Nanowires-based transparent conductors

Patent metadata

Field	Value
Publication number	US-11328834-B2
Application number	US-202016747906-A
Country	US
Kind code	B2
Filing date	Jan 21, 2020
Priority date	Aug 12, 2005
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A method of fabricating a transparent conductor is provided. The method includes forming a nanowire dispersion layer on a substrate, forming a nanowire network layer on the substrate by drying the nanowire dispersion layer, and forming a matrix material layer on the nanowire network layer.

First claim

The invention claimed is:

1. A method of fabricating a transparent conductor, comprising:
forming a nanowire dispersion layer on a substrate;
forming a nanowire network layer on the substrate by drying the nanowire dispersion layer;
applying pressure to the nanowire network layer; and
forming a matrix material layer on the nanowire network layer after applying the pressure to the nanowire network layer.

2. The method of claim 1 , wherein applying the pressure to the nanowire network layer changes a cross-sectional shape of one or more nanowires of the nanowire network layer.

3. The method of claim 1 , wherein:
a crossing point is present in the nanowire network layer where a first nanowire of the nanowire network layer crosses a second nanowire of the nanowire network layer, and
applying the pressure to the nanowire network layer causes at least one of the first nanowire or the second nanowire to form a flattened cross-section at the crossing point.

4. The method of claim 1 , comprising:
forming an intermediate layer on a first portion of the substrate prior to forming the nanowire dispersion layer, wherein the intermediate layer is not formed on a second portion of the substrate; and
rinsing the nanowire dispersion layer prior to forming the nanowire network layer, wherein:
rinsing the nanowire dispersion layer removes nanowires of the nanowire dispersion layer formed on the second portion of the substrate, and
nanowires of the nanowire dispersion layer formed on the first portion of the substrate remain on the first portion of the substrate after rinsing the nanowire dispersion layer.

5. The method of claim 4 , wherein the intermediate layer comprises a polypeptide.

6. The method of claim 1 , comprising:
performing a plasma surface treatment on a first portion of the substrate to define a pre-treated region of the substrate, wherein an untreated region of the substrate is defined where the plasma surface treatment is not performed; and
rinsing the nanowire dispersion layer prior to forming the nanowire network layer, wherein:
rinsing the nanowire dispersion layer removes nanowires of the nanowire dispersion layer formed on the untreated region of the substrate, and
nanowires of the nanowire dispersion layer formed on the pre-treated region of the substrate remain on the pre-treated region of the substrate after rinsing the nanowire dispersion layer.

7. The method of claim 1 , comprising:
applying a roller to a surface of the nanowire network layer prior to forming the matrix material layer, wherein:
the roller comprises a tacky portion and a non-tacky portion,
applying the roller to the surface of the nanowire network layer comprises:
removing nanowires of the nanowire network layer that contact the tacky portion of the roller to define a patterned nanowire network layer, and

forming the matrix material layer comprises forming the matrix material layer on the patterned nanowire network layer.

8. The method of claim 1 , comprising:
performing a plasma treatment on the nanowire network layer prior to forming the matrix material layer.

9. The method of claim 8 , wherein the plasma treatment is configured to change at least one of a transparency or a conductivity of the nanowire network layer.

10. The method of claim 1 , wherein applying the pressure comprises:
applying first pressure using a first roller moving in a first direction, and
applying second pressure using a second roller moving in a second direction different than the first direction.

11. The method of claim 1 , comprising:
applying heat at a temperature of 80° C. to 250° C. to the nanowire network layer prior to forming the matrix material layer.

12. The method of claim 11 , wherein applying the heat causes a resistance of the nanowire network layer to decrease from a resistance of more than 1000 Ω/□ to a resistance of less than 400 Ω/□.

13. The method of claim 1 , comprising:
applying heat at a temperature of higher than 250° C. in a non-oxidative atmosphere to the nanowire network layer prior to forming the matrix material layer.

14. The method of claim 1 , comprising:
exposing the nanowire network layer to a reducing agent prior to forming the matrix material layer, wherein the reducing agent comprises at least one of sodium borohydride, dimethyl aminoborane, or hydrogen gas.

15. A method of fabricating a transparent conductor comprising:
forming a nanowire dispersion layer on a substrate;
forming a nanowire network layer on the substrate by drying the nanowire dispersion layer;
forming a matrix material layer on the nanowire network layer;
defining a pattern with a first region and a second region, wherein the nanowire network layer located in the first region forms a conductive region and the nanowire network layer in the second region is partially removed to lower a concentration of nanowires of the nanowire network layer in the second region under a percolation threshold so that the second region is a non-conductive region; and
forming, in the first region, a conductive layer comprising the nanowire network layer embedded in a matrix layer by drying the matrix material layer.

16. The method of claim 15 , wherein the matrix material layer in the second region is totally removed.

17. A method of fabricating a transparent conductor, comprising:
performing a plasma surface treatment on a first portion of a substrate to define a pre-treated region of the substrate, wherein an untreated region of the substrate is defined where the plasma surface treatment is not performed
forming a nanowire dispersion layer on the pre-treated region and the untreated region of the substrate;
rinsing the nanowire dispersion layer, wherein rinsing the nanowire dispersion layer removes nanowires of the nanowire dispersion layer formed on the untreated region of the substrate,
forming a nanowire network layer by drying the nanowire dispersion layer; and
forming a matrix material layer on the nanowire network layer.

18. The method of claim 17 , comprising:
performing a plasma treatment on the nanowire network layer prior to forming the matrix material layer.

19. The method of claim 17 , comprising:
exposing the nanowire network layer to a reducing agent prior to forming the matrix material layer, wherein the reducing agent comprises at least one of sodium borohydride, dimethyl aminoborane, or hydrogen gas.

20. The method of claim 17 , comprising:
applying heat at a temperature of 80° C. or more to the nanowire network layer prior to forming the matrix material layer, wherein the heat decreases a resistance of the nanowire network layer.

Assignees

• Cambrios Film Solutions Corp

Inventors

• Alden Jonathan S
• Dai Haixia
• Knapp Michael R
• Na Shuo
• Pakbaz Hash
• Pschenitzka Florian
• Quan Xina
• Spaid Michael A
• Winoto Adrian
• Wolk Jeffrey

Classifications

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• B22F1/0547

  Nanofibres or nanotubes · CPC title

• H10F77/334

  for shielding light, e.g. light blocking layers or cold shields for infrared detectors · CPC title

• H10F39/8057

  Optical shielding · CPC title