Compute in memory system

Patent metadata

Field	Value
Publication number	US-11322195-B2
Application number	US-202017034701-A
Country	US
Kind code	B2
Filing date	Sep 28, 2020
Priority date	Nov 27, 2019
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

A computing device in some examples includes an array of memory cells, such as 8-transistor SRAM cells, in which the read bit-lines are isolated from the nodes storing the memory states such that simultaneous read activation of memory cells sharing a respective read bit-line would not upset the memory state of any of the memory cells. The computing device also includes an output interface having capacitors connected to respective read bit-lines and have capacitance that differ, such as by factors of powers of 2, from each other. The output interface is configured to charge or discharge the capacitors from the respective read bit-lines and to permit the capacitors to share charge with each other to generate an analog output signal, in which the signal from each read bit-line is weighted by the capacitance of the capacitor connected to the read bit-line. The computing device can be used to compute, for example, sum of input weighted by multi-bit weights.

First claim

The invention claimed is:

1. A computing device, comprising:
a memory array comprising a plurality of memory cells grouped in rows and columns of memory cells, each of the memory cells comprising a memory unit adapted to store data, and a read port having an read-enable input and an output;
a plurality of read-enable lines, each connected to, and adapted to transmit an input signal to, the read-enable inputs of the read ports of a respective row of memory cells;
a plurality of data-output lines, each connected to the outputs of the read ports of a respective column of memory cells; and
an output interface comprising:
a computation module comprising a plurality of capacitors, each being connectable to a respective one of the data-output lines and having a capacitance, at least two of the plurality of capacitors having different capacitance from each other, the output interface being configured to permit the plurality of capacitors to share charge stored on plurality of capacitors; and
a compensation module comprising a plurality of capacitors, each being connectable to a respective one of the data-output lines and having a capacitance, the output interface being configurable to, for each of the plurality of data-output lines, connect the respective capacitor in the computation module to the respective capacitor in the compensation module to form a capacitive combination having a total capacitance, the total capacitance of the combinations for at least a subset of the data-output lines being substantially the same.

2. The computing device of claim 1 , further comprising an input interface connected to the plurality of read-enable lines and configured to generate a plurality of pulses on each of at least subset of the plurality of read-enable lines.

3. The computing device of claim 2 , wherein the input interface comprises a plurality of counters, each having a binary data input adapted to receive digital input data and having an output connected to a respective one of the plurality of read-enable lines, the counter being configured to generate a number of pulses, the number being indicative of a value of the digital input.

4. The computing device of claim 1 , further comprising a digital read/write (RW) interface connected to the memory array and adapted to read and write data from and to the memory cells.

5. The computing device of claim 1 , wherein each of the memory cells is an eight-transistor static random-access memory (SRAM) cell having a six-transistor SRAM memory unit having two inverters reverse-coupled to each other and two access transistors, each switchably connecting a respective junction between the two invertors to a respective data line through which data to be written to the six-transistor SRAM memory unit is transmitted, the read port having a first and second transistors, each having a control electrode and a main current path, the control electrode being adapted to control current flow through the current path the main paths being serially connected between the data-output line and a voltage reference point, the control electrode of one of the first transistor being connected to the read-enable line for the memory cell, and the control electrode of one of the first transistor being connected to a junction between the two inverters.

6. The computing device of claim 1 , wherein the plurality of memory cells are substantially identical to each other, and at least two of the plurality of capacitors in the computation module have capacitance differing from each other by a factor of substantially 2 n , where n is an integer.

7. A computing device, comprising:
a memory array comprising a plurality of memory cells grouped in rows and columns of memory cells, each of the memory cells comprising a memory unit adapted to store data, and a read port having an read-enable input and an output;
a plurality of read-enable lines, each connected to, and adapted to transmit an input signal to, the read-enable inputs of the read ports of a respective row of memory cells;
a plurality of data-output lines, each connected to the outputs of the read ports of a respective column of memory cells; and
an output interface comprising:
a computation module comprising a plurality of capacitors, each being connectable to a respective one of the data-output lines and having a capacitance, at least two of the plurality of capacitors having different capacitance from each other, the output interface being configured to permit the plurality of capacitors to share charge stored on plurality of capacitors; and
an analog-to-digital converter (ADC) having a plurality of analog inputs;

wherein each of the plurality of capacitors comprises one or more input capacitors, wherein the plurality of input capacitors are arranged in a linear array, wherein at least one subset of the plurality of input capacitors connectable to one of the data-output lines includes at least a first subset of input capacitors and second subset of input capacitors, each subset connectable to a respective one of the data-output lines, at least two input capacitors in the first subset of the input capacitors being separated by at least one input capacitor in the second subset.

8. The computing device of claim 7 , further comprising an input interface connected to the plurality of read-enable lines and configured to generate a plurality of pulses on each of at least subset of the plurality of read-enable lines.

9. The computing device of claim 8 , wherein the input interface comprises a plurality of counters, each having a binary data input adapted to receive digital input data and having an output connected to a respective one of the plurality of read-enable lines, the counter being configured to generate a number of pulses, the number being indicative of a value of the digital input.

10. The computing device of claim 7 , wherein the output interface further comprising a compensation module comprising a plurality of capacitors, each being connectable to a respective one of the data-output lines and having a capacitance, the output interface being configurable to, for each of the plurality of data-output lines, connect the respective capacitor in the computation module to the respective capacitor in the compensation module to form a capacitive combination having a total capacitance, the total capacitance of the combinations for at least a subset of the data-output lines being substantially the same.

11. The computing device of claim 7 , wherein each of the memory cells is an eight-transistor static random-access memory (SRAM) cell having a six-transistor SRAM memory unit having two inverters reverse-coupled to each other and two access transistors, each switchably connecting a respective junction between the two invertors to a respective data line through which data to be written to the six-transistor SRAM memory unit is transmitted, the read port having a first and second transistors, each having a control electrode and a main current path, the control electrode being adapted to control current flow through the current path the main paths being serially connected between the data-output line and a voltage reference point, the control electrode of one of the first transistor being connected to the read-enable line for the memory cell, and the control electrode of one of the first transistor being connected to a junction between the two inverters.

12. A computing device, comprising:
a memory array comprising a plurality of memory cells grouped in rows and columns of memory cells, each of the memory cells comprising a memory unit adapted to store data, and a read port having an read-enable input and an output;
a plurality of read-e

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Sinangil Mahmut

Classifications

• G11C11/419

  Read-write [R-W] circuits · CPC title

• G11C11/4093

  Input/output [I/O] data interface arrangements, e.g. data buffers · CPC title

• H03M1/361 Primary

  having a separate comparator and reference value for each quantisation level, i.e. full flash converter type · CPC title

• G11C7/1006

  Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor · CPC title

• G11C11/412 Primary

  using field-effect transistors only · CPC title