Method for preparing CsPbX3 perovskite quantum dot film by one-step crystallization

Patent metadata

Field	Value
Publication number	US-11306245-B2
Application number	US-202016747733-A
Country	US
Kind code	B2
Filing date	Jan 21, 2020
Priority date	Oct 9, 2019
Publication date	Apr 19, 2022
Grant date	Apr 19, 2022

Abstract

The present disclosure provides a method for preparing a perovskite quantum dot film by one-step crystallization, and belongs to the field of perovskite quantum dot material technology. The present disclosure uses adamantanemethylamine and hydrohalic acid as ligands, first mixes a cesium halide, a lead halide, and the ligands with a solvent to obtain a precursor solution, then deposits the precursor solution on a substrate, and then heats the substrate to obtain the CsPbX3 perovskite quantum dot film. The present disclosure uses adamantanemethylamine and hydrohalic acid as the ligands, which can quickly coat the perovskite, complex with the CsPbX3 perovskite, and directly form the perovskite quantum dot via a strong steric effect. Further, the present disclosure is simple and inexpensive, can directly obtain a high-quality perovskite quantum dot film with a thickness of more than 500 nm by one-step crystallization.

First claim

What is claimed is:

1. A method for preparing a CsPbX 3 perovskite quantum dot film by one-step crystallization, comprising:
(1) mixing a cesium halide, a lead halide, and a ligand with a solvent to obtain a precursor solution;
(2) depositing the precursor solution on a substrate, and then heating the substrate to obtain the CsPbX 3 perovskite quantum dot film;
X in the CsPbX 3 being one or more of Cl, Br, or I; and
the ligand being adamantanemethylamine and hydrohalic acid.

2. The method according to claim 1 , wherein a molar ratio of adamantanemethylamine to hydrohalic acid in the ligand is 1:2-2:1.

3. The method according to claim 1 , wherein the solvent in step (1) is one or more of N, N-dimethyl formamide, dimethyl sulfoxide, γ-butyrolactone, or N, N-dimethyl acetamide.

4. The method according to claim 1 , wherein a molar ratio of the cesium halide to the lead halide to the ligand to the solvent in step (1) is (0.1-2) mol:(0.1-2) mol:(0.1-2) mol:1 mL.

5. The method according to claim 1 , wherein the depositing approach in step (2) is spin coating, drop coating, scrape coating, spray coating, or printing.

6. The method according to claim 5 , wherein when the depositing approach is the spin coating, the spin coating comprises a first stage and a second stage in sequence, the spin coating in the first stage is at a rate of 1000 rpm for a duration of 10 s, and at an acceleration of 500 rpm·s −1 from rest to reaching the spin coating rate; and the spin coating in the second stage is at a rate of 2000 rpm for a duration of 20 s, and at an acceleration of 1000 rpm·s −1 from the spin coating rate in the first stage to reaching the spin coating rate in the second stage.

7. The method according to claim 1 , wherein the heating in step (2) is at a temperature of 60° C.-180° C. for a duration of 1-30 min.

Assignees

• Univ North China Electric Power

Inventors

• Ding Yong
• Liu Cheng
• Dai Songyuan
• Yang Yi
• Liu Xuepeng
• Cai Molang

Classifications

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B05D1/005

  Spin coating · CPC title

• C01P2002/82

  by IR- or Raman-data · CPC title