Manufacturing method of micro-LED display panel

Patent metadata

Field	Value
Publication number	US-11302679-B2
Application number	US-202016990998-A
Country	US
Kind code	B2
Filing date	Aug 11, 2020
Priority date	Oct 31, 2017
Publication date	Apr 12, 2022
Grant date	Apr 12, 2022

Abstract

A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 μm to 30 μm.

First claim

What is claimed is:

1. A manufacturing method of a micro-LED display panel, comprising:
(A) providing a substrate with an anisotropic conductive film;
(B) transferring a plurality of micro-LEDs to a temporary carrier from different growth substrate with different color, wherein each of the micro-LEDs comprises an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layer comprises a first electrode and a second electrode, wherein a ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer is in a range of 0.1 to 0.5;
(C) repeating the step (B) to dispose a required number of the micro-LEDs on the temporary carrier; and
(D) processing by heating and pressuring to electrically bond the micro-LEDs from the temporary carrier to the substrate, wherein the step (D) is performed after every transferring process in the step (B),
wherein the anisotropic conductive film is disposed between the first electrode and the second electrode of each of the micro-LEDs, and the electrode layer is located between the substrate and the epitaxial layer.

2. The manufacturing method of the micro-LED display panel according to claim 1 , wherein in the step (B), the micro-LEDs are aligned with a plurality of pads of the substrate respectively.

3. The manufacturing method of the micro-LED display panel according to claim 2 , wherein the step (D) is performed after transferring all the micro-LEDs required for the substrate, and the bonding layer is formed between all the micro-LEDs and the corresponding pads of the substrate.

4. The manufacturing method of the micro-LED display panel according to claim 1 , wherein in the step (D), a bonding layer is formed between one of the micro-LEDs and one of the pads to electrically connect the one of the micro-LEDs and the substrate.

5. The manufacturing method of the micro-LED display panel according to claim 1 , wherein in the step (D), the first electrode and the second electrode of each micro-LED are embedded in the anisotropic conductive film.

Assignees

• Playnitride Inc

Inventors

• Liu Ying-Tsang
• Li Yu-Chu
• Chen Pei-Hsin
• Chen Yi-Ching

Classifications

• H10W90/732

  between stacked chips · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/07332

  Compression bonding, e.g. thermocompression bonding · CPC title

• H10W72/07307

  the auxiliary member being a temporary substrate, e.g. a removable substrate · CPC title

• H10W72/354

  comprising polymers · CPC title