Display device, method for forming a pattern and method for manufacturing display device

Patent metadata

Field	Value
Publication number	US-11320712-B2
Application number	US-202016905306-A
Country	US
Kind code	B2
Filing date	Jun 18, 2020
Priority date	Oct 30, 2019
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.

First claim

What is claimed is:

1. A method for manufacturing a display device, the method comprising:
forming a doped silicon layer on an amorphous silicon layer;
forming a source metal layer on the doped silicon layer, the source metal layer including a copper-containing layer and a titanium-containing layer on the copper-containing layer;
forming a photoresist pattern on the source metal layer;
wet-etching the source metal layer by applying the photoresist pattern as a mask to form a preliminary source pattern and a data line;
partially removing the photoresist pattern to partially expose an upper surface of the preliminary source pattern and to form a first remaining photoresist pattern;
wet-etching the preliminary source pattern by applying the first remaining photoresist pattern as a mask to form a source electrode and a drain electrode and to partially expose an upper surface of the doped silicon layer;
partially removing the first remaining photoresist pattern to expose an upper tip of a multi-layered source metal pattern including the source electrode, the drain electrode, and the data line and to form a second remaining photoresist pattern; and
dry-etching the multi-layered source metal pattern with an etching gas by applying the second remaining photoresist pattern as a mask to remove the upper tip of the multi-layered source metal pattern, wherein
the dry-etching of the multi-layered source metal pattern includes a first dry-etching followed by a second dry-etching,
the etching gas includes a fluorine-containing compound and a chlorine-containing compound, and
the first dry-etching and the second dry-etching have different flow ratios of the fluorine-containing compound and the chlorine-containing compound.

2. The method of claim 1 , wherein
the fluorine-containing compound includes at least one of SF 6 , NF 3 and CF 4 , and
the chlorine-containing compound includes at least one of Cl 2 and BCl 3 .

3. The method of claim 1 , wherein the etching gas includes SF 6 and Cl 2 .

4. The method of claim 1 , wherein each of the flow ratios of the fluorine-containing compound and the chlorine-containing compound is in a range of about 1:9 to about 3:7.

5. The method of claim 1 , wherein
a flow ratio of the fluorine-containing compound and the chlorine-containing compound is in a range of about 1:9 to about 2:8 when performing the first dry-etching, and
a flow ratio of the fluorine-containing compound and the chlorine-containing compound is in a range of about 2:8 to about 3:7 when performing the second dry-etching.

6. The method of claim 1 , wherein the doped silicon layer is partially removed to expose the amorphous silicon layer when dry-etching the multi-layered source metal pattern.

7. The method of claim 1 , wherein the source metal layer includes an adhesion-improving layer including at least one of titanium, molybdenum and tungsten and disposed below the copper-containing layer.

8. The method of claim 7 , wherein
the multi-layered source metal pattern has a taper angle in a range of about 70° to about 90°,
a thickness of the titanium-containing layer is in a range of about 100 Å to about 300 Å,
a thickness of the copper-containing layer is in a range of about 1,000 Å to about 20,000 Å, and
a thickness of the adhesion-improving layer is in a range of about 50 Å to about 500 Å.

9. The method of claim 1 , wherein
the first dry-etching removes a tip of the titanium-containing layer of the source metal pattern; and
the second dry-etching increases a taper angle of the copper-containing layer of the source metal pattern.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Seon-Il
• Cho Sung Won
• Kim Sang Gab
• Bae Su Bin
• Jeong Yu-Gwang
• Choi Dae Won

Classifications

• G02F1/1368 Primary

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• G02F1/13629 Primary

  Multilayer wirings · CPC title

• G02F2202/28

  Adhesive materials or arrangements · CPC title

• G02F1/1343

  Electrodes {(reflective electrodes G02F1/133553)} · CPC title