Colored filter assemblies for highly-efficient and angle-robust photovoltaic devices

Patent metadata

Field	Value
Publication number	US-11367801-B2
Application number	US-201816762774-A
Country	US
Kind code	B2
Filing date	Nov 9, 2018
Priority date	Nov 9, 2017
Publication date	Jun 21, 2022
Grant date	Jun 21, 2022

Abstract

Angle insensitive/angle-robust colored filter assemblies are provided for use with a photovoltaic device to create a decorative and colored photovoltaic device assembly. The filter may be passive or active with an ultrathin reflective layer of high refractive index material, like amorphous silicon (a-Si). A passive filter may have transparent first and second pairs of dielectric materials surrounding the ultrathin reflective layer. An active filter may have transparent first and second electrodes and first and second doped hole/electron transport layer surrounding the ultrathin reflective layer. The filter can transmit a portion and reflect a portion of the electromagnetic spectrum to generate a reflected color output with minimal angle dependence. Angle insensitive colored photovoltaic device assemblies having high power conversion efficiencies (e.g., ≥18%) including a passive or active colored reflective filter and a photovoltaic device are also contemplated. The photovoltaic device may include a photoactive layer comprising crystalline silicon (c-Si).

First claim

What is claimed is:

1. An angle insensitive colored photovoltaic device assembly comprising:
a colored reflective filter comprising:
an ultrathin reflective layer comprising silicon, having a thickness of less than or equal to about 15 nm, and defining a first side and a second side;
a transparent first pair of dielectric materials adjacent to the first side of the ultrathin reflective layer, wherein the first pair comprises a first layer of a dielectric material and a second layer of a distinct dielectric material;
a transparent second pair of dielectric materials adjacent to the second side of the ultrathin reflective layer, wherein the second pair comprises a third layer of a dielectric material and a fourth layer of a distinct dielectric material, wherein the filter is capable of transmitting a first portion of an electromagnetic spectrum having a first range of predetermined wavelengths and reflecting a second portion of the electromagnetic spectrum having a second range of predetermined wavelengths to generate a reflected output; and

a photovoltaic device adjacent to the colored reflective filter, wherein the photovoltaic device comprises at least one photoactive material.

2. The angle insensitive colored photovoltaic device assembly of claim 1 , wherein a power conversion efficiency of the photovoltaic device is greater than or equal to about 18%.

3. The angle insensitive colored photovoltaic device assembly of claim 1 , wherein the reflected output with the second range of predetermined wavelengths is in a visible light range and has a color selected from the group consisting of: red, green, blue, and combinations thereof.

4. The angle insensitive colored photovoltaic device assembly of claim 1 , wherein the dielectric material forming each of the first layer, the second layer, the third layer, and the fourth layer is independently selected from the group consisting of: silicon nitride (Si 3 N 4 ), titanium oxide (TiO 2 ), and silicon dioxide (SiO 2 ), zinc oxide (ZnO), hafnium oxide (HfO 2 ), molybdenum trioxide (MoO 3 ), tantalum pentoxide (Ta 2 O 5 ), niobium pentoxide (Nb 2 O 5 ), oxide tungsten trioxide (WO 3 ), zinc selenide (ZnSe), zinc sulfide (ZnS), aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ), and polymers with a refractive index greater than or equal to about 1.6.

5. The angle insensitive colored photovoltaic device assembly of claim 1 , wherein the dielectric material forming each of the first layer, the second layer, the third layer, and the fourth layer is independently selected from the group consisting of: silicon nitride (Si 3 N 4 ), zinc selenide (ZnSe), titanium oxide (TiO 2 ), and silicon dioxide (SiO 2 ) and the first layer has a thickness of greater than or equal to about 50 nm to less than or equal to about 300 nm, the second layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 200 nm, the third layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 200 nm, and the fourth layer has a thickness of greater than or equal to about 50 nm to less than or equal to about 300 nm.

