Light-emitting device and electronic device using the same
US-2024128272-A1 · Apr 18, 2024 · US
US11309528B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11309528-B2 |
| Application number | US-201916769374-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 8, 2019 |
| Priority date | Mar 28, 2019 |
| Publication date | Apr 19, 2022 |
| Grant date | Apr 19, 2022 |
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The present disclosure relates to a method of fabricating a flexible display panel. The method of fabricating the flexible display panel may include forming a photosensitive layer comprising at least one azo group on a carrier substrate; forming a flexible substrate on the photosensitive layer; irradiating the photosensitive layer with ultraviolet light; and peeling off the flexible substrate from the carrier substrate.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a flexible display panel, comprising: forming a photosensitive layer comprising at least one azo group on a carrier substrate; forming a flexible substrate on the photosensitive layer; forming a barrier layer and a display device sequentially on the flexible substrate; irradiating the photosensitive layer with ultraviolet light; and peeling off the flexible substrate from the carrier substrate; wherein the flexible substrate is directly formed on the photosensitive layer; the barrier layer is formed between the flexible substrate layer and the display device; and the photosensitive layer comprising the at least one azo group further comprises a phenyl group, the phenyl group further comprises a derivative group, and the derivative group comprises an alkyl group or an aromatic heterocyclic group. 2. The method according to claim 1 , wherein peeling off the flexible substrate from the carrier substrate comprises peeling off the flexible substrate, the barrier layer and the display device from the carrier substrate. 3. The method according to claim 2 , wherein the photosensitive layer comprising at least one azo group is changed from a trans state to a cis state during irradiation with the ultraviolet light. 4. The method according to claim 1 , wherein irradiating the photosensitive layer with ultraviolet light comprises: irradiating the carrier substrate from a side of the carrier substrate opposite from the photosensitive layer with the ultraviolet light. 5. The method according to claim 1 , wherein the ultraviolet light has a wavelength in a range from about 200 nm to about 400 nm. 6. The method according to claim 1 , wherein the photosensitive layer comprising at least one azo group is irradiated with the ultraviolet light for a time in a range from about 1 min to about 30 mins. 7. The method according to claim 1 , wherein peeling off the flexible substrate from the carrier substrate comprises: peeling off the flexible substrate from the carrier substrate by mechanical or physical adsorption. 8. The method according to claim 1 , wherein the photosensitive layer comprising at least one azo group has a thickness in a range of from about 10 μm to about 1000 μm. 9. The method according to claim 1 , wherein the photosensitive layer comprising at least one azo group is formed on the carrier substrate by a method of dip coating, spray coating, spin coating or pulling or curtain coating. 10. The method according to claim 1 , wherein the carrier substrate comprises a glass, a silicon wafer, or a mica sheet. 11. The method according to claim 1 , wherein the flexible substrate comprises a polymer, a metal foil or a glass, and the polymer is one or a combination of polyimide, polystyrene, polycarbonate, polyacrylate, polyetherimide, polyethersulfone, polyethylene terephthalate, polyethylene naphthalate or a transparent conductive polyester. 12. The method according to claim 1 , wherein the barrier layer comprises SiOx, SiNx, SiON, or a combination thereof. 13. The method according to claim 1 , wherein the display device comprises a thin film transistor driving element, a basic driving circuit, a light emitting unit, and an encapsulation layer.
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