peripheral crystal elements does not face at least one crystal element of the crystal array; and
wherein the edge of the semiconductor sensor array is aligned with the outer side surface of the crystal array along a direction vertical to the first surface.

17. The PET detector according to claim 1 , wherein the semiconductor sensor array have an edge defined by at least a portion of edges of the contact surfaces of peripheral semiconductor sensors of the semiconductor sensor array, the at least a portion of the edges does not face at least one semiconductor sensor of the semiconductor sensor array, an area surrounded by the edge of the semiconductor sensor array completely covers the second surfaces of the plurality of crystal elements.

18. The PET detector according to claim 1 , wherein the number of the plurality of crystal elements is more than the number of the plurality of semiconductor sensors.

Assignees

• Shanghai United Imaging Healthcare Co Ltd

Inventors

• An Shaohui
• Zhang Qiang

Classifications

• H10F39/1898

  Indirect radiation image sensors, e.g. using luminescent members · CPC title

• G01T1/2985 Primary

  In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis); (using external radiation sources A61B6/02) · CPC title

• G01T1/1644

  using an array of optically separate scintillation elements permitting direct location of scintillations (G01T1/1645 takes precedence) · CPC title

• G01T1/2018

  Scintillation-photodiode combinations · CPC title

• H01L27/14663

  Electricity · mapped topic