Display panel with packaging layer in a notch of non-display area and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11316129-B2
Application number	US-201916618367-A
Country	US
Kind code	B2
Filing date	Aug 7, 2019
Priority date	Jul 3, 2019
Publication date	Apr 26, 2022
Grant date	Apr 26, 2022

Abstract

The present invention provides a display panel and a manufacturing method thereof. The display panel includes a display area, a non-display area surrounding the display area, and an array substrate disposed in the display area and the non-display area; the array substrate includes a notch disposed in the non-display area of the array substrate and surrounding the display area to form a circle; and a packaging layer filled in the notch, and a material of the packaging layer is silicon nitride.

First claim

What is claimed is:

1. A display panel, comprising a display area, a non-display area surrounding the display area, and an array substrate disposed in the display area and the non-display area;
wherein the array substrate comprises:
a substrate;
a gate layer disposed on the substrate;
a first insulating layer disposed on the substrate and covering the gate layer;
a second insulating layer disposed on the first insulating layer;
a first metal layer disposed on the second insulating layer;
a source and drain electrode disposed on the second insulating layer and electrically connected to the first metal layer;
a first encapsulation layer disposed on the second insulating layer and covering the source and drain electrode and the first metal layer;
a second encapsulation layer disposed on the first encapsulation layer;
a notch defined in the non-display area of the array substrate, surrounding the display area to form a circle, and penetrating from the second encapsulation layer to the first insulating layer; and
a packaging layer filled in the notch, wherein a material of the packaging layer is silicon nitride.

2. The display panel according to claim 1 , wherein
the array substrate further comprises:
a light-emitting layer disposed on the second encapsulation layer and electrically connected to the source and drain electrode through the first encapsulation layer and the second encapsulation layer.

3. The display panel according to claim 1 , further comprising
a second metal layer disposed on the substrate and having a same height as the gate layer; wherein the second metal layer corresponds to the notch.

4. The display panel according to claim 1 , wherein
a material of the first insulating layer is silicon nitride;
a material of the second insulating layer is silicon oxide.

5. The display panel according to claim 1 , wherein
a material of the first encapsulation layer is silicon oxide;
a material of the second encapsulation layer is silicon oxynitride.

6. The display panel according to claim 1 , further comprising:
a color filter substrate disposed opposite to the array substrate;
a sealing structure sealed between the color filter substrate and the array substrate, and corresponding to the notch.

7. A manufacturing method of a display panel, comprising following steps:
providing an array substrate comprising a display area and a non-display area surrounding the display area;
wherein manufacturing steps of the array substrate comprises:
S1) providing a substrate;
S2) forming a gate layer on the substrate, wherein the gate layer is disposed in the display area;
S3) depositing a first insulating layer on the gate layer, wherein the first insulating layer covers the gate layer;
S4) forming a second insulating layer on the first insulating layer;
S5) forming a first metal layer on the second insulating layer, wherein the first metal layer corresponds to the gate layer;
S6) forming a source and drain electrode on the second insulating layer, wherein the source and drain electrode is disposed on both sides of the first metal layer and electrically connected to the first metal layer;
S7) forming a first encapsulation layer on the second insulating layer, and the first encapsulation layer covering the source and drain electrode and the first metal layer; and
S8) forming a second encapsulation layer on the first encapsulation layer;
making a notch on the second encapsulation layer in the non-display area of the array substrate, wherein the notch surrounds the display area to form a circle and penetrates from the second encapsulation layer to the first insulating layer;
coating a photoresist on an opening side of the notch of the array substrate to form a photoresist layer;
coating a layer of silicon nitride on the photoresist layer, wherein the silicon nitride fills the notch; and
developing to remove the photoresist layer and the layer of silicon nitride on the photoresist layer; wherein remaining silicon nitride in the notch forms a packaging layer.

8. The manufacturing method of the display panel according to claim 7 , wherein the step S2 further comprises following steps:
forming a second metal layer in the non-display area of the substrate, wherein the second metal layer has a same height as the gate layer.

9. The manufacturing method of the display panel according to claim 7 , wherein a temperature is less than 200° C. during a silicon nitride coating process.

10. The manufacturing method of the display panel according to claim 7 , further comprising:
providing a color filter substrate;
forming a sealing structure corresponding to the notch, wherein the sealing structure is sealingly connected to the color filter substrate and the array substrate.

Assignees

• Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Liu Xiaowei

Classifications

• H10K59/873

  Encapsulations · CPC title

• H10K59/87

  Passivation; Containers; Encapsulations · CPC title

• H10K50/844

  Encapsulations · CPC title

• H10D86/451 Primary

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title