Quantum dot solid-state film and method for preparing same, and quantum dot light-emitting diode

Patent metadata

Field	Value
Publication number	US-11335873-B2
Application number	US-201816493606-A
Country	US
Kind code	B2
Filing date	Mar 13, 2018
Priority date	Mar 15, 2017
Publication date	May 17, 2022
Grant date	May 17, 2022

Abstract

Disclosed are quantum dot solid-state film, method for preparing same, and quantum dot light-emitting diode. Method comprises: providing quantum dot solution, preparing quantum dot material solid-state film on substrate; before being immersed in surface modifier solution to obtain quantum dot material solid-state film modified by a surface modifier; providing a metal nanoparticle seed solution, using solution method to deposit nanoparticle on quantum dot material solid-state film modified by surface modifier to obtain a quantum dot material solid-state film with the surface having adsorbed a layer of metal nanoparticle seed; before being immersed in a metal nano wire precursor solution, nanoparticle to perform a metal nano wire growth, finally obtaining a quantum dot solid-state film. The quantum dot solid-state film obtained using method of invention can effectively and rapidly transmit electrical charges, improving overall performance of device.

First claim

What is claimed is:

1. A quantum dot solid-state film, wherein the quantum dot solid-state film comprises a quantum dot material solid-state film, the quantum dot material solid-state film has a layer of metal nanowires grown on a surface, the layer of metal nanowires being grown in a direction perpendicular to the surface, wherein the quantum dot material solid-state film comprises a quantum dot and a surface modifier, and the surface modifier is at least one of a (3-aminoethyl) triethoxysilane, a (3-aminobutyl) triethoxysilane, a (3-aminoethyl) tripropoxysilane, a (3-aminopropyl) tripropoxysilane, a (3-aminobutyl) tripropoxysilane, a (3-aminoethyl) tributoxysilane, a (3-aminopropyl tributyloxysilane, and a (3-aminobutyl) tributoxysilane.

2. The quantum dot solid-state film according to claim 1 , wherein the metal nanowire is one of an Au nanowire, an Ag nanowire, and a Cu nanowire.

3. A quantum dot light emitting diode, wherein the quantum dot light emitting diode comprises a cathode and an anode, and between the cathode and the anode, a quantum dot solid-state film is arranged, the quantum dot material solid-state film has a layer of metal nanowires grown on a surface, the layer of metal nanowires being grown in a direction perpendicular to the surface, wherein the quantum dot material solid-state film comprises a quantum dot and a surface modifier, and the surface modifier is at least one of a (3-aminoethyl) triethoxysilane, a (3-aminobutyl) triethoxysilane, a (3-aminoethyl) tripropoxysilane, a (3-aminopropyl) tripropoxysilane, a (3-aminobutyl) tripropoxysilane, a (3-aminoethyl) tributoxysilane, a (3-aminopropyl tributyloxysilane, and a (3-aminobutyl) tributoxysilane.

4. The quantum dot light emitting diode according to claim 3 , further comprising an anode, a hole injection layer, a hole transport layer, a quantum dot solid-state film, an electron transport layer and a cathode combined in a laminated sequence.

5. The quantum dot light emitting diode according to claim 3 , wherein the metal nanowire is one of an Au nanowire, an Ag nanowire, and a Cu nanowire.

6. The quantum dot solid-state film according to claim 1 , wherein the quantum dot is a binary phase quantum dot.

7. The quantum dot solid-state film according to claim 1 , wherein the quantum dot is a ternary phase quantum dot.

8. The quantum dot solid-state film according to claim 1 , wherein the quantum dot is a quaternary phase quantum dot.

Assignees

• Tcl Tech Group Corp

Inventors

• Cheng Luling
• Yang Yixing

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B82Y30/00 Primary

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• H01L51/5056

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic