Semiconductor photodetector assembly

Patent metadata

Field	Value
Publication number	US-11302835-B2
Application number	US-201916710801-A
Country	US
Kind code	B2
Filing date	Dec 11, 2019
Priority date	Jan 8, 2019
Publication date	Apr 12, 2022
Grant date	Apr 12, 2022

Abstract

Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and/or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.

First claim

The claimed invention is:

1. A dual UV/IR band semiconductor photodetector assembly configured to operate in response to light received at one or more input wavelengths, the assembly comprising:
a semiconductor absorber layer material configured to receive the light at the one or more input wavelengths and generate carriers via presence of an electric field, the semiconductor absorber layer material including multiple wide band gap semiconductor layers; and
a wide band gap semiconductor transducer layer material coupled to the absorber layer material, the transducer layer material having a first state and a second state, the transducer layer material having a discontinuous two-dimensional electron gas (2DEG) channel between two contacts in the first state, the transducer layer material configured to collect the carriers from the absorber layer material and form a continuous 2DEG channel between the two contacts in the second state in response to the absorber material receiving the light.

2. The assembly of claim 1 , wherein the one or more input wavelengths include one or both of infrared (IR) light and ultraviolet (UV) light.

3. The assembly of claim 2 , wherein the one or more input wavelengths include wavelengths of between about 250-360 nanometers and/or wavelengths of between about 1.3-14 micrometers.

4. The assembly of claim 1 , wherein a first one of the wide band gap semiconductor layers of the absorber layer material includes gallium nitride and a second one of the wide band gap semiconductor layers of the absorber layer material includes aluminum gallium nitride.

5. The assembly of claim 4 , wherein a third one of the wide band gap semiconductor layers of the absorber layer material includes gallium nitride.

6. The assembly of claim 5 , wherein at least one of the wide band gap semiconductor layers of the absorber layer material further includes indium.

7. The assembly of claim 1 , wherein the transducer layer material includes gallium nitride.

8. The assembly of claim 7 , wherein the transducer layer material further includes aluminum.

9. The assembly of claim 7 , wherein the transducer layer material is a first transducer layer material, the assembly further comprising:
a second transducer layer material coupled to the first transducer layer material, the second transducer layer material including gallium nitride; and
a substrate material coupled to the second transducer layer material.

10. The assembly of claim 1 , wherein the absorber layer material includes gallium arsenide and the transducer layer material does not include gallium arsenide.

11. The assembly of claim 1 , wherein transducer layer material is a first transducer layer material, the assembly further comprising:
a first contact material coupled to an interface between the first transducer layer material and the second transducer layer; and
a second contact material spaced apart from the first contact material, the second contact material coupled to the interface,
wherein the 2DEG channel includes a plurality of interdigitated 2DEG channels extending partially from one of the first contact material and the second contact material to the other of the first contact material and the second contact material.

12. The assembly of claim 1 , wherein the photodetector assembly includes a photodiode.

13. The assembly of claim 1 , wherein the photodetector assembly includes a phototransistor.

14. The assembly of claim 1 , further comprising a back barrier layer material coupled between the wide band gap semiconductor transducer layer material and a substrate layer.

15. The assembly of claim 14 , wherein the back barrier layer material includes aluminum nitride.

16. A method of forming a dual UV/IR band semiconductor photodetector assembly configured to receive light at one or more wavelengths, the method comprising:
coupling a wide band gap semiconductor transducer layer material to a substrate material, the transducer layer material having a first state and a second state, the transducer layer material having a discontinuous two-dimensional electron gas (2DEG) channel between two contacts in the first state; and
coupling a semiconductor absorber layer material to the wide band gap semiconductor transducer layer material, the semiconductor absorber layer material configured to receive the light at the one or more input wavelengths and generate electron-hole pairs, the semiconductor absorber layer material including multiple wide band gap semiconductor layers,
wherein the transducer layer material is configured to collect electrons from the semiconductor absorber layer material and form a continuous two-dimensional electron gas (2DEG) channel between the two contacts in response to the semiconductor absorber material receiving the light.

17. The method of claim 16 , wherein a first one of the wide band gap semiconductor layers of the absorber layer material includes gallium nitride and a second one of the wide band gap semiconductor layers of the absorber layer material includes aluminum gallium nitride.

18. The method of claim 17 , wherein a third one of the wide band gap semiconductor layers of the absorber layer material includes gallium nitride.

19. A dual/IR band semiconductor photodetector assembly configured to operate in response to light received at one or more input wavelengths, the assembly comprising:
means for receiving the light at the one or more input wavelengths and generate carriers via presence of an electric field, the means for receiving including multiple wide band gap semiconductor layers; and
means for collecting carriers from the means for receiving, the means for collecting coupled to the means for receiving, the means for collecting having a first state and a second state, the means for collecting having a discontinuous two-dimensional electron gas (2DEG) channel between two contacts in the first state, wherein the means for collecting is configured to form a continuous 2DEG channel between the two contacts in the second state in response to the means for receiving the light.

20. The assembly of claim 19 , wherein the photodetector assembly includes one or both of a photodiode and a phototransistor.

Assignees

• Analog Devices Inc

Inventors

• Azize Mohamed

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/206

  for devices having potential barriers · CPC title

• H10F77/14

  Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies · CPC title

• H10F71/1274

  comprising nitrides, e.g. InGaN or InGaAlN · CPC title

• H10F30/2843

  Schottky gate FETs, e.g. photo MESFETs · CPC title