Photon source and a method of fabricating a photon source

Patent metadata

Field	Value
Publication number	US-11322648-B2
Application number	US-202016923314-A
Country	US
Kind code	B2
Filing date	Jul 8, 2020
Priority date	Oct 14, 2016
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

A method for using a photon source, which includes a semiconductor structure having a first light emitting diode region, a second region including a quantum dot, a first voltage source, and a second voltage source, is provided. The method includes steps of applying an electric field across said first light emitting diode region to cause light emission by spontaneous emission, wherein the light emitted from said first light emitting diode region is absorbed in said second region and produces carriers to populate said quantum dot; and applying a tuneable electric field across said second region to control the emission energy of said quantum dot, wherein the light emitted from the second region exits said photon source.

First claim

The invention claimed is:

1. A method of using a photon source, the photon source comprising a semiconductor structure comprising a first light emitting diode region and a second region comprising a quantum dot; the photon source further comprising a first voltage source configured to apply an electric field across the first light emitting diode region and a second voltage source configured to apply a voltage that causes a tuneable electric field across the second region, the method comprising:
applying the electric field across said first light emitting diode region, by way of the first voltage source, to cause light emission by spontaneous emission, wherein the light emitted from said first light emitting diode region is absorbed in said second region and produces carriers to populate said quantum dot, such that carriers are injected into the quantum dot by optical excitation; and
applying the tuneable electric field across said second region, by way of the second voltage source, to control emission energy of said quantum dot, wherein the voltage applied by the second voltage source is less than a threshold voltage of the second region wherein the light emitted from the second region exits said photon source.

2. The method according to claim 1 , wherein the second region further comprises at least one barrier layer.

3. The method according to claim 2 , wherein the at least one barrier layer comprises an un-doped layer.

4. The method according to claim 3 , wherein the at least one barrier layer has a higher potential, for at least a part of its thickness, than the lowest electron energy level in the quantum dot.

5. The method according to claim 1 , wherein carriers are injected into the quantum dot by optical excitation.

6. The method according to claim 1 , wherein the energy of the light emitted from the first light emitting diode region is greater than the energy of the light emitted from the second region.

7. The method according to claim 6 , wherein features of an absorption spectrum as a function of wavelength of the second region are substantially matched to features of an emission spectrum of the first region.

8. The method according to claim 1 , wherein the second region is arranged at least partly around the first light emitting diode region.

9. The method according to claim 1 , wherein the second region further comprises a plurality of quantum dots, wherein light emitted from said first light emitting diode region produces carriers to populate said quantum dots.

10. The method according to claim 1 , wherein the second voltage source is a DC voltage source.

11. The method according to claim 1 , wherein the first voltage source applies a time varying electric field to the first light emitting diode region.

12. The method according to claim 1 , wherein the electric field is tuned across an operating range having an upper limit of 100 KC cm-1.

13. The method according to claim 12 , wherein a tunnelling time of carriers from said quantum dot is greater than a radiative decay time of an exciton in said quantum dot over said operating range.

14. The method according to claim 1 , wherein the photon source further comprises a waveguide region, wherein the method further comprises:
guiding light emitted from the first light emitting diode region to the second region using the waveguide region.

15. The method according to claim 1 , wherein the first region and second region share an electrical contact region of a first type and each have a separate electrical contact region of a second type.

16. The method according to claim 1 , wherein the light emitted from said first light emitting diode region consists of spontaneous photons that are not amplified by stimulated emission.

17. The method according to claim 2 , wherein the second region further comprising an electrical contact region, wherein the at least one barrier layer is provided between the quantum dot and the electrical contact region.

Assignees

• Toshiba Kk

Inventors

• Ellis David Julian Peter
• Lee James
• Bennett Anthony John
• Shields Andrew James

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H29/10 Primary

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title

• H10H20/8142

  forming resonant cavity structures · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/81

  Bodies · CPC title