Image sensors with phase detection auto-focus pixels

Patent metadata

Field	Value
Publication number	US-11323608-B2
Application number	US-201916597901-A
Country	US
Kind code	B2
Filing date	Oct 10, 2019
Priority date	Jun 25, 2018
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

First claim

What is claimed is:

1. An image sensor pixel array, comprising:
a plurality of image pixels to gather image information; and
a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information,
wherein:
each of the PDAF pixel units is substantially surrounded by the image pixels;
each of the PDAF pixel units includes at least one PDAF pixel, wherein:
the PDAF pixel includes a first photodiode (PD) disposed in a semiconductor substrate and a first micro-lens covers the PDAF pixel;
the image pixel includes a second PD disposed in the semiconductor substrate and it second micro-lens covers the image pixel, wherein:
the first PD is identical to the second PD, and the first micro-lens is identical to the second micro-lens; and
a coating layer disposed on both the first micro-lenses and the second micro-lenses, wherein the coating layer forms a flattened surface across the image sensor pixel array;
a PDAF micro-lens disposed on the coating layer, wherein the PDAF micro-lens covers a PDAF pixel unit;
wherein a refractive index of the coating layer is lower than a refractive index of the first micro-lens and the second micro-lens; and
wherein a refractive index of the PDAF micro-lens is lower than the refractive index of the coating layer.

2. The image sensor pixel array of claim 1 , further comprising:
a first interlayer dielectric layer disposed on the semiconductor substrate;
a color filter array disposed on the first interlayer dielectric layer;
a second interlayer dielectric layer disposed on the color filter array.

3. The image sensor pixel array of claim 2 , wherein a refractive index of the second interlayer dielectric layer is not lower than a refractive index of the first micro-lens and the second micro-lens.

4. The image sensor pixel array of claim 1 , wherein a PDAF pixel unit includes two PDAF pixels adjacent to each other arranged to form a 2×1 pattern.

5. The image sensor pixel array of claim 1 , wherein a PDAF pixel unit includes four PDAF pixels adjacent to each other arranged to form a 2×2 pattern.

6. The image sensor pixel array of claim 4 , wherein the PDAF micro-lens covers both PDAF pixels of the PDAF pixel units.

7. The image sensor pixel array of claim 6 , wherein the PDAF pixels of the PDAF pixel units include green color filters aligned with first micro-lenses of the PDAF pixels.

8. The image sensor pixel array of claim 4 , wherein a left half of the incident light is directed and focused to a first PDAF pixel of the PDAF pixel unit, and a right half of the incident light is directed and focused to a second pixel of the PDAF pixel unit.

9. The image sensor pixel array of claim 1 , further comprising isolation regions between adjacent PDs in the semiconductor substrate.

10. The image sensor pixel array of claim 1 , further comprising isolation regions between adjacent PDs in the semiconductor substrate, except between adjacent PDs of the PDAF pixels.

11. The image sensor pixel array of claim 1 , wherein the PDAF pixel unit includes a single half-shield (HS) PDAF pixel.

12. The image sensor pixel array of claim 11 , wherein the HS PDAF pixel includes a half shield, wherein the half shield blocks a first half of the incident light, and a second half of the incident light passes through a clear filter in the HS PDAF pixel.

13. The image sensor pixel array of claim 12 , wherein the half shield blocks a left half of the incident light, and a right half of the incident light passes through the clear filter in the left half of the HS PDAF pixel.

14. The linage sensor pixel array of claim 12 , wherein the half shield blocks a right half of the incident light, and a left half of the incident light passes through the clear filter in the right half of the HS PDAF pixel.

15. A method for manufacturing an image sensor, comprising:
forming a micro-lens array on an image sensor pixel array, wherein the image sensor pixel array comprising:
a plurality of image pixel units for gathering image information; and
a plurality of phase detection auto-focus (PDAF) pixel units for gathering phase information;
forming a coating layer on the micro-lens array;
flattening a surface of the coating layer across the micro-lens array;
forming a PDAF micro-lens on the coating layer, wherein the PDAF micro-lens covers a PDAF pixel unit;
wherein a refractive index of the coating layer is lower than a refractive index of the micro-lens array; and
wherein a refractive index of the PDAF micro-lens is lower than the refractive index of the coating layer.

Assignees

• Omnivision Tech Inc

Inventors

• Pang Chin Poh
• Lu Chen-Wei
• Kao Shao-Fan
• Ai Chun-Yung
• Qian Yin
• Tai Dyson
• Shan Qingwei
• Grant Lindsay

Classifications

• H04N23/67 Primary

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