System and methods for fabricating boron nitride nanostructures

US11345595B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11345595-B2
Application numberUS-201515321177-A
CountryUS
Kind codeB2
Filing dateJun 24, 2015
Priority dateJun 25, 2014
Publication dateMay 31, 2022
Grant dateMay 31, 2022

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: providing an inductively coupled plasma-generating torch comprising a torch body, a nozzle, a top port, a first radial port and a second radial port, wherein the top port is on a top portion of the torch body, wherein the first and second radial ports are positioned at a bottom portion of the torch body, and wherein a bottom portion of the torch body is attached to a chamber; generating a directed flow of plasma using a single gas composition from the nozzle toward the bottom portion of the torch body, wherein a pressure within the inductively coupled plasma-generating torch is about 3 atmospheres or greater; radially introducing a boron-containing species through the first radial port into the directed flow of plasma downstream of the nozzle, wherein the directed flow of plasma is a fully formed and stable plume; and continuously forming boron nitride nanostructures in the chamber at a rate of at least about 35 g/hour downstream of the nozzle as a result of the introduction of the boron-containing species to the directed flow of plasma, wherein a pressure in the chamber is about 3 atmospheres or greater. 2. The method of claim 1 , wherein the single gas composition comprises nitrogen gas. 3. The method of claim 1 , wherein the pressure in the chamber is between 3 atm and 100 atm. 4. The method of claim 1 , wherein the boron-containing species includes hexagonal boron nitride powder. 5. The method of claim 1 , wherein the boron-containing species consists of boron powder. 6. The method of claim 1 , wherein the continuously forming operation is performed without the use of a catalyst. 7. The method of claim 1 , wherein the boron nitride nanostructures are formed in the chamber that is actively cooled during the generating, radially introducing and continuously forming operations. 8. The method of claim 1 , wherein the boron-containing species comprises an oxide of boron or an acid of boron, and the method further comprises introducing a carbon-containing species to the directed flow of the plasma in the radially introducing operation. 9. The method of claim 8 , wherein the oxide of boron is selected from a group consisting of boron trioxide (B 2 O 3 ), diboron dioxide (B 2 O 2 ), and boric acid (H 3 BO 3 ). 10. The method of claim 8 , wherein the carbon-containing species is selected from a group consisting of amorphous carbon, carbon black, graphite, carbon nanotubes, graphene, and graphite oxide. 11. The method of claim 8 , further comprising introducing a catalyst to the directed flow of the plasma in the radially introducing operation. 12. The method of claim 1 , further comprising radially introducing plasma gas through the second radial port, wherein the plasma gas travels from the bottom to the top of the torch body along an inner wall of the torch body and down through a center of the torch body. 13. A method comprising: Providing an inductively coupled plasma-generating torch comprising a torch body, a nozzle, a top port, a first radial port and a second radial port, wherein the top port is on a top portion of the torch body, and wherein the first and second radial ports are positioned at a bottom portion of the torch body; generating a directed flow of plasma using a single gas composition comprising nitrogen gas from the nozzle toward the bottom portion of the torch body; radially introducing a boron-containing species to the directed flow of plasma through the first radial port, the boron-containing species consisting of boron powder downstream of the nozzle, wherein the plasma plume is fully formed; and continuously forming boron nitride nanostructures in a chamber, a pressure in the chamber being about 3 atmospheres or greater downstream of the nozzle as a result of the introduction of the boron-containing species to the directed flow of plasma. 14. The method of claim 13 , wherein the continuously forming operation is performed without the use of a catalyst. 15. The method of claim 13 , further comprising radially introducing plasma gas through the second radial port, wherein the plasma gas travels from the bottom to the top of the torch body along an inner wall of the torch body and down through a center of the torch body.

Assignees

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Classifications

  • with boron · CPC title

  • Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products · CPC title

  • Processes carried out in the presence of a plasma · CPC title

  • Products characterised by their size, e.g. microceramics · CPC title

  • Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor (application of shock waves B01J3/08) · CPC title

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What does patent US11345595B2 cover?
This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A bo…
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification C01B21/0641. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 31 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).