6. The angle insensitive colored photovoltaic device assembly of claim 1 , wherein the reflected output having the second range of predetermined wavelengths exhibits: (i) blue color, wherein the ultrathin reflective layer has a thickness of greater than or equal to about 5 nm to less than or equal to about 12 nm, the first layer has a thickness of greater than or equal to about 50 nm to less than or equal to about 200 nm, the second layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 150 nm, the third layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 150 nm, and the fourth layer has a thickness of greater than or equal to about 50 nm to less than or equal to about 200 nm; (ii) a green color, wherein the ultrathin reflective layer has a thickness of greater than or equal to about 5 nm to less than or equal to about 12 nm, the first layer has a thickness of greater than or equal to about 100 nm to less than or equal to about 200 nm, the second layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 200 nm, the third layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 200 nm, and the fourth layer has a thickness of greater than or equal to about 100 nm to less than or equal to about 200 nm; or (iii) a red color, wherein the ultrathin reflective layer has a thickness of greater than or equal to about 5 nm to less than or equal to about 12 nm, the first layer has a thickness of greater than or equal to about 100 nm to less than or equal to about 300 nm, the second layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 200 nm, the third layer has a thickness of greater than or equal to about 10 nm to less than or equal to about 200 nm, and the fourth layer has a thickness of greater than or equal to about 100 nm to less than or equal to about 300 nm.

7. An angle insensitive colored photovoltaic device assembly comprising:
a colored reflective filter comprising:
an ultrathin reflective layer comprising an amorphous silicon (a-Si) material defining a first side and a second side;
a transparent first pair of dielectric materials adjacent to the first side of the ultrathin reflective layer, wherein the first pair comprises a first layer of a dielectric material and a second layer of a distinct dielectric material;
a transparent second pair of dielectric materials adjacent to the second side of the ultrathin reflective layer, wherein the second pair comprises a third layer of a dielectric material and a fourth layer of a distinct dielectric material, wherein the filter is capable of transmitting a first portion of an electromagnetic spectrum having a first range of predetermined wavelengths and reflecting a second portion of the electromagnetic spectrum having a second range of predetermined wavelengths to generate a reflected output; and

a photovoltaic device adjacent to the colored reflective filter, wherein the photovoltaic device comprises at least one photoactive material comprising a crystalline silicon (c-Si) material.

8. The angle insensitive colored photovoltaic device assembly of claim 7 , wherein a power conversion efficiency of the photovoltaic device is greater than or equal to about 18%.

9. The angle insensitive colored photovoltaic device assembly of claim 7 , wherein the ultrathin reflective layer has a thickness of less than or equal to about 15 nm.

10. The angle insensitive colored photovoltaic device assembly of claim 7 , wherein the reflected output with the second range of predetermined wavelengths is in a visible light range and has a color selected from the group consisting of: red, green, blue, and combinations thereof.

11. The angle insensitive colored photovoltaic device assembly of claim 7 , wherein the dielectric material forming each of the first layer, the second layer, the third layer, and the fourth layer is independently selected from the group consisting of: silicon nitride (Si 3 N 4 ), titanium oxide (TiO 2 ), and silicon dioxide (SiO 2 ), zinc oxide (ZnO), hafnium oxide (HfO 2 ), molybdenum trioxide (MoO 3 ), tantalum pentoxide (Ta 2 O 5 ), niobium pentoxide (Nb 2 O 5 ), oxide tungsten trioxide (WO 3 ), zinc selenide (ZnSe), zinc sulfide (ZnS), aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ), and polymers with a refractive index greater than or equal to about 1.6.

12. The angle insensitive colored photovoltaic device assembly of claim 7 , wherein the dielectric material fo

Assignees

• Univ Michigan Regents
• Toyota Motor Corp

Inventors

• Guo Lingjie Jay
• Ji Chengang
• Masuda Taizo
• Kudo Yuki

Classifications

• H10F77/492 Primary

  Spectrum-splitting means, e.g. dichroic mirrors · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• G02B5/285

  comprising deposited thin solid films (G02B5/281 - G02B5/289 take precedence; multilayered film filters for fibre optic multiplexing G02B6/29361) · CPC title

• H10F77/488 Primary

  Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection · CPC title

• G02F1/015

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title