Light emitting element array and optical transmission device

Patent metadata

Field	Value
Publication number	US-11362135-B2
Application number	US-201916552117-A
Country	US
Kind code	B2
Filing date	Aug 27, 2019
Priority date	Nov 16, 2016
Publication date	Jun 14, 2022
Grant date	Jun 14, 2022

Abstract

A light emitting element array includes a single semiconductor substrate, a plurality of semiconductor elements, which are formed on the single semiconductor substrate, and each of the semiconductor elements including a first distributed Bragg-reflector, an active layer formed over the first distributed Bragg-reflector, and a second distributed Bragg-reflector formed over the active layer. The array includes an electrode pad formed over the second distributed Bragg-reflector and a wiring formed at least partly over the second distributed Bragg-reflector and extending from the electrode pad toward the semiconductor elements. The semiconductor elements include a first semiconductor element, configured to emit laser light, and a second semiconductor element configured not to emit laser light and disposed at a position which is shorter distance along the wiring from the electrode pad than a distance along the wiring from the electrode pad to a position of the first semiconductor element.

First claim

What is claimed is:

1. A light emitting element array comprising:
a single semiconductor substrate;
a plurality of semiconductor elements, which are formed on the single semiconductor substrate, each of the semiconductor elements including a first distributed Bragg-reflector, an active layer formed over the first distributed Bragg-reflector, and a second distributed Bragg-reflector formed over the active layer;
an electrode pad formed over a portion of the second distributed Bragg-reflector; and
a wiring formed at least partly over the second distributed Bragg-reflector and extending from the electrode pad toward the semiconductor elements,
wherein each of the semiconductor elements comprises:
a first light-generating semiconductor element comprising a first aperture and configured to emit laser light through the first aperture, and
a second light-generating semiconductor element comprising a second aperture and configured, by a shielding of the second aperture, not to emit laser light through the second aperture and is disposed at a position which is shorter distance along the wiring from the electrode pad than a distance along the wiring from the electrode pad to a position of the first semiconductor element, and

wherein the first light-generating semiconductor element and the second light-generating semiconductor element have a same shape as each other.

2. The light emitting element array according to claim 1 , wherein
each of the first light-generating semiconductor element and the second light-generating semiconductor element has an oxide confinement layer which includes a non-oxidized area and an oxidized area.

3. The light emitting element array according to claim 1 , wherein
each of the semiconductor elements comprises a plurality of first light-generating, semiconductor elements.

4. The light emitting element array according to claim 3 , wherein
the second light-generating semiconductor element is disposed at a position which has the shortest distance from a center of the electrode pad along the wiring.

5. The light emitting element array according to claim 1 , wherein
the wiring is formed such that the first light-generating semiconductor element and the second light-generating semiconductor element are connected in parallel as parts of a parallel circuit.

6. The light emitting element array according to claim 1 , wherein
the wiring covers an area in which the first and second light-generating semiconductor elements are disposed.

7. The light emitting element array according to claim 6 , wherein
the wiring covers the area excluding the first emission aperture of the first light-generating semiconductor element.

8. The light emitting element array according to claim 1 , wherein
the second light-generating semiconductor element has the second aperture over the second distributed Bragg-reflector and,
the second aperture is shielded by the wiring.

9. The light emitting device, comprising:
the light emitting element array according to claim 1 ,
an optical transmission path which is coupled to the light emitting element array and is configured to transmit light from the light emitting element array.

10. The light emitting device according to claim 9 , wherein
the optical transmission path has a core portion which is configured to transmit light and a non-core portion which surrounds the core potion.

11. The optical transmission device according to claim 9 , wherein
the optical transmission path is an optical fiber.

12. The optical transmission device according to claim 11 , wherein
the optical fiber is a multi-mode fiber having a core diameter of 100 μm or less.

13. The light emitting device according to claim 9 , further comprising:
a lens configured to couple light emitted from the light emitting element array with the optical transmission path.

14. The light emitting device according to claim 9 , further comprising:
a mirror configured to reflect light emitted from the light emitting element array, wherein the light emitting device is configured to transmit light using the mirror.

15. The light emitting element array according to claim 1 ,
wherein the first light-generating semiconductor element comprises a first layer, other than the wiring, formed over the second distributed Bragg reflector at the first light-generating semiconductor element and configured to transmit laser light through the first layer,
wherein the second light-generating semiconductor element comprises a second layer formed over the second distributed Bragg reflector at the second light-generating semiconductor element, and
wherein the shielding is configured to block laser light of the second light-generating semiconductor element through the second layer.

16. The light emitting element array according to claim 15 ,
wherein the first layer and the second layer comprise a silicon nitride film, and
wherein the shielding comprises at least one of titanium and gold.

17. The light emitting element array according to claim 15 ,
wherein the first light-generating semiconductor element and the second light-generating semiconductor element are mesa elements of each of the semiconductor elements.

18. The light emitting element array according to claim 1 ,
wherein the same shape is a mesa shape.

19. The light emitting element array according to claim 1 ,
wherein each of the semiconductor elements comprises a light emitting element array comprising at least the first light-generating semiconductor element and the second light-generating semiconductor element.

Assignees

• Fujifilm Business Innovation Corp

Inventors

• Hayakawa Junichiro
• Murakami Akemi
• Nakayama Hideo
• Otsuka Tsutomu

Classifications

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H29/142 Primary

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H01S5/423 Primary

  having a vertical cavity · CPC title

• G02B6/0073

  Light emitting diode [LED] · CPC title