Device and method for emitting electromagnetic radiation

Patent metadata

Field	Value
Publication number	US-11322911-B2
Application number	US-202016797522-A
Country	US
Kind code	B2
Filing date	Feb 21, 2020
Priority date	Mar 27, 2019
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

An emitter for emitting electromagnetic radiation includes a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio, wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio.

First claim

What is claimed is:

1. An emitter for emitting electromagnetic radiation, comprising:
a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and
a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio,
wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio, wherein the first region is immediately adjacent to the second region, wherein an upper surface of the first region is coplanar with an upper surface of the second region, and wherein a lower surface of the first region is coplanar with a lower surface of the second region.

2. The emitter of claim 1 , wherein
the second dimension-to-periodicity ratio is smaller than the first dimension-to-periodicity ratio.

3. The emitter of claim 1 , wherein
the first photonic crystal of the first region is in high-doped semiconductor material.

4. The emitter of claim 1 , wherein
the second photonic crystal of the second region is in undoped semiconductor material or low-doped semiconductor material.

5. The emitter of claim 1 , further comprising
a matching region including a third photonic crystal having at least a third periodical structure with third holes of at least one third dimension and being at at least one third periodicity, so as to define at least one third dimension-to-periodicity ratio, respectively,
wherein the at least one third dimension-to-periodicity ratio is different from the second dimension-to-periodicity ratio.

6. The emitter of claim 5 , wherein
the at least one third dimension-to-periodicity ratio is smaller than the second dimension-to-periodicity ratio.

7. The emitter of claim 5 , wherein
the at least one third dimension-to-periodicity ratio is progressively modified in a direction towards a distal region.

8. The emitter of claim 5 , wherein the matching region is immediately adjacent to the second region, wherein an upper surface of the matching region is coplanar with an upper surface of the first region and the second region, and wherein a lower surface of the matching region is coplanar with a lower surface of the first region and the second region.

9. The emitter of claim 1 , further comprising
a mirror region, so that the first region is between the mirror region and the second region.

10. The emitter of claim 9 , wherein
the mirror region includes a fourth photonic crystal of the type having a fourth periodical structure with fourth holes having a fourth dimension and being at a fourth periodicity,
so as to define a fourth dimension-to-periodicity ratio which is smaller than the first dimension-to-periodicity ratio.

11. The emitter of claim 10 , wherein the fourth dimension-to-periodicity ratio is larger than the second dimension-to-periodicity ratio.

12. The emitter of claim 9 , wherein the mirror region is immediately adjacent to the first region, wherein an upper surface of the mirror region is coplanar with an upper surface of the first region and the second region, and wherein a lower surface of the mirror region is coplanar with a lower surface of the first region and the second region.

13. The emitter of claim 10 , wherein the periodical structures of at least two regions have the same periodicity and different dimension of the holes.

14. The emitter of claim 1 , further comprising
a chip structure or a package structure enclosing at least the first region and the second region.

15. A non-dispersive optical gas sensor, comprising:
an emitter configured to emit electromagnetic radiation, the emitter being configured according to claim 1 ;
a guiding region arranged in a gas environment, to irradiate the gas with electromagnetic radiation emitted by the emitter; and
a detector for detecting the electromagnetic radiation, so as to measure a quantity of gas particles on the basis of a detected radiation intensity.

16. A method for emitting electromagnetic radiation, comprising:
generating electromagnetic radiation in a first region including a first photonic crystal having a first periodical structure with first holes a first dimension-to-periodicity ratio; and
filtering the generated electromagnetic radiation in a second region including a second photonic crystal having a second periodical structure with second holes at a second dimension-to-periodicity ratio,
wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio, wherein the first region is immediately adjacent to the second region, wherein an upper surface of the first region is coplanar with an upper surface of the second region, and wherein a lower surface of the first region is coplanar with a lower surface of the second region.

17. A method for detecting the amount of a gas, comprising:
irradiating the gas with electromagnetic radiation using a method according to claim 16 , wherein the emitted electromagnetic radiation is associated to a wavelength of maximum absorption of the gas; and
measuring an intensity of the emitted electromagnetic radiation to determine the amount of the gas.

18. The method of claim 17 , further comprising momentum matching of the emitted electromagnetic radiation using a matching region immediately adjacent to the second region, wherein an upper surface of the matching region is coplanar with an upper surface of the first region and the second region, and wherein a lower surface of the matching region is coplanar with a lower surface of the first region and the second region.

19. The method of claim 16 , further comprising radiation inversion of the emitted electromagnetic radiation using a mirror region immediately adjacent to the first region, wherein an upper surface of the mirror region is coplanar with an upper surface of the first region and the second region, and wherein a lower surface of the mirror region is coplanar with a lower surface of the first region and the second region.

20. A method of manufacturing an emitter configured for emitting electromagnetic radiation, the method comprising:
forming a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and
forming a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio,
wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio, wherein the first region is immediately adjacent to the second region, wherein an upper surface of the first region is coplanar with an upper surface of the second region, and wherein a lower surface of the first region is coplanar with a lower

Assignees

• Infineon Technologies Ag

Inventors

• Abasahl Banafsheh
• Consani Cristina
• Grille Thomas
• Jakoby Bernhard
• Jannesari Reyhaneh
• Tortschanoff Andreas

Classifications

• G01N21/3504 Primary

  for analysing gases, e.g. multi-gas analysis · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• G01N2201/061

  Sources · CPC title

• G01J3/108

  for measurement in the infrared range · CPC title

• G01N29/22

  Details {, e.g. general constructional or apparatus details} · CPC title