Method for producing yttrium oxide-containing thin film by atomic layer deposition

Patent metadata

Field	Value
Publication number	US-11335896-B2
Application number	US-201816494838-A
Country	US
Kind code	B2
Filing date	Feb 13, 2018
Priority date	Mar 29, 2017
Publication date	May 17, 2022
Grant date	May 17, 2022

Abstract

A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

First claim

The invention claimed is:

1. A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising:
(A) a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and
(B) a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium,
wherein a temperature of the substrate in step (B) falls within the range of 150° C. to 300° C.,
wherein the reactive gas containing water vapor is a mixed gas of water vapor and at least one selected from the group consisting of argon, nitrogen, oxygen and hydrogen,
wherein a concentration of the water vapor in the mixed gas is 0.01 vol. % to 10 vol. %, and
wherein a carbon content in the yttrium oxide-containing thin film is lower than 0.1 atom %.

2. The method for producing an yttrium oxide-containing thin film according to claim 1 , wherein the method has a step for discharging the gas of the treatment atmosphere between step (A) and step (B), and/or following step (B).

3. The method for producing an yttrium oxide-containing thin film according to claim 1 , wherein a film formation cycle including step (A) and step (B) is repeated in this order.

4. The method for producing an yttrium oxide-containing thin film according to claim 2 , wherein a film formation cycle including step (A) and step (B) is repeated in this order.

Assignees

• Adeka Corp

Inventors

• Nishida Akihiro
• Yamashita Atsushi

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/40

  Oxides · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title