Resin, photosensitive resin composition, electronic component and display device using the same

Patent metadata

Field	Value
Publication number	US-11333976-B2
Application number	US-201615545912-A
Country	US
Kind code	B2
Filing date	Jan 25, 2016
Priority date	Jan 27, 2015
Publication date	May 17, 2022
Grant date	May 17, 2022

Abstract

A resin having a small linear thermal expansion coefficient and a low absorbance is provided. The resin is characterized by including at least one structure selected from structures represented by the following general formulae (1) and (2):

First claim

The invention claimed is:

1. A resin comprising at least one selected from a polyimide, polyamideimide, polyimide precursor, and a copolymer thereof, wherein each of said polyimide, polyamideimide, polyimide precursor and the copolymer thereof is a resin having a structure of at least one selected from structures represented by the following general formulae (1), (3) and (4):

wherein, in the general formula (1), R 1 and R 2 each independently represents a halogen atom or a monovalent organic group having 1 to 3 carbon atoms,
R 3 and R 4 each represents a group selected from a hydroxyl group and a carboxyl group,

wherein, in the general formula (3), for R 9 and R 10 :
i) R 9 represents a structure of general formula (1) or general formula (6), and R 10 is an organic group having 2 to 50 carbon atoms, or
ii) R 9 is an organic group having 2 to 50 carbon atoms, and R 10 represents a structure of general formula (7), or
iii) R 9 represents a structure selected of the general formula (1) or the general formula (6), and R 10 represents a structure of the general formula (7),
R 11 represents hydrogen or an organic group having 1 to 10 carbon atoms,
m 3 is an integer of 1 or 2, and
n 2 represents a range of 10 to 100,000,

wherein, in the general formula (4), for R 12 and R 13 :
i) R 12 represents a structure of the general formula (1) or general formula (6), and R 13 is an organic group having 2 to 50 carbon atoms, or
ii) R 12 is an organic group having 2 to 50 carbon atoms, and R 13 represents a structure of general formula (7), or
iii) R 12 represents a structure selected from the general formula (1) or the general formula (6), and R 13 represents a structure selected from the general formula (7),
m 4 is an integer of 0 or 1,
c 1 is an integer of 0 or 1, c 1 =1 when m 4 =0, and c 1 =0 when m 4 =1, and
n 3 represents a range of 10 to 100,000,

wherein, in the general formula (6),
R 16 to R 19 each independently represents a halogen atom or a monovalent organic group having 1 to 3 carbon atoms,
R 20 and R 21 each represents a group selected from a hydroxyl group and a carboxyl group,
X 4 and X 5 each represents a structure selected from an amide bond and an azomethine bond,
b 7 and b 8 are integers of 0 to 4,

wherein, in the general formula (7), R 22 to R 25 each independently represents a halogen atom or a monovalent organic group having 1 to 3 carbon atoms,
R 26 and R 27 each represents a group selected from a hydroxyl group and a carboxyl group,
X 7 and X 8 each represents a structure selected from an amide bond and an azomethine bond,
b 11 and b 12 are integers of 0 to 3, and
m 5 and m 6 are integers of 0 or 1,
provided that:
wherein when R 10 of the general formula (3) represents a structure of the general formula (7), m 5 +m 6 =1 when m 3 =1, and m 5 +m 6 =2 when m 3 =2; and
wherein when R 13 of the general formula (4) represents a structure of the general formula (7), m 5 +m 6 =1 when m 4 =0, and m 5 +m 6 +2 when m 4 =1.

2. The resin according to claim 1 , wherein the resin is a resin that forms a resin film having an absorbance at a wavelength of 365 nm per 1 μm thickness of 0.005 or more and 0.3 or less.

3. The resin according to claim 1 , wherein an average linear thermal expansion coefficient of the resin at 50 to 200° C. measured after heat treatment of the resin at 250° C. is −10 to 40 ppm/° C.

4. The resin according to claim 1 , wherein the resin forms a resin film which has a film thickness reduction rate of 10 nm/min or more and 30000 nm/min or less when immersed in a 2.38% tetramethylammonium hydroxide aqueous solution.

5. A resin composition comprising the resin according to claim 1 .

6. The resin composition according to claim 5 , comprising a photo acid generator or a photopolymerization initiator.

7. A process for producing a heat resistance coating film, comprising: coating the resin composition according to claim 5 onto a support substrate to form a coating film; drying the coating film to form a resin film; exposing the resin film; developing the exposed resin film; and applying heat treatment to the developed resin film.

8. A process for producing a heat resistance coating film, comprising: coating the resin composition according to claim 5 onto a support substrate using a slit nozzle to form a coating film; drying the coating film under reduced pressure to form a resin film; exposing the resin film; developing the exposed resin film; and applying heat treatment to the developed resin film.

9. The process for producing a heat resistance coating film according to claim 7 , wherein the step of applying heat treatment to the resin film is performed at 250° C. or less.

10. The process for producing a heat resistance coating film according to claim 7 , wherein residual stress of a resin forming a heat resistance coating film of a substrate with the heat resistance coating film obtained by the process for producing the heat resistance coating film is 30 MPa or less.

11. An electronic component mounted in such a state that one or a plurality of structures comprising a substrate and a coating film provided on one or both surfaces of the substrate are stacked, the coating film is a heat resistance coating film obtained by the production process according to claim 7 .

12. An electronic component comprising a substrate, a rewiring structure comprising a coating film layer and a wiring layer alternately formed on the substrate, or a multilayer wiring structure, wherein the coating film layer is a heat resistance coating film obtained by the production process according to claim 7 .

13. A display device comprising a first electrode provided on a substrate, an insulating layer provided on the first electrode such that the first electrode is partially exposed, and a second electrode provided facing the first electrode, wherein the insulating layer is a heat resistance coating film obtained by the production process according to claim 7 .

14. A display element comprising a flattening film provided to cover concavoconvexes on a substrate comprising a thin film transistor (TFT) and a display element provided on the flattening film, wherein the flattening film is a heat resistance coating film obtained by the production process according to claim 7 .

Assignees

• Toray Industries

Inventors

• Yuba Tomoyuki
• Masuda Yuki
• Jin Jiake
• Li Ping

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title