Semiconductor laser diode integrated with memristor

Patent metadata

Field	Value
Publication number	US-11355899-B2
Application number	US-202017004955-A
Country	US
Kind code	B2
Filing date	Aug 27, 2020
Priority date	Aug 27, 2020
Publication date	Jun 7, 2022
Grant date	Jun 7, 2022

Abstract

An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.

First claim

What is claimed is:

1. An optical device, comprising:
a light-emitting device disposed on a substrate through a dielectric layer, the light-emitting device including a first semiconductor layer configured to emit light, wherein the substrate comprises a second semiconductor layer in contact with the dielectric layer;
a memory device integrated with the light-emitting device, wherein the memory device includes the first semiconductor layer of the light-emitting device, the dielectric layer, and the substrate, wherein the second semiconductor layer has a first portion for the light-emitting device and a second portion for the memory device, wherein the memory device comprises a first electrode coupled to the second portion of the second semiconductor layer and a second electrode coupled to the first semiconductor layer, and the light-emitting device comprises a third electrode coupled to the first portion of the second semiconductor layer and the second electrode; and
a power source configured to:
provide a first voltage between the second electrode and the third electrode to cause the light-emitting device to emit light of a first wavelength and provide a second voltage between the first electrode and the second electrode while the memory device is at OFF state to cause the light-emitting device to emit light of a second wavelength shorter than the first wavelength; and
provide the first voltage between the second electrode and the third electrode to cause the light-emitting device to emit light of the first wavelength and provide the second voltage between the first electrode and the second electrode while the memory device is at ON state to cause the light-emitting device to emit light of a third wavelength longer than the first wavelength.

2. The optical device of claim 1 , wherein the first portion and the second portion of the second semiconductor layer are separated by an insulating medium.

3. The optical device of claim 2 , wherein the insulating medium comprises air.

4. The optical device of claim 2 , wherein the insulating medium comprises a dielectric material.

5. The optical device of claim 2 , wherein the first semiconductor layer comprises a III-V material and a dopant of a first type, and the second semiconductor layer includes a dopant of a second type opposite to the first type.

6. The optical device of claim 5 , wherein the second semiconductor layer comprises silicon.

7. The optical device of claim 1 , wherein the dielectric layer comprises one or more of metal dielectrics and silicon dielectrics.

8. The optical device of claim 1 , wherein the first semiconductor layer bridges the first portion of the second semiconductor layer and the second portion of the second semiconductor layer, and extends over the insulating medium.

9. The optical device of claim 1 , wherein a difference between the third wavelength and the first wavelength is greater than a difference between the first wavelength and the second wavelength.

10. The optical device of claim 1 , further comprising a waveguide disposed adjacent to the light emitting device and configured to transmit light from the light-emitting device.

11. An optical device, comprising:
a laser device disposed on a silicon-on-insulator (SOI) substrate through a dielectric layer, the laser device including a first semiconductor layer configured to emit light, wherein the SOI substrate includes a silicon layer in contact with the dielectric layer;
a memory device integrated with the laser device, wherein the memory device includes the first semiconductor layer of the laser device, the dielectric layer, and the silicon layer, wherein the silicon layer has a first portion corresponding to the laser device and a second portion corresponding to the memory device, wherein the memory device comprises a first electrode coupled to the second portion of the silicon layer and a second electrode coupled to the first semiconductor layer, and the laser device comprises a third electrode coupled to the first portion of the silicon layer and the second electrode; and
a power source configured to:
provide a first voltage between the second electrode and the third electrode to cause the laser device to emit light of a first wavelength and provide a second voltage between the first electrode and the second electrode while the memory device is at OFF state to cause the laser device to emit light of a second wavelength shorter than the first wavelength; and
provide the first voltage between the second electrode and the third electrode to cause the laser device to emit light of the first wavelength and provide the second voltage between the first electrode and the second electrode while the memory device is at ON state to cause the laser device to emit light of a third wavelength longer than the first wavelength.

12. The optical device of claim 11 , wherein the first portion and the second portion of the silicon layer are separated by an insulating medium.

13. The optical device of claim 12 , wherein the insulating medium comprises air.

14. The optical device of claim 12 , wherein the insulating medium comprises a dielectric material.

15. The optical device of claim 12 , wherein the first semiconductor layer bridges the first portion of the silicon layer and the second portion of the silicon layer, and extends over the insulating medium.

16. The optical device of claim 11 , wherein the first semiconductor layer comprises a III-V material and a dopant of a first type.

17. The optical device of claim 16 , wherein the silicon layer includes a dopant of a second type opposite to the first type.

18. The optical device of claim 11 , wherein the dielectric layer comprises one or more of metal dielectrics and silicon dielectrics.

19. The optical device of claim 11 , wherein a difference between the third wavelength and the first wavelength is greater than a difference between the first wavelength and the second wavelength.

20. The optical device of claim 11 , further comprising a waveguide disposed adjacent to the laser device and configured to transmit light from the laser device.

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Tossoun Bassem
• Liang Di
• Strachan John Paul

Classifications

• H01S5/0225

  Out-coupling of light · CPC title

• H01S5/1096

  in a single cavity · CPC title

• H01S5/0261 Primary

  Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence) · CPC title

• H01S5/0425

  Electrodes, e.g. characterised by the structure · CPC title

• H01S5/3013

  AIIIBV compounds · CPC title