Light detection device

Patent metadata

Field	Value
Publication number	US-11362127-B2
Application number	US-202016834121-A
Country	US
Kind code	B2
Filing date	Mar 30, 2020
Priority date	Jul 27, 2016
Publication date	Jun 14, 2022
Grant date	Jun 14, 2022

Abstract

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

First claim

The invention claimed is:

1. A photodetecting device comprising:
a semiconductor substrate including a first principal surface and a second principal surface that oppose each other;
a plurality of avalanche photodiodes each including a light receiving region disposed at the first principal surface side of the semiconductor substrate, the avalanche photodiodes being distributed in a matrix at the semiconductor substrate, and arranged to operate in Geiger mode; and
a plurality of through-electrodes electrically connected to corresponding light receiving regions, and penetrating through the semiconductor substrate in a thickness direction,
wherein at the first principal surface of the semiconductor substrate, a groove is formed independently for each light receiving region to surround the light receiving region when viewed from a direction perpendicular to the first principal surface, and
wherein each of the avalanche photodiodes includes:
a first semiconductor region of a first conductivity type located at the first principal surface of the semiconductor substrate;
a second semiconductor region of a second conductivity type located at the second principal surface of the semiconductor substrate;
a third semiconductor region of the second conductivity type located between the first semiconductor region and the second semiconductor region and having a lower impurity concentration than the second semiconductor region; and
a fourth semiconductor region of the first conductivity type formed in the first semiconductor region and having a higher impurity concentration than the first semiconductor region,
wherein the fourth semiconductor region is the light receiving region, and
a bottom surface of the groove is constituted by the second semiconductor region.

2. The photodetecting device according to claim 1 , wherein each of the avalanche photodiodes includes:
a first semiconductor region of a first conductivity type located at the first principal surface of the semiconductor substrate;
a second semiconductor region of the first conductivity type located at the second principal surface of the semiconductor substrate and having a higher impurity concentration than the first semiconductor region;
a third semiconductor region of a second conductivity type formed at the first principal surface of the first semiconductor region; and
a fourth semiconductor region of the first conductivity type formed in the first semiconductor region to be in contact with the third semiconductor region, and having a higher impurity concentration than the first semiconductor region,
wherein the third semiconductor region is the light receiving region, and
a bottom surface of the groove is constituted by the second semiconductor region.

3. The photodetecting device according to claim 1 , further comprising:
an electrode pad disposed on the first principal surface and electrically connected to the through-electrode,
wherein, when viewed from the direction perpendicular to the first principal surface, the electrode pad is located in an area surrounded by the grooves and spaced apart from the grooves.

4. The photodetecting device according to claim 1 , wherein, when viewed from the direction perpendicular to the first principal surface, an area surrounded by the groove has a polygonal shape, and the light receiving region has a polygonal shape.

5. The photodetecting device according to claim 1 , wherein, when viewed from the direction perpendicular to the first principal surface, an opening of the through-hole has a circular shape, and
an insulating layer is disposed on an inner peripheral surface of the through-hole.

6. The photodetecting device according to claim 1 , wherein the groove surrounds an entire circumference of the corresponding light receiving region when viewed from the direction perpendicular to the first principal surface.

7. The photodetecting device according to claim 1 , wherein the grooves formed to surround the light receiving regions adjacent to each other are separated from each other.

8. A photodetecting device comprising:
a semiconductor substrate including a first principal surface and a second principal surface that oppose each other;
a plurality of avalanche photodiodes each including a light receiving region disposed at the first principal surface side of the semiconductor substrate, the avalanche photodiodes being distributed in a matrix at the semiconductor substrate, and arranged to operate in Geiger mode; and
a plurality of through-electrodes electrically connected to corresponding light receiving regions, and penetrating through the semiconductor substrate in a thickness direction,
wherein at the first principal surface of the semiconductor substrate, a groove is formed independently for each light receiving region to surround the light receiving region when viewed from a direction perpendicular to the first principal surface, and
wherein each of the avalanche photodiodes includes:
a first semiconductor region of a first conductivity type located at the first principal surface of the semiconductor substrate;
a second semiconductor region of the first conductivity type located at the second principal surface of the semiconductor substrate and having a higher impurity concentration than the first semiconductor region;
a third semiconductor region of a second conductivity type formed at the first principal surface of the first semiconductor region; and
a fourth semiconductor region of the first conductivity type formed in the first semiconductor region to be in contact with the third semiconductor region, and having a higher impurity concentration than the first semiconductor region,
wherein the third semiconductor region is the light receiving region, and
a bottom surface of the groove is constituted by the second semiconductor region.

9. The photodetecting device according to claim 8 , further comprising:
an electrode pad disposed on the first principal surface and electrically connected to the through-electrode,
wherein, when viewed from the direction perpendicular to the first principal surface, the electrode pad is located in an area surrounded by the grooves and spaced apart from the grooves.

10. The photodetecting device according to claim 8 , wherein, when viewed from the direction perpendicular to the first principal surface, an area surrounded by the groove has a polygonal shape, and the light receiving region has a polygonal shape.

11. The photodetecting device according to claim 8 , wherein, when viewed from the direction perpendicular to the first principal surface, an opening of the through-hole has a circular shape, and
an insulating layer is disposed on an inner peripheral surface of the through-hole.

12. The photodetecting device according to claim 8 , wherein the groove surrounds an entire circumference of the corresponding light receiving region when viewed from the direction perpendicular to the first principal surface.

13. The photodetecting device according to claim 8 , wherein the grooves formed to surround the light receiving regions adjacent to each other are separated from each other.

14. A photodetecting device comprising:
a semiconductor substrate including a first principal surface and a second principal surface that oppose each other;
a plurality of avalanche photodiodes each including a light receiving region disposed at the first principal surface side of the semiconductor substrate, the avalanche photodiodes being distributed in a matrix at the semiconductor substrate, and arranged to operate in Geiger mode;
a plurality of through-electrodes electrically connected

Assignees

• Hamamatsu Photonics Kk

Inventors

• Ishida Atsushi
• HOSOKAWA Noburo
• Nagano Terumasa
• Baba Takashi

Classifications

• H10W20/216

  characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes · CPC title

• H10W20/2125

  Top-view shapes · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10F77/241

  comprising ring electrodes · CPC title

• H10F77/147 Primary

  Shapes of bodies · CPC title