Transparent conductive structure and preparation method thereof, display substrate and touch substrate

Patent metadata

Field	Value
Publication number	US-11347337-B2
Application number	US-202016963902-A
Country	US
Kind code	B2
Filing date	Feb 10, 2020
Priority date	Mar 12, 2019
Publication date	May 31, 2022
Grant date	May 31, 2022

Abstract

The present disclosure provides a transparent conductive structure and a preparation method thereof, a display substrate, and a touch substrate, which belongs to the technical field of display panels. The transparent conductive structure is provided on a substrate. The method for manufacturing a transparent conductive structure includes: providing the substrate; forming a transparent conductive layer on the substrate; forming a heat insulation layer on a surface of the transparent conductive layer away from the substrate, the heat insulation layer having at least one window region exposing the transparent conductive layer; heating the transparent conductive layer for a preset time period, to form at least one insulating region on the transparent conductive layer; and removing the heat insulation layer.

First claim

What is claimed is:

1. A method for manufacturing a transparent conductive structure provided on a substrate, comprising:
providing the substrate;
forming a transparent conductive layer on the substrate;
forming a heat insulation layer on a surface of the transparent conductive layer away from the substrate, the heat insulation layer having at least one window region exposing the transparent conductive layer;
heating the transparent conductive layer for a preset time period to form at least one insulating region on the transparent conductive layer; and
removing the heat insulation layer, wherein:
an orthographic projection of each window region on the substrate is located within an orthographic projection of each insulating region on the substrate; and
an edge of any of the insulating regions exceeds an edge of a corresponding window region by 0 micron to 0.9 microns.

2. The method for manufacturing the transparent conductive structure according to claim 1 , wherein a material of the transparent conductive layer is a transparent conductive metal oxide.

3. The method for manufacturing the transparent conductive structure according to claim 2 , wherein the transparent conductive metal oxide is indium tin oxide, indium zinc oxide, or indium gallium zinc oxide.

4. The method for manufacturing the transparent conductive structure according to claim 1 , wherein a material of the heat insulation layer is a photoresist.

5. The method for manufacturing the transparent conductive structure according to claim 4 , wherein the photoresist is a phenolic resin photoresist.

6. The method for manufacturing the transparent conductive structure according to claim 1 , wherein the substrate is a heat insulation substrate.

7. The method for manufacturing the transparent conductive structure according to claim 1 , wherein the heat insulation layer has a heat insulation pattern, and the heat insulation pattern covers at least a part of the transparent conductive layer.

8. The method for manufacturing the transparent conductive structure according to claim 7 , wherein the heat insulation pattern and a window region are complementary patterns.

9. The method for manufacturing the transparent conductive structure according to claim 1 , wherein the transparent conductive layer is heated at a temperature of 550 to 650° C.

10. The method for manufacturing the transparent conductive structure according to claim 1 , wherein the preset time period is 30 to 60 min.

11. A transparent conductive structure, comprising:
a transparent conductive pattern made of a transparent conductive material; and
an insulating pattern provided on an identical layer as the transparent conductive pattern and being complementary with the transparent conductive pattern, and prepared by heating the transparent conductive material for a preset time period,
wherein a crystal structure integrity of the transparent conductive material is destroyed under heating and the transparent conductive material is transformed into an insulating material.

12. The transparent conductive structure according to claim 11 , wherein the transparent conductive material is a transparent conductive metal oxide.

13. The transparent conductive structure according to claim 12 , wherein the transparent conductive metal oxide is indium tin oxide, indium zinc oxide, or indium gallium zinc oxide.

14. A substrate comprising a transparent conductive structure, the transparent conductive structure comprising:
a transparent conductive pattern made of a transparent conductive material; and
an insulating pattern provided on an identical layer as the transparent conductive pattern and being complementary with the transparent conductive pattern, and prepared by heating the transparent conductive material for a preset time period,
wherein a crystal structure integrity of the transparent conductive material is destroyed under heating and the transparent conductive material is transformed into an insulating material.

15. The substrate according to claim 14 , wherein the transparent conductive material is a transparent conductive metal oxide.

16. The substrate according to claim 14 , wherein the substrate is a display substrate or a touch substrate.

Assignees

• Hefei Xinsheng Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Ma Tao
• Hao Chaowei
• Chen Yanbo

Classifications

• G06F3/041 Primary

  Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• G06F3/045

  using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact · CPC title

• G06F3/0412 Primary

  Digitisers structurally integrated in a display · CPC title

• H01B5/14

  comprising conductive layers or films on insulating-supports · CPC title