Flip-chip light emitting device and production method thereof

Patent metadata

Field	Value
Publication number	US-11322657-B2
Application number	US-202017002423-A
Country	US
Kind code	B2
Filing date	Aug 25, 2020
Priority date	Aug 29, 2019
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

First claim

What is claimed is:

1. A method for producing a flip-chip light emitting device, comprising:
providing an epitaxial light-emitting structure having a top surface and a bottom surface that is opposite to the top surface;
roughening the bottom surface of the light-emitting structure;
forming a transparent bonding layer on the roughened bottom surface of the light-emitting structure;
connecting a transparent substrate to the transparent bonding layer so that the transparent substrate is disposed on the transparent bonding layer opposite to the light-emitting structure;
partially removing the light-emitting structure so as to expose a portion of the transparent bonding layer;
partially reducing a thickness of the exposed portion of the transparent bonding layer, so that the transparent bonding layer has a larger-thickness section bonded to the light-emitting structure, and a smaller-thickness section extending from the larger-thickness section, the smaller-thickness section having a first contact surface that faces away from the transparent substrate, and that is exposed; and
forming a protective insulating layer over the light-emitting structure and the first contact surface of the transparent bonding layer, so that the smaller-thickness section of the transparent bonding layer contacts the protective insulating layer,
wherein the larger-thickness section of the transparent bonding layer has a second contact surface that faces away from the transparent substrate, and that meshes with and is bonded to the roughened bottom surface of the light-emitting structure, the first and second contact surfaces of the transparent bonding layer respectively having first and second roughnesses, the first roughness of the first contact surface being less than the second roughness of the second contact surface, wherein the light-emitting structure includes a first-type electrically conductive layer that has the roughened bottom surface of the light-emitting structure bonded to the second contact surface of the transparent bonding layer, an active layer that is disposed on the first-type electrically conductive layer opposite to the transparent bonding layer, and a second-type electrically conductive layer that is disposed on the active layer opposite to the first-type electrically conductive layer and that has the top surface of the light-emitting structure, the light-emitting structure further having a side wall that interconnects the top and bottom surfaces of the light-emitting structure, the transparent bonding layer further having a lateral wall that interconnects the first and second contact surfaces of the transparent bonding layer, the protective insulating layer being disposed over the top surface and the side wall of the light-emitting structure, and over the first contact surface and the lateral wall of the transparent bonding layer.

2. The method as claimed in claim 1 , wherein, after formation of the protective insulating layer, the protective insulating layer has a roughened lower surface that faces toward the transparent substrate, the first contact surface of the transparent bonding layer meshing with and being bonded to the roughened lower surface of the protective insulating layer.

3. The method as claimed in claim 1 , wherein, after connection of the transparent substrate to the transparent bonding layer, the transparent bonding layer interconnects the transparent substrate and the light-emitting structure.

4. The method as claimed in claim 1 , wherein the transparent bonding layer is formed through deposition and is subsequently subjected to polishing.

5. The method as claimed in claim 1 , wherein the first and second contact surfaces of the transparent bonding layer respectively have first and second maximum heights measured from the transparent substrate, the first maximum height of the first contact surface being lower than the second maximum height of the second contact surface.

6. The method as claimed in claim 1 , wherein the transparent bonding layer has a thickness ranging from 1 μm to 5 μm.

7. The method as claimed in claim 1 , wherein the first contact surface of the transparent bonding layer has a width ranging from 10 μm to 20 μm.

8. The method as claimed in claim 1 , wherein the first roughness of the first contact surface of the transparent bonding layer is not greater than 50 nm.

9. The method as claimed in claim 1 , wherein the second roughness of the second contact surface of the transparent bonding layer is not less than 100 nm and not greater than 500 nm.

Assignees

• Quanzhou Sanan Semiconductor Tech Co Ltd

Inventors

• Xiong Weiping
• Wang Xin
• Wu Zhiwei
• Gao Di
• Wu Chun-I
• Wang Duxiang

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/82 Primary

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/013

  having light-emitting regions comprising only Group III-V materials · CPC title