Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer

Patent metadata

Field	Value
Publication number	US-11359307-B2
Application number	US-201716096475-A
Country	US
Kind code	B2
Filing date	Apr 27, 2017
Priority date	Apr 28, 2016
Publication date	Jun 14, 2022
Grant date	Jun 14, 2022

Abstract

In a state in which a SiC container (3) of a material including polycrystalline SiC is housed in a TaC container (2) of a material including TaC and in which an underlying substrate (40) is housed in the SiC container (3), the TaC container (2) is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container (2) is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container (3) are bonded to Si atoms in an atmosphere so that an epitaxial layer (41) of single crystalline 3C-SiC thereby grows on the underlying substrate (40).

First claim

The invention claimed is:

1. A vapor-phase epitaxial growth method, the method comprising:
performing an epitaxial layer growth step, wherein
in a state in which a SiC container made of polycrystalline SiC is housed in a TaC container comprising TaC and a Si source and in which an underlying substrate is housed in the SiC container, the epitaxial layer growth step comprises:
heating the TaC container with a temperature gradient to generate Si vapor inside the TaC container from the Si source such that inside of the TaC container is at a Si vapor pressure,
allowing the Si vapor generated in the TaC container to move to an inside of the SiC container, and
causing an inner surface of the SiC container to be etched by the Si vapor to sublimate C atoms, the C atoms sublimated by etching are bonded to Si atoms in an atmosphere, thereby causing an epitaxial layer of single crystalline SiC to grow on the underlying substrate,
wherein the Si source is at least one of (i) Si or a Si compound contained in an inner wall of the TaC container, (ii) Si or a Si compound provided over at least a portion of the inner surface of the TaC container, and (iii) Si or a Si compound disposed in the TaC container.

2. The vapor-phase epitaxial growth method according to claim 1 , wherein
a material for the underlying substrate is an Al compound or a N compound.

3. The vapor-phase epitaxial growth method according to claim 1 , wherein
a material for the underlying substrate is SiC.

4. The vapor-phase epitaxial growth method according to claim 3 , wherein
an off-angle to a <11-20> direction or a <1-100> direction is 1° or less.

5. The vapor-phase epitaxial growth method according to claim 3 , wherein
an off-angle to a <11-20> direction or a <1-100> direction is larger than 1°.

6. The vapor-phase epitaxial growth method according to claim 1 , wherein
in the epitaxial layer growth step, the temperature gradient is 2° C./mm or less.

7. The vapor-phase epitaxial growth method according to claim 1 , wherein
in the epitaxial layer growth step, the underlying substrate comprises a plurality of underlying substrates, and
the plurality of underlying substrates are placed in the SiC container so that the epitaxial layer grows on each of the underlying substrates.

8. The vapor-phase epitaxial growth method according to claim 1 , wherein
the Si source is at least one of (i) the Si or the Si compound contained in the inner wall of the TaC container and (ii) the Si or the Si compound provided over the at least a portion of the inner surface of the TaC container, and
heating in growth of the epitaxial layer sublimates Si atoms from the inner surface of the TaC container so that inside of the TaC container is at the Si vapor pressure.

9. The vapor-phase epitaxial growth method according to claim 1 , wherein
crystalline polymorphism of the epitaxial layer is 3C-SiC.

10. The vapor-phase epitaxial growth method according to claim 1 , wherein
crystalline polymorphism of the epitaxial layer is 4H-SiC or 6H-SiC.

11. A method for producing a substrate with an epitaxial layer, the method using the vapor-phase epitaxial growth method according to claim 1 .

12. The method for producing a substrate with an epitaxial layer according to claim 11 , wherein
a material for the underlying substrate is SiC,
the underlying substrate is housed in the TaC container without interposition of a SiC container and is heated under a Si vapor pressure, thereby etching the underlying substrate.

Assignees

• Kwansei Gakuin Educational Found
• Toyota Tsusho Corp

Inventors

• Kaneko Tadaaki
• Kutsuma Yasunori
• Ashida Koji
• Hashimoto Ryo

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2908

  Nitrides · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title