Fluidic die with low voltage monitoring circuit including high voltage tolerant transistor

Patent metadata

Field	Value
Publication number	US-11325370-B2
Application number	US-201816978223-A
Country	US
Kind code	B2
Filing date	May 15, 2018
Priority date	May 15, 2018
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A fluidic die including fluid chambers, each including an electrode exposed to an interior of the fluid chamber and each having a corresponding fluid actuator operating at a first voltage level. Monitoring circuitry, operating at a second voltage level lower than the first voltage level, includes a select transistor and a pulldown transistor for each fluid chamber to selectively couple to the electrode, at least the select transistor being a high voltage tolerant transistor to operate at the second voltage in a normal operating condition and having a breakdown voltage level greater than the first voltage level to prevent a fault current from flowing into the select transistor from the electrode in a fault condition if the fluid actuator short-circuits to the electrode.

First claim

The invention claimed is:

1. A fluidic die comprising:
a plurality of fluid chambers, each including an electrode exposed to an interior of the fluid chamber and each having a corresponding fluid actuator operating at a first voltage level; and
monitoring circuitry, operating at a second voltage level lower than the first voltage level, to monitor a condition of each fluid chamber, for each fluid chamber the monitoring circuitry including:
a select transistor and a pulldown transistor to selectively couple to the electrode, at least the select transistor being a high voltage tolerant transistor to operate at the second voltage in a normal operating condition and having a breakdown voltage level greater than the first voltage level to prevent a fault current from flowing into the select transistor from the electrode in a fault condition if the fluid actuator short-circuits to the electrode.

2. The fluidic die of claim 1 , the monitoring circuitry including sense circuitry, the select transistor to selectively couple the sense circuitry to the electrode and the pulldown transistor to selectively couple the electrode to a reference voltage.

3. The fluidic die of claim 1 , the select transistor sharing one of a drain and a source region with a select transistor corresponding to an adjacent fluid chamber.

4. The fluidic die of claim 1 , the select transistor comprising a high-voltage tolerant drain-extended MOSFET device.

5. The fluidic die of claim 1 , the pulldown transistor comprising a low voltage transistor rated for operating at the second voltage.

6. The fluidic die of claim 1 , the pulldown transistor comprising a high voltage tolerant transistor having a breakdown voltage greater than the first voltage to prevent a fault current from flowing into the pulldown transistor if the high voltage fluid ejector short-circuits to the electrode.

7. The fluidic die of claim 6 , the select transistor and pulldown transistor sharing one of a drain region and a source region which is electrically connected to the electrode.

8. The fluidic die of claim 6 , the pulldown transistor sharing one of a drain region and a source region with a pulldown transistor corresponding to an adjacent fluid chamber.

9. The fluidic die of claim 6 , the pulldown transistor comprising a high-voltage tolerant drain-extended MOSFET device.

10. The fluidic die of claim 6 , the pulldown transistor having a back body diode with an anode connected to one of the source and drain regions and a cathode connected to the other of the source and drain regions, the one of the source and drain regions to which the cathode is connected is electrically connected to the electrode and the other of the source and drain regions is connected to a reference voltage.

11. The fluidic die of claim 10 , the reference voltage comprising ground.

12. The fluidic die of claim 10 , the other of the source and drain regions shared with a pulldown transistor corresponding to an adjacent fluid chamber.

13. A fluidic die comprising:
a fluid chamber including an electrode exposed to an interior of the fluid chamber and having a corresponding fluid actuator operating at a high voltage; and
low-voltage monitoring circuitry including a select transistor and a pulldown transistor to selectively couple to the electrode via a shared drain region connected to the electrode, the select transistor and pulldown transistor each having a breakdown voltage greater than the high voltage to prevent a fault current from flowing into the shared drain region from the electrode if the high voltage fluid actuator short-circuits to the electrode.

14. The fluidic die of claim 13 , the select transistor and pulldown transistor each comprising a high voltage tolerant drain-extended MOSFET.

15. A fluidic die comprising:
a plurality of fluid chambers, each including a cavitation plate and having a corresponding fluid actuator operating at a high voltage; and
monitoring circuitry, operating at a low voltage relative to the fluid actuators, to monitor a condition of each fluid chamber, the monitoring circuitry including:
sense circuitry; and
for each fluid chamber:
a select transistor to selectively couple the electrode to the sense circuitry; and
a pulldown transistor to selective couple the electrode to a reference voltage, the select transistor and pulldown transistor each comprising a high-voltage tolerant MOSFET having a breakdown voltage greater than the high voltage of the fluid actuator.

Assignees

• Hewlett Packard Development Co

Inventors

• Martin Eric
• Przybyla James R
• Cicili Rogelio

Classifications

• H10D89/811

  using FETs as protective elements · CPC title

• B41J2202/18

  Electrical connection established using vias · CPC title

• B41J2/0451 Primary

  for detecting failure, e.g. clogging, malfunctioning actuator · CPC title

• B41J2002/14354

  Sensor in each pressure chamber · CPC title

• B41J2/0458

  controlling heads based on heating elements forming bubbles · CPC title