Ion-doped two-dimensional nanomaterials

Patent metadata

Field	Value
Publication number	US-11325343-B2
Application number	US-201716484024-A
Country	US
Kind code	B2
Filing date	Sep 11, 2017
Priority date	Feb 6, 2017
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.

First claim

What is claimed is:

1. An ion-doped nanomaterial comprising:
a layer of a two-dimensional material;
a layer of captured ions disposed on a surface of the two-dimensional material, wherein the captured ions are positive ions selected from the group consisiting of N 2 30 , N + , O 2 + , and Ar + , and electrons are induced in the two-dimensional nanomaterial, rendering it n-doped, or wherein the captured ions are negative ions selected from the group consisiting of N 2 − , O 2 − , and CO 3 − , and holes are induced in the two-dimensional nanomaterial, rendering it p-doped; and
a capping layer disposed above the captured ion layer;
wherein the capping layer retains at least a portion of the captured ions adjacent to the surface of the two-dimensional material; and
wherein the captured ions stabilize charge carriers in the two-dimensional material.

2. The ion-doped nanomaterial of claim 1 , wherein the two-dimensional material comprises graphene or carbon nanotubes.

3. The ion-doped nanomaterial of claim 1 , wherein the two-dimensional material comprises a material selected from the group consisting of GaS, GaSe, InS, InSe, HfS 2 , HfSe 2 , HfTe 2 , MoS 2 , MoSe 2 , MoTe 2 , NbS 2 , NbSe 2 , NbTe 2 , NiS 2 , NiSe 2 , NiTe 2 , PdS 2 , PdSe 2 , PdTe 2 , PtS 2 , PtSe 2 , PtTe 2 , ReS 2 , ReSe 2 , ReTe 2 , TaS 2 , TaSe 2 , TaTe 2 , TiS 2 , TiSe 2 , TiTe 2 , WS 2 , WSe 2 , WTe 2 , ZrS 2 , ZrSe 2 , and ZrTe 2.

4. The ion-doped nanomaterial of claim 1 , wherein the two-dimensional material has a thickness in the range from one atomic layer to about 10 atomic layers.

5. The ion-doped nanomaterial of claim 1 having a carrier density of at least 1×10 14 cm −2 .

6. The ion-doped nanomaterial of claim 1 , further comprising an insulating or semiconducting substrate upon which the two-dimensional material is deposited, wherein the two-dimensional material contacts the substrate at a surface opposite to the surface on which the captured ions are disposed.

7. The ion-doped nanomaterial of claim 6 , wherein the substrate comprises or consists of silicon, silicon dioxide, a layer of silicon dioxide disposed over a layer of silicon, or an organic polymer.

8. The ion-doped nanomaterial of claim 1 , wherein the capping layer comprises a material selected from the group consisting of polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA), or a photoresist.

9. The ion-doped nanomaterial of claim 1 , wherein the thickness of the capping layer is in the range from about 100 nm to about 100 μm.

10. A p-n junction comprising a p-doped nanomaterial of claim 1 , wherein positive ions are captured and electrons are induced in the two-dimensional nanomaterial, adjacent to an n-doped nanomaterial of claim 1 , wherein negative ions are captured and holes are induced in the two-dimensional nanomaterial, forming a p-n junction between the p-doped and n-doped nanomaterials.

11. An electronic device comprising the ion-doped nanomaterial of claim 1 .

12. The device of claim 11 which is a diode, transistor, field-effect transistor, tunneling field effect transistor, photovoltaic device, light-emitting diode, or solar cell.

Assignees

• Univ Northeastern

Inventors

• Kar Swastik
• Hao Ji
• Rubin Daniel
• Jung Yung Joon

Classifications

• H10D62/123

  comprising junctions · CPC title

• H10D62/121

  oriented parallel to substrates · CPC title

• B32B2255/205

  Metallic coating · CPC title

• B32B2307/202

  Conductive · CPC title

• B32B2307/206

  Insulating · CPC title