Photonics fabrication process performance improvement

Patent metadata

Field	Value
Publication number	US-11320585-B2
Application number	US-202016994226-A
Country	US
Kind code	B2
Filing date	Aug 14, 2020
Priority date	Apr 17, 2018
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m·K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

First claim

What is claimed is:

1. An article of manufacture, comprising:
one or more waveguide structures formed in at least one silicon layer of a first member, the first member including:
a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m·K); and
a second surface of material that was deposited over at least some of the waveguide structures; and

an array of phase shifters formed in one or more layers of the first member;
wherein the array of phase shifters is configured to emit a beam formed by interference of optical waves emitted from the phase shifters through an aperture that provides a transmissive pathway that does not include obstructive material within a distance of twice a beam radius from a propagation axis of the beam, wherein most of the transmissive pathway is through the second member.

2. The article of manufacture of claim 1 , wherein the first member comprises a wafer, and the second member comprises a wafer.

3. A photonic integrated circuit, comprising:
one or more waveguide structures formed in at least one silicon layer of a first member that includes:
a first surface of a first silicon dioxide layer that is attached to a portion of a second member that consists essentially of silicon dioxide; and
a second surface of material that was deposited over at least some of the waveguide structures;

a laser module at least partially embedded within a portion of the first member;
an array of phase shifters formed in one or more layers of the first member; and
an array of heater elements in proximity to the array of phase shifters;
wherein the array of phase shifters is configured to emit a beam formed by interference of optical waves emitted from the phase shifters through at least a portion of the second member.

4. The photonic integrated circuit of claim 3 , wherein the heater elements are configured to reduce a thermal gradient in proximity to the phase shifters.

5. The article of manufacture of claim 1 , wherein the second member comprises one or more of silicon dioxide, plastic, quartz, or sapphire.

6. The article of manufacture of claim 1 , wherein an index of refraction of the optically transmissive material has a low index contrast with the first silicon dioxide layer through which the beam is emitted.

7. The article of manufacture of claim 1 , wherein the transmissive pathway does not include metal within a distance of twice a beam radius from a propagation axis of the beam.

8. The article of manufacture of claim 2 , wherein the wafer of the first member and the wafer of the second member are direct bonded to each other without any intermediate layer of material between the first surface of the first silicon dioxide layer and a surface of the second member.

9. The photonic integrated circuit of claim 3 , further comprising a flip chip connected die connected to conductive contacts of the photonic integrated circuit.

10. The photonic integrated circuit of claim 9 , further comprising a heat sink is-thermally coupled to the flip chip connected die.

11. The photonic integrated circuit of claim 3 , further comprising a package in which the photonic integrated circuit is secured and that includes an opening through which the beam is emitted.

12. The photonic integrated circuit of claim 3 , wherein the heater elements are formed in at least one layer of the first member, and the heater elements are configured to provide a thermal profile across the array of phase shifters to at least partially cancel out effects of thermal crosstalk among phase shifters of the array of phase shifters.

Assignees

• Analog Photonics LLC

Inventors

• Watts Michael Robert
• Moss Benjamin Roy
• Hosseini Ehsan Shah
• Poulton Christopher Vincent
• Russo Peter Nicholas

Classifications

• H10W90/722

  between stacked chips · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/072

  of bump connectors · CPC title