Flow-rate sensor

US11353349B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11353349-B2
Application numberUS-201917256908-A
CountryUS
Kind codeB2
Filing dateJun 20, 2019
Priority dateJul 12, 2018
Publication dateJun 7, 2022
Grant dateJun 7, 2022

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.

First claim

Opening claim text (preview).

The invention claimed is: 1. A flow-rate sensor comprising: a lead frame; a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed; a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip; and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip, wherein a lower side resin portion of the resin covering another surface side, which is on an opposite side to the one surface side of the lead frame, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm, the thinned portion extends from a position facing an inside of the void portion provided below the diaphragm to a position facing an outside of the void portion, and an opening is provided in a region of the thinned portion facing a center portion region of the diaphragm. 2. The flow-rate sensor according to claim 1 , wherein an upper side resin portion of the resin that covers the one surface side of the lead frame includes a first raised portion that covers one side region of the semiconductor chip, and a second raised portion that is provided so as to be separated from the first raised portion with the flow passage opening portion sandwiched therebetween and covers an opposite side region on a side opposite to the one side region of the semiconductor chip, and the thinned portion has a shape in which a length along the flow passage opening portion extending in a direction in which a fluid to be detected flows is larger than a length in a direction orthogonal to the direction along the flow passage opening portion. 3. The flow-rate sensor according to claim 2 , wherein the thinned portion has a polygonal shape having four or more vertices or sides, or an elliptical shape in a plan view. 4. The flow-rate sensor according to claim 2 , wherein the thinned portion has a cross shape including a vertical portion extending in the direction along the flow passage opening portion and a horizontal portion extending in the direction orthogonal to the direction along the flow passage opening portion. 5. The flow-rate sensor according to claim 4 , wherein the thinned portion is formed in a shape including a step portion connecting the vertical portion and the horizontal portion at an intersection between the vertical portion and the horizontal portion. 6. The flow-rate sensor according to claim 1 , wherein an inner side surface and an outer side surface of the thinned portion are inclined surfaces that extend outward in a thickness direction of the resin. 7. The flow-rate sensor according to claim 1 , wherein a linear expansion coefficient of the resin is smaller than a linear expansion coefficient of the lead frame.

Assignees

Inventors

Classifications

  • G01F1/692Primary

    Thin-film arrangements · CPC title

  • Structural arrangements; Mounting of elements, e.g. in relation to fluid flow · CPC title

  • the pressure or differential pressure being measured by means of a movable element, e.g. diaphragm, piston, Bourdon tube or flexible capsule · CPC title

Patent family

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Frequently asked questions

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What does patent US11353349B2 cover?
A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a port…
Who is the assignee on this patent?
Hitachi Automotive Systems Ltd, Hitachi Astemo Ltd
What technology area does this patent fall under?
Primary CPC classification G01F1/692. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 07 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).