Bulk-acoustic wave resonator and bulk-acoustic wave filter device

Patent metadata

Field	Value
Publication number	US-11329623-B2
Application number	US-202016934265-A
Country	US
Kind code	B2
Filing date	Jul 21, 2020
Priority date	Apr 3, 2020
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer covering at least a portion of the first electrode, and a second electrode covering at least a portion of the piezoelectric layer. When an active region, in which the first electrode and the second electrode are disposed to overlap each other, is viewed from above, among four sides of a rectangle with which at least three vertices of a polygon formed by the active region are in contact, a longest side is defined as a side B and a side connected to side B is defined as a side A, and an aspect ratio (side B/side A) is 1.3 to 3.

First claim

What is claimed is:

1. A bulk-acoustic wave resonator comprising:
a substrate;
a first electrode disposed on the substrate;
a piezoelectric layer covering at least a portion of the first electrode; and
a second electrode covering at least a portion of the piezoelectric layer,
wherein an active region, in which the first electrode and the second electrode overlap each other, is enclosed by a polygon when the bulk-acoustic wave resonator is viewed from above, and
wherein when a rectangle is drawn such that three vertices of the polygon are in contact with three sides of the rectangle and one side of the polygon extends within a remaining side of the rectangle, a longest side of the rectangle is defined as a side B, and a side connected to the side B is defined as a side A, an aspect ratio (side B/side A) is 1.3 to 3.

2. The bulk-acoustic wave resonator of claim 1 , further comprising:
a metal pad connected to the first electrode and the second electrode.

3. The bulk-acoustic wave resonator of claim 2 , wherein the metal pad comprises a first metal pad, having an edge portion disposed to cover a portion of the active region, and a second metal pad disposed to oppose the first metal pad.

4. The bulk-acoustic wave resonator of claim 2 , wherein the first metal pad is connected to the first electrode, and the second metal pad is connected to the second electrode.

5. The bulk-acoustic wave resonator of claim 1 , further comprising:
a membrane layer or a seed layer disposed between the substrate and the first electrode, and defining a cavity together with the substrate.

6. The bulk-acoustic wave resonator of claim 5 , further comprising:
an etching prevention portion disposed to cover the cavity.

7. The bulk-acoustic wave resonator of claim 6 , further comprising:
a sacrificial layer disposed outside of the etching prevention portion.

8. The bulk-acoustic wave resonator of claim 1 , further comprising:
an insertion layer disposed between the first electrode and the piezoelectric layer.

9. The bulk-acoustic wave resonator of claim 1 , wherein the piezoelectric layer is formed of aluminum nitride (AlN) or aluminum nitride (AlN) doped with a dopant.

10. The bulk-acoustic wave resonator of claim 9 , wherein the dopant comprises at least one selected from the group consisting of scandium (Sc), erbium (Er), yttrium (Y), lanthanum (La), titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), and niobium (Nb), or combinations thereof.

11. The bulk-acoustic wave resonator of claim 1 , wherein an area of the active region is 10000 μm 2 or less when the active region is viewed from above.

12. A bulk-acoustic wave filter device comprising:
a substrate;
a plurality of series resonators disposed on the substrate; and
a plurality of shunt resonators connected to the plurality of series resonator on the substrate,
wherein, in each of the plurality of series resonators and the plurality of shunt resonators, an active region is enclosed by a polygon when the bulk-acoustic wave resonator is viewed from above, and
wherein when a rectangle is drawn such that three vertices of the polygon are in contact with three sides of the rectangle and one side of the polygon extends within a remaining side of the rectangle, a longest side of the rectangle is defined as a side B, and a side connected to the side B is defined as a side A, an aspect ratio (side B/side A) is 1.3 to 3.

13. The bulk-acoustic wave filter device of claim 12 , wherein
each of the series resonators and the shunt resonators comprises a metal pad connected to a first electrode and a second electrode.

14. The bulk-acoustic wave filter device of claim 13 , wherein the metal pad comprises a first metal pad, having an edge portion disposed to cover a portion of the active region, and a second metal pad disposed to oppose the first metal pad.

15. The bulk-acoustic wave filter device of claim 12 , wherein the aspect ratio of each of the plurality of series resonators is greater than the aspect ratio of each of the plurality of shunt resonators.

16. The bulk-acoustic wave filter device of claim 12 , wherein the aspect ratio of each of the plurality of series resonators is smaller than the aspect ratio of each of the plurality of shunt resonators.

17. The bulk-acoustic wave filter device of claim 12 , wherein an area of the active region is 10000 μm 2 or less when the active region is viewed from above.

Assignees

• Samsung Electro Mech

Inventors

• Lee Tae Kyung
• Han Won
• Son Sang Uk
• Lee Hwa Sun
• Lee Moon Chui

Classifications

• H03H9/02

  Details · CPC title

• H03H9/02118 Primary

  of lateral leakage between adjacent resonators · CPC title

• H03H9/133

  for electromechanical delay lines or filters · CPC title

• H03H2009/02173

  of film bulk acoustic resonators [FBAR] · CPC title

• H03H9/547

  Notch filters, e.g. notch BAW or thin film resonator filters · CPC title