Quantum dot light-emitting diode device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11329243-B2
Application number	US-201916627359-A
Country	US
Kind code	B2
Filing date	Nov 12, 2019
Priority date	Jun 27, 2019
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

The present invention provides a quantum dot light-emitting diode device, which includes a substrate, a first electrode disposed on the substrate, a hole layer vertically disposed on an anode, wherein the hole layer includes a sidewall, an electron transport layer disposed on the sidewall, a quantum dot layer disposed on the electron transport layer, and a second electrode disposed on the electron transport layer. A density of the zinc oxide nanowire is high in the present disclosure, causing high light current density, which greatly improves a brightness of light to achieve a purpose of increasing a light-emitting performance of the light-emitting diode device.

First claim

What is claimed is:

1. A quantum dot light-emitting diode device, comprising:
a substrate;
a first electrode disposed on the substrate;
a hole layer vertically disposed on the first electrode, and the hole layer comprising a sidewall;
an electron transport layer disposed on the sidewall;
a quantum dot layer disposed on the electron transport layer; and
a second electrode disposed on the electron transport layer.

2. The quantum dot light-emitting diode device as claimed in claim 1 , wherein the hole layer consists of a carbon nanotube prepared by ion vapor deposition.

3. The quantum dot light-emitting diode device as claimed in claim 2 , wherein a length of the carbon nanotube ranges from 1 um to 5 um; and a diameter of the carbon nanotube ranges from 10 nm to 50 nm.

4. The quantum dot light-emitting diode device as claimed in claim 1 , wherein the quantum dot layer is formed by spin coating, inkjet printing, or electroplating a quantum dot solution, the quantum dot layer comprises at least one quantum dot, and the at least one quantum dot comprises a core and a shell covering the core.

5. The quantum dot light-emitting diode device as claimed in claim 4 , wherein a material of the core is one or more of cadmium sulfide, cadmium selenide, cadmium telluride, lead sulfide, and lead selenide; and a material of the shell is zinc sulfide or zinc selenide.

6. The quantum dot light-emitting diode device as claimed in claim 1 , wherein the electron transport layer comprises at least one zinc oxide nanowire, a length of the zinc oxide nanowire ranges from 1 um to 5 um, a diameter of the zinc oxide nanowire ranges from 10 nm to 80 nm, and a thickness of the second electrode ranges from 100 nm to 200 nm.

Assignees

• Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Wu Yuanchun
• Jiao Shibo
• Zhang Shuren
• Chen Jing
• Wang Lixi
• Pan Jiangyong
• Tu Yan

Classifications

• H10K50/17

  Carrier injection layers · CPC title

• H10K50/15

  Hole transporting layers · CPC title

• H10K50/115 Primary

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/823

  comprising only Group II-VI materials, e.g. ZnO · CPC title