OxRAM oxide based resistive random access memory cell and associated manufacturing method

Patent metadata

Field	Value
Publication number	US-11329224-B2
Application number	US-201916712145-A
Country	US
Kind code	B2
Filing date	Dec 12, 2019
Priority date	Dec 14, 2018
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ΔGf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ΔGf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ΔGf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ΔGf,T0 (M2NO):ΔGf,T0(M3M4O)<ΔGf,T0(M1Oss)≤ΔGf,T0(M2NO)or ΔGf,T0(M3M4NO)<ΔGf,T0(M1Oss)≤ΔGf,T0(M2NO).

First claim

The invention claimed is:

1. An OxRAM oxide based resistive random access memory cell comprising an insulator layer arranged between a first metal layer and a second metal layer, wherein:
the first metal layer is a first electrode;
the insulator layer is a layer M1Oss of a sub-stoichiometric oxide of a first metal M1;
the second metal layer comprises, in this order from the insulator layer:
a first sub-layer M2N of a nitride of a second metal M2;
a second sub-layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O;
a second electrode;

and wherein the first, second, third and fourth metals M1, M2, M3 and M4 are such that the standard free enthalpy of formation of the ternary alloy M3M4O, noted ΔG f,T 0 (M3M4O), or of the quaternary alloy M3M4NO, noted ΔG f,T 0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ΔG f,T 0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ΔG f,T 0 (M2NO):
Δ G f,T 0 ( M 3 M 4O)<Δ G f,T 0 ( M 1 Oss )≤Δ G f,T 0 ( M 2NO)

or Δ G f,T 0 ( M 3 M 4NO)<Δ G f,T 0 ( M 1 Oss )≤Δ G f,T 0 ( M 2NO).

2. The OxRAM oxide based resistive random access memory cell according to claim 1 , further comprising a titanium reservoir layer Ti, intercalated between the insulator layer and the first sub-layer M2N of the nitride of the second metal M2 of the second metal layer.

3. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the fourth metal M 4 has an oxygen solubility less than the oxygen solubility of the third metal M3.

4. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the first, second, third and fourth metals M1, M2, M3 and M4 are selected from transition elements of groups 4, 5 and 6 of the periodic table and the elements silicon Si and aluminium Al; the first and second metals M1 and M2 being identical or distinct and the second and third metals M2 and M3 being identical or distinct but the first, second and third metals M1, M2 and M3 being not all identical; and the third and fourth metals M3 and M4 being distinct.

5. The OxRAM oxide based resistive random access memory cell according to claim 4 , wherein the first, second, third and fourth metals M1, M2, M3 and M4 are selected from the elements hafnium Hf, zirconium Zr, titanium Ti, tantalum Ta, niobium Nb, vanadium V, tungsten W, molybdenum Mo, silicon Si and aluminium Al.

6. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the sub-stoichiometric oxide of the first metal M1 is hafnium dioxide HfO z<2 or zirconium dioxide ZrO z<2 or titanium dioxide TiO z<2 or tantalum pentoxide Ta2O z<5 or vanadium dioxide VO z<2 or vanadium pentoxide V2O z<5 or tungsten oxide WO z<1 or tungsten dioxide WO z<2 or tungsten trioxide WO z<3 or aluminium oxide Al 2 O z<3 or silicon dioxide SiO z<2 .

7. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the nitride of the second metal M 2 is titanium nitride TiN or tantalum nitride TaN or zirconium nitride ZrN or hafnium nitride HfN or tungsten nitride WN or vanadium nitride VN or titanium carbonitride TiCN or tantalum carbonitride TaCN or molybdenum carbonitride MoCN or tungsten carbonitride WCN.

8. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the ternary alloy M3M4O is a ternary alloy of:
titanium Ti, aluminium Al and oxygen O, or
titanium Ti, silicon Si and oxygen O, or
zirconium Zr, aluminium Al and oxygen O, or
zirconium Zr, silicon Si and oxygen O, or
hafnium Hf, aluminium Al and oxygen O, or
hafnium Hf, silicon Si and oxygen O; and wherein the quaternary alloy M3M4NO is a quaternary alloy of:
titanium Ti, aluminium Al, nitrogen N and oxygen O, or
titanium Ti, silicon Si, nitrogen N and oxygen O, or
zirconium Zr, aluminium Al, nitrogen N and oxygen O, or
zirconium Zr, silicon Si, nitrogen N and oxygen O, or
hafnium Hf, aluminium Al, nitrogen N and oxygen O, or
hafnium Hf, silicon Si, nitrogen N, oxygen O.

9. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the second sub-layer of ternary alloy M3M4O or quaternary alloy M3M4NO comprises a proportion of the third metal M3 of (1-x) and a proportion of the fourth metal M4 of x, where x is from 1% to 60%.

10. The OxRAM oxide based resistive random access memory cell according to claim 9 , wherein x is from 5% to 50%.

11. The OxRAM oxide based resistive random access memory cell according to claim 10 , wherein x is from 10% to 40%.

12. The OxRAM oxide based resistive random access memory cell according to claim 11 , wherein x is equal to 30%.

13. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the layer M1Oss of sub-stoichiometric oxide of the first metal has a thickness from 1 nm to 15 nm.

14. The OxRAM oxide based resistive random access memory cell according to claim 13 , wherein the layer M1Oss of sub-stoichiometric oxide of the first metal has a thickness of 10 nm.

15. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the first sub-layer M2N of nitride of the second metal has a thickness from 2 nm to 20 nm.

16. The OxRAM oxide based resistive random access memory cell according to claim 15 , wherein the first sub-layer M2N of nitride of the second metal has a thickness of 5 nm.

17. The OxRAM oxide based resistive random access memory cell according to claim 1 , wherein the second sub-layer of ternary alloy M3M4O or quaternary alloy M3M4NO has a thickness from 1 nm to 50 nm.

18. The OxRAM oxide based resistive random access memory cell according to claim 17 , wherein the second sub-layer of ternary alloy M3M4O or quaternary alloy M3M4NO has a thickness of 20 nm.

19. A method for manufacturing an OxRAM oxide based resistive random access memory cell according to claim 1 , comprising, in this order:
a) depositing a first electrode;
b) depositing a layer M1O of a stoichiometric oxide of a first metal M1;
c) depositing a layer M2N of a nitride of a second metal M2;
d) depositing a layer M3M4 of a binary alloy of a third metal M3 and a fourth metal M4, or M3M4N of a ternary alloy of the third metal M3, the fourth metal M4 and nitrogen N;
e) depositing a second electrode;
the first, second, third and fourth metals M1, M2, M3 and M4 being selected in such a way that the standard free enthalpy of formation of any ternary alloy M3M4O of the third and fourth metals M3, M4 and oxygen O, noted ΔG f,T 0 (M3M4O), or of any quaternary alloy M3M4NO of the third and fourth metals M3, M4, nitrogen N and oxygen O, noted ΔG f,T 0 (M3M4NO), is strictly less than the standard free enthalpy of formation of any sub-stoichiometric oxide M1Oss of the first metal M1, noted ΔG f,T 0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ΔG f,T 0 (M2NO):
Δ G f,T 0 ( M 3 M 4O)<Δ G f,T 0 ( M 1 Oss )≤Δ G f,T 0 ( M 2NO)

or Δ G f,T 0 ( M 3 M 4NO)<Δ G f,T 0 ( M 1 Oss )≤Δ G f,T 0 ( M 2NO).

Assignees

• Commissariat Energie Atomique

Inventors

• Gassilloud Rémy
• Bernard Mathieu
• Charpin-Nicolle Christelle

Classifications

• G11C13/0007 Primary

  comprising metal oxide memory material, e.g. perovskites · CPC title

• G11C2213/50

  Resistive cell structure aspects · CPC title

• H01L45/147 Primary

  Electricity · mapped topic

• H01L45/1608

  Electricity · mapped topic

• H01L45/1253

  Electricity · mapped topic