Atomic layer deposition apparatus and method for processing substrates using an apparatus

Patent metadata

Field	Value
Publication number	US-11339474-B2
Application number	US-202016833937-A
Country	US
Kind code	B2
Filing date	Mar 30, 2020
Priority date	Nov 4, 2014
Publication date	May 24, 2022
Grant date	May 24, 2022

Abstract

An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

First claim

The invention claimed is:

1. A substrate processing apparatus, comprising:
a lower wall including a plurality of gas injection openings;
an upper wall extending parallel to the lower wall including a plurality of gas injection openings;
a first and a second side wall extending substantially perpendicularly relative to the lower wall;
wherein the lower wall, the upper wall and the first and the second side walls bound a process tunnel having a length extending in a transport direction and having a width extending transversally to the transport direction and defining a longitudinal axis extending in a vertical middle plane that is positioned centrally between the first and the second side wall and extending in a horizontal middle plane that is position centrally between the lower and the upper wall;
the apparatus additionally including:
a gas source connected to the gas injection openings;
a plurality of gas exhaust openings that are arranged in the lower wall and the upper wall;
an exhaust channel that is in fluid connection with the gas exhaust openings;
wherein the distribution of the gas injection openings in the lower wall and the upper wall,
the distribution of the gas exhaust openings in the lower wall and/or the upper wall, a ratio between a thickness of a substrate to be processed and a distance between the lower wall and the upper wall, the flow rate of gas supplied through the gas injection openings, and the flow rate of exhaust of gas through the exhaust openings are such that, in use gas bearings are formed above and below a substrate that is present in the process tunnel; and
wherein in the upper wall and/or the lower wall the plurality of gas injection openings includes subsets of gas injection openings,
wherein the gas injection openings of a said subset of gas injection openings are positioned on an imaginary line segment associated with the subset of gas injection openings and having a length,
wherein each imaginary line segment extends in the upper wall and/or the lower wall in which the gas injection openings of the associated subset are included,
wherein an angle α with the transport direction complies with 60°≤α<90°, and preferably complies with 70°≤α≤80°,
wherein the plurality of gas exhaust openings includes subsets of gas exhaust openings, wherein each subset of gas exhaust openings is associated with an associated subset of gas injection openings,
wherein the gas exhaust openings of a respective subset of said subsets of gas exhaust openings are on the same imaginary line segment as the gas injection openings of the subset of gas injection openings which is associated with the respective subset of said subsets of gas exhaust openings,
wherein the gas exhaust openings are intermittently positioned between the gas injection openings of the subset of gas injection openings which is associated with the respective subset of gas exhaust openings, such that, in use, the gases flowing from the gas injection openings which are on a said imaginary line segment to the adjacent gas exhaust openings on the same imaginary line segment exert a drag force on the substrate resulting in a forward movement and/or rotational movement of the substrate.

2. The substrate processing apparatus according to claim 1 , wherein a said imaginary line segment extends substantially over the entire width of the upper wall and/or the lower wall, such that the resultant drag force imparts, in use, a rotation to the substrate, and such that the resultant drag force in a direction perpendicular to the transport direction is zero.

3. The substrate processing apparatus according to claim 1 , wherein the process tunnel defines a vertical middle plane which extends vertically and is positioned centrally between the first and the second side wall, wherein a first one of said imaginary line segments, when viewed in the transport direction, extends from the vertical middle plane laterally towards the first side wall and in the transport direction and has a first end point in the vertical middle plane and a second end point adjacent the first side wall, wherein a second one of said imaginary line segments, when viewed in the transport direction, extends from the vertical middle plane laterally towards the second side wall and in the transport direction and has a first end point in the vertical middle plane and a second end point adjacent the second side wall, such that, in use, the resultant drag force imparts a forward or a backward movement to the substrate, and such that the resultant drag force in a direction perpendicular to the transport direction is zero.

4. The substrate processing apparatus according to claim 1 , wherein the process tunnel defines a vertical middle plane which extends vertically and is positioned centrally between the first and the second side wall,
wherein the length of any one of the said imaginary line segments does not span the entire width of the associated upper or lower wall, and
wherein a group of imaginary line segments associated with each other span the entire width of the upper or lower wall,
wherein some of the imaginary line segments of the group are at an angle α with the right side of the vertical middle plane whereas at least one other imaginary line segment of the group is at an angle α with the left side of the vertical middle plane,
wherein the total length of the lines that include an angle α with the right side of the vertical middle plane is different from the total length of the lines that include an angle α with the left side of the vertical middle plane, such that the resultant drag force imparts a forward or backward movement to the substrate as well as a rotational movement to the substrate, and
wherein the resultant drag force in a direction perpendicular to the transport direction is zero.

5. The substrate processing apparatus according to claim 1 , the apparatus additionally including:
a first precursor gas source connected to series of gas injection openings of the plurality of gas injection openings so as to create first precursor gas injection zones that extend over substantially the entire width of the process tunnel and that are spatially arranged along the transport direction of the process tunnel;
a purge gas source connected to series of gas injection openings of the plurality of gas injection openings so as to create purge gas injection zones that extend over substantially the entire width of the process tunnel and that are spatially arranged along the transport direction of the process tunnel;
a second precursor gas source connected to series of gas injection openings of the plurality of gas injection openings so as to create second precursor gas injection zones that extend over substantially the entire width of the process tunnel and that are spatially arranged along the transport direction of the process tunnel;
wherein the connections of the first precursor gas source, the purge gas source and the second precursor gas source to the respective gas injection openings are such that a plurality of successive process sections is created in the process tunnel along the transport direction, wherein each process section includes successively a first precursor gas injection zone, a purge gas zone, a second precursor gas injection zone, and a purge gas zone.

6. The substrate processing apparatus according to claim 5 , wherein each first precursor gas injection zone, each purge gas zone and each second precursor gas injection zone includes at least one of said subsets of gas injection openings that is positioned on a said line and at least one of said associated subsets of gas exhaust openings positioned intermittently between the gas injection openings, such that, in use, the gases flowing from the gas injection openings to the adjacent ga

Assignees

• Asm Int Nv

Inventors

• Granneman Ernst Hendrik August
• Hu Leilei

Classifications

• H10P72/3314

  Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers · CPC title

• H10P72/36

  using air tracks · CPC title

• H01J37/3244

  Gas supply means · CPC title

• C23C16/4401 Primary

  Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title

• C23C16/45548 Primary

  having arrangements for gas injection at different locations of the reactor for each ALD half-reaction · CPC title