Method for preparing large-area transition metal dichalcogenide single-crystal films by performing vapor deposition on a single-crystal c-plane sapphire substrate with <10-10> surface steps

Patent metadata

Field	Value
Publication number	US-11339501-B2
Application number	US-202017000196-A
Country	US
Kind code	B2
Filing date	Aug 21, 2020
Priority date	Jun 29, 2020
Publication date	May 24, 2022
Grant date	May 24, 2022

Abstract

The present invention discloses a method for preparing large-area transition metal dichalcogenide (TMDC) single-crystal films and the products obtained therefrom. The method comprises the steps of: (1) providing a single-crystal C-plane sapphire with surface steps along <1010> directions; and (2) taking the sapphire in step (1) as the substrate, generating unidirectionally arranged TMDC domains on the sapphire surface based on a vapor deposition method and keeping the domains continuously grow and merge into a large-area single-crystal film. The lateral size of the TMDC single-crystal films prepared by the method can reach inch level or above, and is limited only by the size of the substrate.

First claim

What is claimed is:

1. A method for preparing a transition metal dichalcogenide single-crystal films, characterized by comprising the steps of:
(1) providing a single-crystal C-plane sapphire substrate with surface steps along <10 1 0> orientation of the substrate, wherein the <10 1 0> steps of the C-sapphire substrate are obtained by a major mis-cut towards <11 2 0> crystallographic axis during machining process; and a minor mis-cut angle towards <10 1 0> direction shall be less than 34.6% of the major mis-cut angle of the A-axis direction; and
(2) taking the C-sapphire in step (1) as the substrate, generating unidirectionally arranged transition metal dichalcogenide domains on the surface of the substrate using a vapor deposition method and keeping the domains continuously grow and merge into a single-crystal film;
wherein grains are aligned in an unidirectional manner and merged without gap between the grains into an entire single-crystal film up to length of two inch with grain boundary-free; the transition metal dichalcogenide is selected from the group consisting of molybdenum disulfide, tungsten disulfide, molybdenum diselenide and tungsten diselenide.

2. The method for preparing the transition metal dichalcogenide single-crystal films of claim 1 , characterized in that in step (1), the surface atomic-level steps are oriented along the <10 1 0> direction of the C-sapphire substrate within an allowable angular deviation of ±19.1°.

3. The method for preparing the transition metal dichalcogenide single-crystal films of claim 1 , characterized in that in step (2), the vapor deposition methods include chemical vapor deposition method, molecular beam epitaxy method, pulsed laser deposition method, or magnetron sputtering method.

4. The method for preparing the transition metal dichalcogenide single-crystal films of claim 3 , characterized in that in step (2), the transition metal dichalcogenide crystals prepared by the chemical vapor deposition method comprising: placing the sapphire in a vapor deposition chamber, loading the growth sources, setting a growth condition, and generating unidirectionally arranged transition metal dichalcogenide domains on the sapphire surface; and continuously introducing the growth sources to allow the transition metal dichalcogenide domains to gradually grow and merge into a transition metal dichalcogenide single-crystal film.

Assignees

• Nanjing University Of Technology

Inventors

• Wang Xinran
• Li Taotao
• Shi Yi

Classifications

• C30B29/46 Primary

  Sulfur-, selenium- or tellurium-containing compounds · CPC title

• C30B25/16

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B23/025

  characterised by the substrate · CPC title

• C30B25/186 Primary

  being specially pre-treated by, e.g. chemical or physical means · CPC title

• C30B25/18

  characterised by the substrate · CPC title