Method of manufacturing semiconductor device, substrate processing apparatus and program

Patent metadata

Field	Value
Publication number	US-11305986-B2
Application number	US-202016797322-A
Country	US
Kind code	B2
Filing date	Feb 21, 2020
Priority date	Feb 21, 2019
Publication date	Apr 19, 2022
Grant date	Apr 19, 2022

Abstract

There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device having a vibratable insulating film, the method comprising at least:
forming a first silicon oxide film;
forming a first silicon nitride film;
forming a second silicon oxide film; and
forming a second silicon nitride film,

as a formation of the insulating film,
the formation of the second silicon oxide film comprising:
supplying silicon-containing gas and oxygen-containing gas to a process chamber, and performing switching to supply low frequency power to a top electrode installed in the process chamber, and supply high frequency power to a bottom electrode installed in the process chamber, and
the formation of the second silicon nitride film comprising:
supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode.

2. The method according to claim 1 ,
wherein the formation of the first silicon oxide film comprises:
supplying silicon-containing gas and oxygen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode, and
the formation of the first silicon nitride film comprises:
supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.

3. The method according to claim 2 , wherein the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times.

4. The method according to claim 3 , comprising:
forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film,
the formation of the third silicon nitride film comprising:
supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.

5. The method according to claim 4 , wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different.

6. The method according to claim 5 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole.

7. The method according to claim 4 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole.

8. The method according to claim 3 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole.

9. The method according to claim 2 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.

10. The method according to claim 1 , wherein the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times.

11. The method according to claim 10 , comprising:
forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film,
the formation of the third silicon nitride film comprising:
supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.

12. The method according to claim 11 , wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different.

13. The method according to claim 11 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.

14. The method according to claim 10 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.

15. The method according to claim 1 , comprising:
forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film,
the formation of the third silicon nitride film comprising:
supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.

16. The method according to claim 15 , wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different.

17. The method according to claim 15 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.

18. The method according to claim 1 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.

19. A substrate processing apparatus, comprising:
a process chamber that houses a workpiece;
a first gas supplier that supplies silicon-containing gas to the process chamber;
a second gas supplier that supplies oxygen-containing gas to the process chamber;
a third gas supplier that supplies nitrogen-containing gas to the process chamber;
a top electrode and a bottom electrode disposed in the process chamber;
a high frequency power supplier that supplies high frequency power to the top electrode or the bottom electr

Assignees

• Kokusai Electric Corp

Inventors

• Yahata Takashi
• Ohashi Naofumi
• Takasaki Tadashi

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title