Material for photoelectric conversion element for use in imaging element, and photoelectric conversion element including same

Patent metadata

Field	Value
Publication number	US-11374044-B2
Application number	US-201716318240-A
Country	US
Kind code	B2
Filing date	Jul 18, 2017
Priority date	Jul 19, 2016
Publication date	Jun 28, 2022
Grant date	Jun 28, 2022

Abstract

The present invention pertains to a material for a photoelectric conversion element for use in an imaging element, the material containing a compound represented by formula (1) (in formula (1), R 1 and R 2 independently represent a substituted or unsubstituted fused heterocyclic aromatic group). The material can provide a photoelectric conversion element having excellent hole and electron leakage preventing properties, hole and electron transport properties, heat tolerance to processing temperatures, and visible light transparency.

First claim

The invention claimed is:

1. A material for a photoelectric conversion element for use in an imaging element, comprising a compound represented by the following formula (1):

wherein R 1 and R 2 independently represent a substituted or unsubstituted benzothienyl group, a substituted or unsubstituted benzofuranyl group, or a substituted or unsubstituted benzothiazole group.

2. The material for a photoelectric conversion element for use in an imaging element according to claim 1 , wherein the compound of the formula (1) is a compound represented by the following formula (2):

wherein R 1 and R 2 are the same as R 1 and R 2 defined in the formula (1) according to claim 1 .

3. The material for a photoelectric conversion element for use in an imaging element according to claim 2 , wherein the compound of the formula (2) is a compound represented by the following formula (3):

wherein R 1 and R 2 are the same as R 1 and R 2 defined in the formula (1) according to claim 1 .

4. The material for a photoelectric conversion element for use in an imaging element according to claim 1 , wherein R 1 and R 2 each represent a substituted or unsubstituted benzo[b]furan group, a substituted or unsubstituted benzo[b]thiophene group, or a substituted or unsubstituted 2-benzo[d]thiazole group.

5. A photoelectric conversion element for use in an imaging element, comprising the material for a photoelectric conversion element for use in an imaging element according to claim 1 .

6. A photoelectric conversion element for use in an imaging element, comprising:
a p-type organic semiconductor material; and
an n-type organic semiconductor material,
wherein the p-type organic semiconductor material comprises the material for a photoelectric conversion element for use in an imaging element according to claim 1 .

7. A photoelectric conversion element for use in an imaging element, comprising:
a first electrode film (A);
a second electrode film (B); and
a photoelectric conversion portion (C) disposed between the first electrode film and the second electrode film,
wherein the photoelectric conversion portion (C) comprises at least:
a photoelectric conversion layer (c- 1 ); and
an organic thin-film layer (c- 2 ) other than the photoelectric conversion layer, and
wherein the organic thin-film layer (c- 2 ) other than the photoelectric conversion layer comprises the material for a photoelectric conversion element for use in an imaging element according to claim 1 .

8. The photoelectric conversion element for use in an imaging element according to claim 7 , wherein the organic thin-film layer (c- 2 ) other than the photoelectric conversion layer is an electron blocking layer.

9. The photoelectric conversion element for use in an imaging element according to claim 7 , wherein the organic thin-film layer (c- 2 ) other than the photoelectric conversion layer is a hole blocking layer.

10. The photoelectric conversion element for use in an imaging element according to claim 7 , wherein the organic thin-film layer (c- 2 ) other than the photoelectric conversion layer is an electron transport layer.

11. The photoelectric conversion element for use in an imaging element according to claim 7 , wherein the organic thin-film layer (c- 2 ) other than the photoelectric conversion layer is a hole transport layer.

12. The photoelectric conversion element for use in an imaging element according to claim 5 , further comprising:
a thin-film transistor (D) comprising a hole accumulation portion; and
a signal readout portion (E) that reads a signal responding to charge accumulated in the thin-film transistor.

13. The photoelectric conversion element for use in an imaging element according to claim 12 , wherein the thin-film transistor (D) comprising a hole accumulation portion further comprises a connection portion (d) electrically connecting the hole accumulation portion to any one of the first electrode film and the second electrode film.

14. An imaging element comprising a plurality of photoelectric conversion elements for use in an imaging element according to claim 7 arranged in an array.

15. A photosensor comprising the photoelectric conversion element for use in an imaging element according to claim 7 .

16. A photosensor comprising the imaging element according to claim 14 .

Assignees

• Nippon Kayaku Kk

Inventors

• NIIMI Kazuki
• Tone Yusuke
• Yakushiji Hidenori

Classifications

• H10F39/805

  Coatings · CPC title

• H10K39/10

  Organic photovoltaic [PV] modules; Arrays of single organic PV cells · CPC title

• H10K30/20

  comprising organic-organic junctions, e.g. donor-acceptor junctions · CPC title

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• H10K85/657 Primary

  Polycyclic condensed heteroaromatic hydrocarbons · CPC title