Negative electrode material comprising silicon flakes and preparing method of silicon flakes

US11302913B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11302913-B2
Application numberUS-201716082021-A
CountryUS
Kind codeB2
Filing dateAug 18, 2017
Priority dateAug 18, 2016
Publication dateApr 12, 2022
Grant dateApr 12, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure relates to a negative electrode material including, as an active material, silicon flakes with a hyperporous structure, represented by the following chemical formula 1:xSi.(1−x)A  (1)where 0.5≤x≤1.0, andA is an impurity, and includes at least one compound selected from the group consisting of Al2O3, MgO, SiO2, GeO2, Fe2O3, CaO, TiO2, Na2O K2O, CuO, ZnO, NiO, Zr2O3, Cr2O3 and BaO, and a preparing method of the silicon flakes.

First claim

Opening claim text (preview).

What is claimed is: 1. A negative electrode material comprising, as an active material, silicon flakes with a hyperporous structure, represented by the following chemical formula 1: x Si.(1 −x )A  (1) where 0.5≤x≤1.0, and A is an impurity, and includes at least one compound selected from the group consisting of Al 2 O 3 , MgO, SiO 2 , GeO 2 , Fe 2 O 3 , CaO, TiO 2 , Na 2 O, K 2 O, CuO, ZnO, NiO, Zr 2 O 3 , Cr 2 O 3 and BaO, wherein the silicon flakes have a BET surface area of 120 m 2 /g to 250 m 2 /g, wherein the silicon flakes have a hyperporous structure including macropores having a pore size in the range of greater than 50 nm to 500 nm, mesopores having a pore size of greater than 2 nm to 50 nm, and micropores having a pore size of 0.5 nm to 2 nm, wherein mesopores and micropores are formed on a frame surface of the silicon flakes, and macropores are through holes created inside of the silicon flakes frame. 2. The negative electrode material according to claim 1 , wherein the silicon flakes have an average pore diameter of 100 nm to 150 nm. 3. The negative electrode material according to claim 1 , wherein the silicon flakes have a porosity of 100 to 5000 based on a total volume. 4. The negative electrode material according to claim 1 , wherein the silicon flakes have a thickness of 20 to 100 nm. 5. The negative electrode material according to claim 1 , wherein the silicon flakes have a size of 200 nm to 50 μm. 6. The negative electrode material according to claim 1 , wherein the silicon flakes further include carbon coating. 7. The negative electrode material according to claim 6 , wherein the carbon coating has a thickness of 1 to 100 nm.

Assignees

Inventors

Classifications

  • Preparation (chemical coating from the vapour phase C23C16/00) · CPC title

  • extending in two dimensions, e.g. plate-like · CPC title

  • Pore diameter distribution · CPC title

  • Particles consisting of a mixture of two or more inorganic phases · CPC title

  • H01M4/386Primary

    Silicon or alloys based on silicon · CPC title

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What does patent US11302913B2 cover?
The present disclosure relates to a negative electrode material including, as an active material, silicon flakes with a hyperporous structure, represented by the following chemical formula 1:xSi.(1−x)A  (1)where 0.5≤x≤1.0, andA is an impurity, and includes at least one compound selected from the group consisting of Al2O3, MgO, SiO2, GeO2, Fe2O3, CaO, TiO2, Na2O K2O, CuO, ZnO, NiO, Zr2O3, Cr2O3 …
Who is the assignee on this patent?
Lg Chemical Ltd, Ulsan Nat Inst Science & Tech Unist
What technology area does this patent fall under?
Primary CPC classification H01M4/386. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 12 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).