Methods and apparatus for modulating light with phase change materials

Patent metadata

Field	Value
Publication number	US-11320647-B2
Application number	US-201916263071-A
Country	US
Kind code	B2
Filing date	Jan 31, 2019
Priority date	Jan 31, 2018
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

Alloys of GeSbSeTe (GSST) can be used to make actively tunable infrared transmission filters that are small, fast, and solid-state. These filters can be used for hyperspectral imaging, 3D LIDAR, portable bio/chem sensing systems, thermal emission control, and tunable filters. GSST is a low-loss phase-change material that can switch from a low-index (n=3), amorphous state to a high-index (n=4.5), hexagonal state with low loss (k<0.3) over a wavelength range of 2-10 microns or more. The GSST thickness can be selected to provide pure phase modulation, pure amplitude modulation, or coupled phase and amplitude modulation. GSST can be switched thermally in an oven, optically with visible light, or electrically via Joule heating at speeds from kilohertz to Gigahertz. It operates with reversible and polarization independent transmission switching over a wide incident angle (e.g., 0-60 degrees).

First claim

The invention claimed is:

1. A spatial light modulator (SLM) comprising:
a resistive layer;
a GeSbSeTe (GSST) element, in thermal communication with the resistive layer, having a refractive index and/or an absorption that varies reversibly with temperature;
a pair of electrodes, in electrical communication with the resistive layer, to apply a current pulse to the resistive layer, the current pulse causing the resistive layer to heat the GSST element
a silicon substrate;
a first silicon dioxide layer disposed on the silicon substrate, the resistive layer disposed on the first silicon dioxide layer;
a second silicon dioxide layer disposed on the resistive layer, the GSST element disposed on the second silicon dioxide layer; and
a magnesium fluoride layer disposed on the GSST element.

2. The SLM of claim 1 , wherein the GSST element has a thickness selected to produce a change in refractive index in response to heating by the resistive layer.

3. The SLM of claim 1 , wherein the GSST element has a thickness selected to produce a change in absorption in response to heating by the resistive layer.

4. The SLM of claim 1 , wherein the GSST element changes at least partially from a crystalline state to an amorphous state in response to heating by the resistive layer.

5. The SLM of claim 1 , wherein the GSST element is a first GSST element in an array of GSST elements, each of which is in thermal communication with a corresponding portion of the resistive layer.

6. The SLM of claim 5 , wherein the resistive layer is patterned to thermally isolate the corresponding portions of the resistive layer.

7. The SLM of claim 5 , wherein the first GSST element has a first thickness and the array of GSST elements comprises a second GSST element having a second thickness different than the first thickness.

8. The SLM of claim 1 , further comprising:
a transistor, in electrical communication with one electrode in the pair of electrodes, to provide the current pulse to the pair of electrodes.

9. The SLM of claim 1 , further comprising:
a focal plane array, in optical communication with the GSST element, to detect light modulated by the GSST element; and
a controller, operably coupled to the focal plane array, to modulate the current pulse based on the light detected by the focal plane array.

10. The SLM of claim 9 , wherein the controller is configured to modulate the current pulse at a rate of at least 1 kHz and the GSST element is configured to produce a phase shift of up to about λ/10, where λ is a wavelength of light incident on the GSST element.

11. A method of spatially modulating infrared light with a spatial light modulator (SLM) comprising:
a resistive element in thermal communication with a GeSbSeTe (GSST) element having a refractive index and/or an absorption that varies reversibly with temperature; and
a pair of electrodes in electrical communication with the resistive layer;
a silicon substrate;
a first silicon dioxide layer disposed on the silicon substrate, the resistive element disposed on the first silicon dioxide layer;
a second silicon dioxide layer disposed on the resistive element, the GSST element disposed on the second silicon dioxide layer; and
a magnesium fluoride layer disposed on the GSST element, the method comprising:
applying a current pulse with the pair of electrodes to the resistive element so as to heat the GSST element with the resistive element, thereby changing a refractive index and/or an absorption of the GSST element; and
transmitting the infrared light through the GSST element, thereby changing a phase and/or an intensity of the infrared light.

12. The method of claim 11 , wherein applying the current pulse causes the GSST element to transition between an amorphous state and a crystalline state.

13. The SLM of claim 1 , wherein the GSST element is Ge 2 Sb 2 Se 4 Te.

14. The SLM of claim 1 , wherein the resistive layer comprises at least one of tungsten, titanium, or platinum.

15. The SLM of claim 14 , wherein the resistive layer comprises tungsten.

16. The SLM of claim 14 , wherein the resistive layer comprises tungsten and platinum.

17. The SLM of claim 1 ,
wherein the magnesium fluoride layer has a thickness of about 20 nm to about 85 nm.

18. The SLM of claim 17 , wherein the magnesium fluoride layer has a thickness of about 20 nm.

19. The SLM of claim 1 , wherein the GSST element has a thickness of about 5 nm to about 200 nm.

20. The SLM of claim 1 , wherein the GSST element is a first GSST element with a refractive index that varies reversibly with temperature, and further comprising:
a second GSST element in optical communication with the first GSST element and having an absorption that varies reversibly with temperature.

Assignees

• Massachusetts Inst Technology

Inventors

• Chou Jeffrey
• Liberman Vladimir
• Hu Juejun
• Zhang Yifei
• Herzog William
• Stewart Jason
• Roberts Christopher

Classifications

• G02F2203/06

  Polarisation independent · CPC title

• G02F2203/18

  adaptive optics, e.g. wavefront correction · CPC title

• G02F2201/17

  Multi-pass arrangements, i.e. arrangements to pass light a plurality of times through the same element, e.g. by using an enhancement cavity · CPC title

• G02F1/0054

  Structure, phase transitions, NMR, ESR, Moessbauer spectra · CPC title

• G02F2203/11

  involving infrared radiation · CPC title