Contact passivation for perovskite optoelectronics

Patent metadata

Field	Value
Publication number	US-11309138-B2
Application number	US-201815883992-A
Country	US
Kind code	B2
Filing date	Jan 30, 2018
Priority date	Jan 30, 2017
Publication date	Apr 19, 2022
Grant date	Apr 19, 2022

Abstract

Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.

First claim

Therefore what is claimed is:

1. A perovskite-based optoelectronic device, comprising:
a) an optically transparent electrode;
b) a semiconductor electron transport layer on said optically transparent electrode;
c) a light-absorbing perovskite layer formed on said semiconductor electron transport layer;
d) the electron transport layer having a surface located at an interface or junction between the semiconductor electron transport layer and the light-absorbing perovskite layer at least partially capped with a ligand Z, wherein said ligand Z is selected to passivate surface states at said interface or junction between the semiconductor electron transport layer and the light-absorbing perovskite layer; and
e) a hole transport layer on said light-absorbing perovskite layer, and including an electrode layer located on said hole transport layer.

2. The perovskite-based optoelectronic device according to claim 1 , wherein the ligand Z is any one of a halide, a pseudo halide, a monovalent ammonium cation, and any combination thereof.

3. The perovskite-based optoelectronic device according to claim 2 , wherein the halide is any one of Cl, Br, I, F, and any combination thereof.

4. The perovskite-based optoelectronic device according to claim 2 , wherein the pseudo halide is a polyatomic analogue of halide ions.

5. The perovskite-based optoelectronic device according to claim 4 wherein the pseudo halide is any one of cyanide (CN), thiocyanate (SCN), cyanate (OCN), and any combination thereof.

6. The perovskite-based optoelectronic device according to claim 2 , wherein the monovalent ammonium cation is any one of positively charged polyatomic ions with the chemical formula of R1R2R3R4N+; where R1, R2, R3, R4 are selected from a group consisting of hydrogen, and compounds derived from linear alkanes, branched alkanes, cycloalkanes, (poly)cycloalkanes, cis- and trans-linear alkenes, cis- and transbranched alkenes, linear alkynes, branched alkynes, (poly)alkynes, aromatic hydrocarbons, (poly)aromatic hydrocarbons, heteroarenes, (poly)heteroarenes, thiophenes, (poly)thiophenes, (poly)anilines, and combination of above mentioned elements.

7. The perovskite-based optoelectronic device according to claim 1 , wherein the semiconductor electron transport layer is any one of doped or undoped TiO 2 , SnO 2 , Al 2 O 3 , Ga 2 O 3 , ZnO, Zn 2 SnO 4 , BaSnO 3 , BaTiO 3 , Nb 2 O 5 , Ta 2 O 5 and ZrO 2 .

8. The perovskite-based optoelectronic device according to claim 7 , wherein said the semiconductor electron transport layer is planar or mesoporous.

9. The perovskite-based optoelectronic device according to claim 7 , wherein said semiconductor electron transport layer comprises a single layer or multilayers.

10. The perovskite-based optoelectronic device according to claim 1 , wherein said optically transparent electrode is any one of indium doped tin oxide (ITO, In2O3:SnO2), fluorine doped tin oxide (FTO, SnO 2 :F), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), boron-doped zinc oxide (BZO), indium-doped zinc oxide (IZO).

11. The perovskite-based optoelectronic device according to claim 1 , wherein said optically transparent electrode is a film comprised of any one of silver nanowires, silver nanoparticles, carbon black, carbon nanotube, carbon nanowire, graphene, reduced graphene oxide and ultrathin graphite.

12. The perovskite-based optoelectronic device according to claim 1 , wherein said hole transport layer is any one of an organic hole transport material and an inorganic hole transport material.

13. The perovskite-based optoelectronic device according to claim 12 wherein said inorganic hole transport material is any one of doped or undoped NiOx, WOx, MoOx, CuSCN, V 2 O 5 , MoS 2 , CuGaO 2 , PbS and any combination thereof.

14. The perovskite-based optoelectronic device according to claim 12 wherein said organic hole transport material is any one of doped or undoped Spiro-OMeTAD (N2,N2,N2′,N2′,N7,N7,N7′,N7′-octakis(4-methoxyphenyl)-9,9′-spirobi[9Hfluorene]-2,2′,7,7′-tetramine), PTAA (Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], P3HT (Poly(3-hexylthiophene-2,5-diyl)), Poly-TPD (Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine) and PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate).

15. The perovskite-based optoelectronic device according to claim 1 , wherein the perovskite has a general formula of ABX3, where
A is a monovalent cation or ion combination, wherein the monovalent cation is K+, Rb+, Cs+, or any of organic monovalent cations with the general formula of R1R2R3R4N+; where R is selected from a group consisting of hydrogen, and compounds derived from linear alkanes, branched alkanes, cycloalkanes, (poly)cycloalkanes, cis and trans-linear alkenes, cis- and trans-branched alkenes, linear alkynes, branched alkynes, (poly)alkynes, aromatic hydrocarbons, (poly)aromatic hydrocarbons, heteroarenes, (poly)heteroarenes, thiophenes, (poly)thiophenes, (poly)anilines;
B is a divalent metal ion or ion combination, wherein the divalent cation is any of Pb 2+ , Sn 2+ , Cu 2+ , Ge 2+ , Zn 2+ , Ni 2+ , Fe 2+ , Mn 2+ , Eu 2+ , and Co 2+ ; and any combination thereof; and
X is any one of a halide, a pseudo halide, and any combination thereof.

16. The perovskite-based optoelectronic device according to claim 15 wherein the halide is any one or combination of Cl−, Br−, I− and F.

17. The perovskite-based optoelectronic device according to claim 15 wherein the pseudo halide is any one or combination of cyanide (CN), thiocyanate (SCN) and cyanate (OCN).

18. The perovskite-based optoelectronic device according to claim 1 , wherein said semiconductor electron transport layer having the surface located at the interface or junction between the electron transport layer and the light-absorbing perovskite layer is fully capped by said ligand Z.

19. The perovskite-based optoelectronic device according to claim 1 , wherein said semiconductor electron transport layer is formed from TiO2 nanocrystals, wherein said ligand is Cl−, and wherein said perovskite is MA0.15FA0.85PbI2.55Br0.45, wherein MA is methylammonium cation and FA is formamidinium cation.

20. The perovskite-based optoelectronic device according to claim 1 , wherein said electron transport layer has a thickness in a range from about 5 nm to about 300 nm, and wherein said hole transport layer has a thickness in a range from about 10 nm to about 300 nm, and wherein said light absorbing perovskite layer a thickness in a range from about 20 nm to about 2000 nm.

Assignees

• Governing Council Univ Toronto

Inventors

• Tan Hairen
• Lan Xinzheng
• Yang Zhenyu
• Hoogland Sjoerd
• Sargent Edward

Classifications

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• Y02E10/542

  Dye sensitized solar cells · CPC title

• H10K71/15 Primary

  characterised by the solvent used · CPC title

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title