Substrate/Oriented Apatite-Type Composite Oxide Film Complex and Method for Producing Same
US-2018186704-A1 · Jul 5, 2018 · US
US11374248B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11374248-B2 |
| Application number | US-201916960711-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2019 |
| Priority date | Feb 14, 2018 |
| Publication date | Jun 28, 2022 |
| Grant date | Jun 28, 2022 |
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An oriented apatite-type oxide ion conductor includes a composite oxide expressed as A9.33+x[T6.00−yMy]O26.0+z, where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, and M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and where x is from −1.00 to 1.00, y is from 0.40 to less than 1.00, and z is from −3.00 to 2.00.
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The invention claimed is: 1. An oriented apatite-type oxide ion conductor comprising a composite oxide expressed as A 9.33+x [T 6.00−y M y ]O 26.0+z , where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, and M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and where x is from −1.00 to 1.00, y is from 0.40 to less than 1.00, and z is from −3.00 to 2.00. 2. The oriented apatite-type oxide ion conductor as set forth in claim 1 , which has a degree of orientation of 0.60 or greater as measured according to the Lotgering method. 3. An electrode assembly that has a configuration in which electrodes are stacked on two surfaces of the oriented apatite-type oxide ion conductor as set forth in claim 1 . 4. A method for producing an oriented apatite-type oxide ion conductor, comprising: a step of converting a precursor expressed as A 2.00+x TO 5.00+z , where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, x is from −1.00 to 1.00, and z is from −2.00 to 2.00, into an oriented apatite-type crystal structure by heating the precursor in a gas phase containing an element M, where M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and thereby reacting the element M with the precursor; and an annealing step. 5. An electrode assembly that has a configuration in which electrodes are stacked on two surfaces of the oriented apatite-type oxide ion conductor as set forth in claim 2 .
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