Photoelectric conversion apparatus, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus

Patent metadata

Field	Value
Publication number	US-11329093-B2
Application number	US-202016840208-A
Country	US
Kind code	B2
Filing date	Apr 3, 2020
Priority date	Jul 11, 2017
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.

First claim

What is claimed is:

1. A photoelectric conversion apparatus comprising:
a semiconductor substrate including a photoelectric conversion portion;
a silicide portion provided on the semiconductor substrate;
a first insulation layer arranged over the semiconductor substrate to cover the silicide portion;
a dielectric region arranged over the photoelectric conversion portion and surrounded by the first insulation layer;
a light shielding film including a portion lying between the first insulation layer and the semiconductor substrate;
a second insulation layer arranged between the first insulation layer and the photoelectric conversion portion, a material of the second insulation layer being different from a material of the first insulation layer;
a third insulation layer extending from a first portion arranged between the second insulation layer and the photoelectric conversion portion to a second portion arranged between the first insulation layer and the silicide portion, a material of the third insulation layer being different from the material of the second insulation layer; and
a fourth insulation layer arranged between the third insulation layer and the silicide portion, a material of the fourth insulation layer being different from the material of the third insulation layer.

2. The photoelectric conversion apparatus according to claim 1 , wherein a part of the second insulation layer is arranged between a bottom of the dielectric region and the third insulation layer.

3. The photoelectric conversion apparatus according to claim 1 ,
wherein the second insulation layer has a first area that is in contact with the dielectric region and a second area that is in contact with the first insulation layer, and
wherein a thickness of the second insulation layer at the first area is less than a thickness of the second insulation layer at the second area.

4. The photoelectric conversion apparatus according to claim 1 , wherein the second portion is arranged between the second insulation layer and the fourth insulation layer.

5. The photoelectric conversion apparatus according to claim 1 , wherein the material of the first insulation layer and the material of the third insulation layer are silicon oxide.

6. The photoelectric conversion apparatus according to claim 1 , further comprising:
an electrode arranged on the semiconductor substrate;
wherein the silicide portion is arranged on the electrode.

7. The photoelectric conversion apparatus according to claim 6 , further comprising:
a sidewall spacer that covers a side of the electrode;
wherein the fourth insulation layer is arranged between the third insulation layer and the sidewall spacer.

8. The photoelectric conversion apparatus according to claim 1 , further comprising:
an impurity region provided inside the semiconductor substrate;
wherein the silicide portion is arranged on the impurity region.

9. The photoelectric conversion apparatus according to claim 1 , wherein a thickness of the second insulation layer is greater than a thickness of the fourth insulation layer.

10. The photoelectric conversion apparatus according to claim 7 , wherein a thickness of the second insulation layer is greater than a thickness of the fourth insulation layer.

11. The photoelectric conversion apparatus according to claim 10 , wherein the material of the first insulation layer and the material of the third insulation layer are silicon oxide.

12. The photoelectric conversion apparatus according to claim 1 , wherein a thickness of a thickest part of the second insulation layer is greater than a thickness of a thickest part of the fourth insulation layer.

13. The photoelectric conversion apparatus according to claim 1 ,
wherein the semiconductor substrate has a charge holding portion, and
wherein the light shielding film covers the charge holding portion.

14. The photoelectric conversion apparatus according to claim 1 , wherein the light shielding film is arranged between the third insulation layer and the semiconductor substrate.

15. The photoelectric conversion apparatus according to claim 1 , further comprising a contact plug being in contact with the silicide portion.

16. The photoelectric conversion apparatus according to claim 15 ,
wherein the semiconductor substrate has a charge holding portion,
wherein the light shielding film covers the charge holding portion,
wherein the contact plug runs through the third insulation layer, and
wherein a distance from an upper surface of the contact plug to an upper surface of the semiconductor substrate is longer than a distance from an upper surface of the light shielding film to the upper surface of the semiconductor substrate.

17. The photoelectric conversion apparatus according to claim 16 , wherein a distance from an upper surface of the third insulation layer to the upper surface of the semiconductor substrate is longer than the distance from the upper surface of the light shielding film to the upper surface of the semiconductor substrate.

18. The photoelectric conversion apparatus according to claim 13 , wherein a distance from an upper surface of the light shielding film to an upper surface of the semiconductor substrate is longer than a distance from an upper surface of the fourth insulation layer to the upper surface of the semiconductor substrate.

19. The photoelectric conversion apparatus according to claim 1 , wherein the material of the second insulation layer and the material of the fourth insulation layer are silicon nitride.

20. An apparatus comprising:
the photoelectric conversion apparatus according to claim 1 ; and
at least one of an optical system configured to form an image on the photoelectric conversion apparatus, a control apparatus configured to control the photoelectric conversion apparatus, a processing apparatus configured to process a signal outputted from the photoelectric conversion apparatus, a mechanical apparatus controlled based on information obtained by the photoelectric conversion apparatus, a display apparatus configured to display information obtained by the photoelectric conversion apparatus, or a storage apparatus configured to store information obtained by the photoelectric conversion apparatus.

21. The photoelectric conversion apparatus according to claim 15 , wherein the contact plug runs through the third insulation layer.

Assignees

• Canon Kk

Inventors

• Kodaira Shinji
• Okabe Takehito
• Yomori Mitsuhiro
• Endo Nobuyuki
• Tezuka Tomoyuki
• Shoyama Toshihiro
• Iwata Jun

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H10F39/8057

  Optical shielding · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/805

  Coatings · CPC title

• H10F39/024

  of coatings or optical elements · CPC title