Detection apparatus, fabrication method thereof, array substrate, and display apparatus

Patent metadata

Field	Value
Publication number	US-11322624-B2
Application number	US-201816346956-A
Country	US
Kind code	B2
Filing date	Nov 22, 2018
Priority date	Nov 24, 2017
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

The present disclosure is related to a detection apparatus. The detection apparatus may include a gate insulating layer. The gate insulating layer may include at least a first layer and a second layer opposite the first layer. A plurality of protruding structures may be provided on a surface of the first layer facing the second layer and/or a surface of the second layer facing the first layer. The first layer and the second layer of the gate insulating layer may be connected through the protruding structures.

First claim

What is claimed is:

1. A detection apparatus, comprising:
a gate insulating layer comprising at least a first layer and a second layer opposite the first layer,
wherein a plurality of protruding structures are provided on a surface of the first layer facing the second layer or a surface of the second layer facing the first layer, and the first layer and the second layer of the gate insulating layer are connected through the plurality of the protruding structures; and
a plurality of microspheres are provided between the first layer and the second layer of the gate insulating layer, the plurality of the protruding structures form cavities between the first layer and the second layer of the gate insulating layer, and the cavities accommodate the plurality of the microspheres.

2. The detection apparatus according to claim 1 , further comprising
a substrate;
a gate electrode on the substrate;
a semiconductor layer;
a source electrode; and
a drain electrode;
wherein the gate insulating layer is between the semiconductor layer and the gate electrode, and the source electrode and the drain electrode are respectively connected with the semiconductor layer.

3. The detection apparatus according to claim 1 , wherein the plurality of the protruding structures are provided on both the surface of the first layer facing the second layer and the surface of the second layer facing the first layer in the gate insulating layer.

4. The detection apparatus according to claim 2 , wherein a cross section of each of the plurality of the protruding structures in a plane perpendicular to the substrate has a triangular shape.

5. The detection apparatus according to claim 2 , wherein a cross section of each of the plurality of the protruding structures in a plane perpendicular to the substrate is an arc-shaped protruding structure formed between two adjacent arcs.

6. The detection apparatus according to claim 1 , wherein the first layer and the second layer are connected through the plurality of the protruding structures and the plurality of the microspheres.

7. The detection apparatus according to claim 5 , wherein the plurality of the microspheres are provided between the first layer and the second layer of the gate insulating layer, the plurality of the protruding structures provided on both the surface of the first layer facing the second layer and the surface of the second layer facing the first layer in the gate insulating layer form spaces accommodating the plurality of the microspheres.

8. The detection apparatus according to claim 7 , wherein the plurality of the microspheres are made of polystyrene.

9. The detection apparatus according to claim 7 , wherein a height of each of the plurality of the protruding structures is substantially equal to a diameter of each of the plurality of the microspheres.

10. The detection apparatus according to claim 1 , wherein the plurality of the protruding structures are made of an elastic polymer.

11. The detection apparatus according to claim 10 , wherein the elastic polymer is selected from the group consisting of PS, PMMA, PS-P2VP block polymers, and mixtures thereof.

12. An array substrate comprising the detection apparatus according to claim 1 .

13. A display apparatus comprising the array substrate according to claim 12 .

Assignees

• Hefei Xinsheng Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Peng Rui
• Jia Wenbin
• Ye Zhijie
• Hu Yue
• Wan Xiang
• Wang Xinxin
• Wang Yulin

Classifications

• H10D30/031

  of thin-film transistors [TFT] · CPC title

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• H10D30/6739 Primary

  Conductor-insulator-semiconductor electrodes · CPC title

• H10D30/67 Primary

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• H10D30/673

  characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title